-
公开(公告)号：US07598097B2
公开(公告)日：2009-10-06
申请号：US12114636
申请日：2008-05-02
IPC分类号： H01L21/00
CPC分类号： H01L29/82 , G11C11/14 , G11C19/02 , G11C19/0808 , G11C19/0841
摘要： A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. A trench is etched in the multi-layer stack structure. A selective etching process is used to corrugate the walls of trench. A seed layer is applied to the walls and bottom of the trench; the seed layer is covered with a magnetic layer. The trench is filled with an insulating material. A patterned layer is applied and portions of insulating material exposed by the pattern are removed, forming holes. Magnetic material and seed layer exposed in holes is selectively removed. The holes are filled with insulating material and connecting leads are attached to data tracks.
摘要翻译： 用于磁移位寄存器存储器系统的磁数据磁道可以通过形成交替的电介质层和/或硅层的多层叠层来制造。 在多层堆叠结构中蚀刻沟槽。 使用选择性蚀刻工艺来使沟槽的壁波纹化。 种子层施加到沟槽的壁和底部; 种子层被磁性层覆盖。 沟槽填充绝缘材料。 施加图案层，去除由图案露出的部分绝缘材料，形成孔。 选择性地除去暴露在孔中的磁性材料和种子层。 孔中填充绝缘材料，连接引线连接到数据轨道。
-
公开(公告)号：US07416905B2
公开(公告)日：2008-08-26
申请号：US11252384
申请日：2005-10-17
IPC分类号： H01L21/00
CPC分类号： H01L29/82 , G11C11/14 , G11C19/02 , G11C19/0808 , G11C19/0841
摘要： A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. A trench is etched in the multi-layer stack structure. A selective etching process is used to corrugate the walls of trench. A seed layer is applied to the walls and bottom of the trench; the seed layer is covered with a magnetic layer. The trench is filled with an insulating material. A patterned layer is applied and portions of insulating material exposed by the pattern are removed, forming holes. Magnetic material and seed layer exposed in holes is selectively removed. The holes are filled with insulating material and connecting leads are attached to data tracks.
摘要翻译： 用于磁移位寄存器存储器系统的磁数据磁道可以通过形成交替的电介质层和/或硅层的多层叠层来制造。 在多层堆叠结构中蚀刻沟槽。 使用选择性蚀刻工艺来使沟槽的壁波纹化。 种子层施加到沟槽的壁和底部; 种子层被磁性层覆盖。 沟槽填充绝缘材料。 施加图案层，去除由图案露出的部分绝缘材料，形成孔。 选择性地除去暴露在孔中的磁性材料和种子层。 孔中填充绝缘材料，连接引线连接到数据轨道。
-
3.发明授权Method of fabricating data tracks for use in a magnetic shift register memory device 失效制造用于磁移位寄存器存储器件的数据轨道的方法公开(公告)号：US06955926B2
公开(公告)日：2005-10-18
申请号：US10788190
申请日：2004-02-25
CPC分类号： G11C19/02 , G11C19/0841
摘要： A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. Vias of approximately 10 microns tall with a cross-section on the order of 100 nm×100 nm are etched in this multilayered stack of alternating layers. Vias may be etched form smooth or notched walls. Vias are filled by electroplating layers of alternating types of ferromagnetic or ferrimagnetic metals. The alternating ferromagnetic or ferrimagnetic layers are comprised of magnetic materials with different magnetization or magnetic exchange or magnetic anisotropies. These different magnetic characteristics allow the pinning of magnetic domain walls at the boundaries between these layers. Alternatively, vias are filled with a homogeneous ferromagnetic material. Magnetic domain walls are formed by the discontinuity in the ferromagnetic or ferromagnetic material that occurs at the notches or at the protuberances along the via walls.
摘要翻译： 用于磁移位寄存器存储器系统的磁数据磁道可以通过形成交替的电介质层和/或硅层的多层叠层来制造。 在该多层交替层中蚀刻约10微米高的具有100nm×100nm量级的横截面的通孔。 通孔可能被蚀刻形成平滑或缺口的墙壁。 通孔由交替类型的铁磁或亚铁磁性金属的电镀层填充。 交替的铁磁或亚铁磁层由具有不同磁化或磁交换或磁各向异性的磁性材料组成。 这些不同的磁特性允许磁畴壁在这些层之间的边界处的钉扎。 或者，通孔用均匀的铁磁材料填充。 磁畴壁由铁氧体或铁磁材料中的不连续部分形成，这些不规则发生在沿着通孔壁的凹口或凸起处。
-
公开(公告)号：US07108797B2
公开(公告)日：2006-09-19
申请号：US10787738
申请日：2004-02-25
CPC分类号： G11C11/14 , G11C19/02 , G11C19/0808 , G11C19/0841 , H01F10/14 , H01F10/265 , H01F41/26 , Y10T29/49021 , Y10T29/49043 , Y10T29/49052
摘要： A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. Vias of approximately 10 microns tall with a cross-section on the order of 100 nm×100 nm are etched in this multilayered stack of alternating layers. Vias may be etched form smooth or notched walls. Vias are filled by electroplating layers of alternating types of ferromagnetic or ferrimagnetic metals. The alternating ferromagnetic or ferrimagnetic layers are comprised of magnetic materials with different magnetization or magnetic exchange or magnetic anisotropies. These different magnetic characteristics allow the pinning of magnetic domain walls at the boundaries between these layers. Alternatively, vias are filled with a homogeneous ferromagnetic material. Magnetic domain walls are formed by the discontinuity in the ferromagnetic or ferromagnetic material that occurs at the notches or at the protuberances along the via walls.
摘要翻译： 用于磁移位寄存器存储器系统的磁数据磁道可以通过形成交替的电介质层和/或硅层的多层叠层来制造。 在该多层交替层中蚀刻约10微米高的具有100nm×100nm量级的横截面的通孔。 通孔可能被蚀刻形成平滑或缺口的墙壁。 通孔由交替类型的铁磁或亚铁磁性金属的电镀层填充。 交替的铁磁或亚铁磁层由具有不同磁化或磁交换或磁各向异性的磁性材料组成。 这些不同的磁特性允许磁畴壁在这些层之间的边界处的钉扎。 或者，通孔用均匀的铁磁材料填充。 磁畴壁由铁氧体或铁磁材料中的不连续部分形成，这些不规则发生在沿着通孔壁的凹口或凸起处。
-
公开(公告)号：US06538919B1
公开(公告)日：2003-03-25
申请号：US09708207
申请日：2000-11-08
IPC分类号： G11C1114
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/098 , H01F10/3281 , H01F10/3286
摘要： The use of ferrimagnetic materials is proposed for use in magnetic devices. Such magnetic devices include magnetic tunnel junctions (MTJ) which have at least two magnetic layers separated by an insulating barrier layer, wherein at least one of the two magnetic layers is ferrimagnetic. Such MTJ's are used in MRAM (magnetic random access memory) structures. Where the magnetic device is a magnetic sensor, it preferably includes a layer that comprises a ferrimagnetic material separated from another magnetic layer by a barrier layer and the magnetizations of the magnetic layer are oriented at an angle to one another.
摘要翻译： 提出使用铁磁材料用于磁性器件。 这种磁性装置包括具有由绝缘阻挡层隔开的至少两个磁性层的磁隧道结（MTJ），其中两个磁性层中的至少一个是亚铁磁性的。 这种MTJ用于MRAM（磁随机存取存储器）结构。 在磁性装置是磁性传感器的情况下，其优选地包括包含由阻挡层与另一个磁性层分离的铁磁材料的层，并且磁性层的磁化被定向成彼此成角度。
-
公开(公告)号：US5598308A
公开(公告)日：1997-01-28
申请号：US290324
申请日：1994-08-15
申请人： Bernard Dieny , Bruce A. Gurney , Stuart S. P. Parkin , Ian L. Sanders , Virgil S. Speriosu , Dennis R. Wilhoit
发明人： Bernard Dieny , Bruce A. Gurney , Stuart S. P. Parkin , Ian L. Sanders , Virgil S. Speriosu , Dennis R. Wilhoit
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B2005/3996
摘要： A magnetoresistive (MR) sensor comprising a layered structure having at least one trilayer comprising a first and a second thin film ferromagnetic layers separated by and in interfacial contact with a third thin film non-metallic magnetic layer. A fourth thin film layer of material is within the first ferromagnetic layer, and the fourth layer has a thickness between a fraction of a monolayer and several monolayers and is located at predetermined distance from the interface between the first and third layers. A current flow is produced through the MR sensor and variations in resistivity of the MR sensor produced by rotation of the magnetization in one or both of the ferromagnetic layers is sensed as a function of the magnetic field being sensed.
摘要翻译： 一种磁阻（MR）传感器，包括具有至少一个三层的层状结构，所述三层包括由第三薄膜非金属磁性层隔开并与其界面接触的第一和第二薄膜铁磁层。 第四薄膜层材料在第一铁磁层内，第四层的厚度介于单层的几分之一和几个单层之间，并且位于与第一和第三层之间的界面预定距离处。 通过MR传感器产生电流，并且感测由一个或两个铁磁层中的磁化的旋转而产生的MR传感器的电阻率的变化，作为被感测的磁场的函数。
-
公开(公告)号：US5014147A
公开(公告)日：1991-05-07
申请号：US429678
申请日：1989-10-31
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/399
摘要： An improved thin film magnetoresistive (MR) sensor uses an alloy comprising Fe.sub.(1-x) Mn.sub.x, where x is within the range of 0.3 to 0.4, as an antiferromagnetic layer to provide longitudinal exchange bias in the ferromagnetic MR layer. In a specific embodiment the exchange bias is at a high level and is independent of thickness of the antiferromagnetic layer over a wide range.
-
公开(公告)号：US20120008362A1
公开(公告)日：2012-01-12
申请号：US12833446
申请日：2010-07-09
CPC分类号： G11C19/0808 , G11C11/14 , G11C11/161 , G11C11/1675
摘要： A method for forming a memory device includes forming a cavity having an inner surface with an undulating profile in a substrate, depositing a ferromagnetic material in the cavity, forming a reading element on the substrate proximate to a portion of the ferromagnetic material, and forming a writing element on the substrate proximate to a second portion of the ferromagnetic material.
摘要翻译： 一种用于形成存储器件的方法包括：形成具有在衬底中具有波状轮廓的内表面的空腔，在所述空腔中沉积铁磁材料，在所述衬底上形成接近所述铁磁材料的一部分的读取元件，以及形成 在基板上的写入元件靠近铁磁材料的第二部分。
-
公开(公告)号：US06970379B2
公开(公告)日：2005-11-29
申请号：US10685835
申请日：2003-10-14
申请人： Stuart S. P. Parkin
发明人： Stuart S. P. Parkin
IPC分类号： G11C11/15 , G11C11/14 , G11C19/08 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C19/0808 , B82Y10/00 , G11C11/14
摘要： Digital information is stored in an unpatterned magnetic film, using the inherent, natural properties of the domain walls in ferromagnetic materials to write data on an unpatterned magnetic film. Data is read from the unpatterned magnetic film using magnetic tunneling junctions (MTJs). To achieve sufficient thermal stability, the magnetic fields required to change the orientation of these magnetic regions may be much larger than can be provided by currents passing through wires. This larger magnetic field is achieved by using the domain wall fringing field generated at the boundary between two magnetic domain walls. The magnetic regions are written by using the fringing fields from magnetic domain walls in neighboring magnetic wires. These wires are brought close to the magnetic storage layer where the magnetic storage regions are to be written.
-
公开(公告)号：US06898132B2
公开(公告)日：2005-05-24
申请号：US10458147
申请日：2003-06-10
申请人： Stuart S. P. Parkin
发明人： Stuart S. P. Parkin
CPC分类号： G11C19/0841 , G11C11/14 , G11C19/0808 , H01F10/14 , H01F41/26
摘要： A writing device can change the direction of the magnetic moment in a magnetic shift register, thus writing information to the domains or bits in the magnetic shift register. Associated with each domain wall are large magnetic fringing fields. The domain wall concentrates the change in magnetism from one direction to another in a very small space. Depending on the nature of the domain wall, very large dipolar fringing fields can emanate from the domain wall. This characteristic of magnetic domains is used to write to the magnetic shift register. When the domain wall is moved close to another magnetic material, the large fields of the domain wall change the direction of the magnetic moment in the magnetic material, effectively “writing” to the magnetic material.
摘要翻译： 写装置可以改变磁移位寄存器中磁矩的方向，从而将信息写入磁移位寄存器中的域或位。 与每个畴壁相关的是大磁场。 畴壁在非常小的空间中将磁性的变化从一个方向集中到另一个方向。 根据畴壁的性质，非常大的偶极边缘场可以从畴壁发出。 磁畴的这种特性用于写入磁性移位寄存器。 当畴壁移动靠近另一种磁性材料时，畴壁的大场改变磁性材料中磁矩的方向，有效地“写入”磁性材料。
-
-
-
-
-
-
-
-
-
搜索结果
30 条记录 (耗时 0.022 秒)
