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公开(公告)号：US5598308A
公开(公告)日：1997-01-28
申请号：US290324
申请日：1994-08-15
申请人： Bernard Dieny , Bruce A. Gurney , Stuart S. P. Parkin , Ian L. Sanders , Virgil S. Speriosu , Dennis R. Wilhoit
发明人： Bernard Dieny , Bruce A. Gurney , Stuart S. P. Parkin , Ian L. Sanders , Virgil S. Speriosu , Dennis R. Wilhoit
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B2005/3996
摘要： A magnetoresistive (MR) sensor comprising a layered structure having at least one trilayer comprising a first and a second thin film ferromagnetic layers separated by and in interfacial contact with a third thin film non-metallic magnetic layer. A fourth thin film layer of material is within the first ferromagnetic layer, and the fourth layer has a thickness between a fraction of a monolayer and several monolayers and is located at predetermined distance from the interface between the first and third layers. A current flow is produced through the MR sensor and variations in resistivity of the MR sensor produced by rotation of the magnetization in one or both of the ferromagnetic layers is sensed as a function of the magnetic field being sensed.
摘要翻译： 一种磁阻（MR）传感器，包括具有至少一个三层的层状结构，所述三层包括由第三薄膜非金属磁性层隔开并与其界面接触的第一和第二薄膜铁磁层。 第四薄膜层材料在第一铁磁层内，第四层的厚度介于单层的几分之一和几个单层之间，并且位于与第一和第三层之间的界面预定距离处。 通过MR传感器产生电流，并且感测由一个或两个铁磁层中的磁化的旋转而产生的MR传感器的电阻率的变化，作为被感测的磁场的函数。
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公开(公告)号：US5341261A
公开(公告)日：1994-08-23
申请号：US750157
申请日：1991-08-26
申请人： Bernard Dieny , Bruce A. Gurney , Stuart S. P. Parkin , Ian L. Sanders , Virgil S. Speriosu , Dennis R. Wilhoit
发明人： Bernard Dieny , Bruce A. Gurney , Stuart S. P. Parkin , Ian L. Sanders , Virgil S. Speriosu , Dennis R. Wilhoit
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B2005/3996
摘要： A magnetoresistive (MR) sensor comprising a layered structure having at least one trilayer comprising a first and a second thin film ferromagnetic layers separated by and in interfacial contact with a third thin film non-metallic layer. A fourth thin film layer of material is within the first ferromagnetic layer, and the fourth layer has a thickness between a fraction of a monolayer and several monolayer and is located at predetermined distance from the interface between the first and third layers. A current flow is produced through the MR sensor and variations in resistivity of the MR sensor produced by rotation of the magnetization in one or both of the ferromagnetic layers is sensed as a function of the magnetic field being sensed.
摘要翻译： 一种磁阻（MR）传感器，包括具有至少一个三层的层状结构，所述三层包括由第三薄膜非金属层隔开并与第三薄膜非金属层界面接触的第一和第二薄膜铁磁层。 第四薄膜层材料在第一铁磁层内，第四层具有单层的几分之一和几个单层之间的厚度，并且位于距离第一和第三层之间的界面的预定距离处。 通过MR传感器产生电流，并且感测由一个或两个铁磁层中的磁化的旋转而产生的MR传感器的电阻率的变化，作为被感测的磁场的函数。
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公开(公告)号：US5206590A
公开(公告)日：1993-04-27
申请号：US625343
申请日：1990-12-11
申请人： Bernard Dieny , Bruce A. Gurney , Steven E. Lambert , Daniele Mauri , Stuart S. P. Parkin , Virgil S. Speriosu , Dennis R. Wilhoit
发明人： Bernard Dieny , Bruce A. Gurney , Steven E. Lambert , Daniele Mauri , Stuart S. P. Parkin , Virgil S. Speriosu , Dennis R. Wilhoit
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B2005/0018 , G11B2005/3996
摘要： A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
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4.发明授权Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor 失效具有改进的铁磁感应层和使用该传感器的磁记录系统的磁阻传感器
公开(公告)号：US5408377A
公开(公告)日：1995-04-18
申请号：US138170
申请日：1993-10-15
申请人： Bruce A. Gurney , Haralambos Lefakis , Omar U. Need, III , Stuart S. P. Parkin , Virgil S. Speriosu , Dennis R. Wilhoit
发明人： Bruce A. Gurney , Haralambos Lefakis , Omar U. Need, III , Stuart S. P. Parkin , Virgil S. Speriosu , Dennis R. Wilhoit
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B5/3967 , H01F10/325 , G11B2005/3996 , H01F10/3295
摘要： A magnetic recording data storage system of high recording density is made possible by an improved magnetoresistive sensor. The sensor has a ferromagnetic sensing layer that is a laminated layer of two ferromagnetic films antiferromagnetically coupled to one another and separated by an antiferromagnetically coupling film. By appropriate selection of the thickness of the nonmagnetic antiferromagnetically coupling film, the ferromagnetic films become antiferromagnetically coupled and their magnetizations rotate as a single rigid unit in the presence of the external magnetic field to be sensed. The ferromagnetic sensing layer can be used in conventional magnetoresistive sensors of the anisotropic magnetoresistive (AMR) type and in spin valve magnetoresistive (SVMR) sensors. In the spin valve sensor, the laminated ferromagnetic sensing layer serves as the free layer and is preferably formed of two films of nickel-iron (Ni-Fe) separated by a ruthenium (Ru) antiferromagnetically coupling film. Because the two ferromagnetic films have their moments aligned antiparallel, then, assuming the two films are made of the same material, by selecting the two films to have different thicknesses the effective free layer thickness can be reduced without significantly reducing the magnetoresistance.
摘要翻译： 通过改进的磁阻传感器可以实现高记录密度的磁记录数据存储系统。 传感器具有铁磁感测层，其是两个铁磁膜的层叠层，它们彼此反铁磁耦合并由反铁磁耦合膜隔开。 通过适当选择非磁性反铁磁耦合膜的厚度，铁磁膜在存在待感测的外部磁场的情况下变为反铁磁耦合并且它们的磁化作为单个刚性单元旋转。 铁磁感应层可用于各向异性磁阻（AMR）型和自旋阀磁阻（SVMR）传感器的常规磁阻传感器。 在自旋阀传感器中，层叠铁磁感应层用作自由层，优选由两个由钌（Ru）反铁磁耦合膜分离的镍 - 铁（Ni-Fe）膜形成。 因为两个铁磁膜的力矩反平行取向，所以假设两个膜由相同的材料制成，通过选择两个膜以具有不同的厚度，可以减少有效的自由层厚度而不显着降低磁阻。
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公开(公告)号：US5159513A
公开(公告)日：1992-10-27
申请号：US652852
申请日：1991-02-08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01F10/3281 , H01L43/10 , G11B2005/3996
摘要： A magnetoresistive (MR) sensor comprising a layered structure formed on a substrate includes a first and a second thin film layer of magnetic material separated by a thin film layer of non-magnetic metallic material such as Cu, Au, or Ag, with at least one of the layers of ferromagnetic material formed of either cobalt or a cobalt alloy. The magnetization direction of the first ferromagnetic layer, at zero applied field, is set substantially perpendicular to the magnetization direction of the second ferromagnetic layer which is fixed in position. A current flow is produced through the sensor, and the variations in voltage across the MR sensor are sensed due to the changes in resistance produced by rotation of the magnetization in the front layer of ferromagnetic material as a function of the magnetic field being sensed.
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公开(公告)号：US5014147A
公开(公告)日：1991-05-07
申请号：US429678
申请日：1989-10-31
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/399
摘要： An improved thin film magnetoresistive (MR) sensor uses an alloy comprising Fe.sub.(1-x) Mn.sub.x, where x is within the range of 0.3 to 0.4, as an antiferromagnetic layer to provide longitudinal exchange bias in the ferromagnetic MR layer. In a specific embodiment the exchange bias is at a high level and is independent of thickness of the antiferromagnetic layer over a wide range.
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公开(公告)号：US07598097B2
公开(公告)日：2009-10-06
申请号：US12114636
申请日：2008-05-02
IPC分类号： H01L21/00
CPC分类号： H01L29/82 , G11C11/14 , G11C19/02 , G11C19/0808 , G11C19/0841
摘要： A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. A trench is etched in the multi-layer stack structure. A selective etching process is used to corrugate the walls of trench. A seed layer is applied to the walls and bottom of the trench; the seed layer is covered with a magnetic layer. The trench is filled with an insulating material. A patterned layer is applied and portions of insulating material exposed by the pattern are removed, forming holes. Magnetic material and seed layer exposed in holes is selectively removed. The holes are filled with insulating material and connecting leads are attached to data tracks.
摘要翻译： 用于磁移位寄存器存储器系统的磁数据磁道可以通过形成交替的电介质层和/或硅层的多层叠层来制造。 在多层堆叠结构中蚀刻沟槽。 使用选择性蚀刻工艺来使沟槽的壁波纹化。 种子层施加到沟槽的壁和底部; 种子层被磁性层覆盖。 沟槽填充绝缘材料。 施加图案层，去除由图案露出的部分绝缘材料，形成孔。 选择性地除去暴露在孔中的磁性材料和种子层。 孔中填充绝缘材料，连接引线连接到数据轨道。
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公开(公告)号：US07416905B2
公开(公告)日：2008-08-26
申请号：US11252384
申请日：2005-10-17
IPC分类号： H01L21/00
CPC分类号： H01L29/82 , G11C11/14 , G11C19/02 , G11C19/0808 , G11C19/0841
摘要： A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. A trench is etched in the multi-layer stack structure. A selective etching process is used to corrugate the walls of trench. A seed layer is applied to the walls and bottom of the trench; the seed layer is covered with a magnetic layer. The trench is filled with an insulating material. A patterned layer is applied and portions of insulating material exposed by the pattern are removed, forming holes. Magnetic material and seed layer exposed in holes is selectively removed. The holes are filled with insulating material and connecting leads are attached to data tracks.
摘要翻译： 用于磁移位寄存器存储器系统的磁数据磁道可以通过形成交替的电介质层和/或硅层的多层叠层来制造。 在多层堆叠结构中蚀刻沟槽。 使用选择性蚀刻工艺来使沟槽的壁波纹化。 种子层施加到沟槽的壁和底部; 种子层被磁性层覆盖。 沟槽填充绝缘材料。 施加图案层，去除由图案露出的部分绝缘材料，形成孔。 选择性地除去暴露在孔中的磁性材料和种子层。 孔中填充绝缘材料，连接引线连接到数据轨道。
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公开(公告)号：US06538919B1
公开(公告)日：2003-03-25
申请号：US09708207
申请日：2000-11-08
IPC分类号： G11C1114
CPC分类号： B82Y25/00 , G01R33/093 , G01R33/098 , H01F10/3281 , H01F10/3286
摘要： The use of ferrimagnetic materials is proposed for use in magnetic devices. Such magnetic devices include magnetic tunnel junctions (MTJ) which have at least two magnetic layers separated by an insulating barrier layer, wherein at least one of the two magnetic layers is ferrimagnetic. Such MTJ's are used in MRAM (magnetic random access memory) structures. Where the magnetic device is a magnetic sensor, it preferably includes a layer that comprises a ferrimagnetic material separated from another magnetic layer by a barrier layer and the magnetizations of the magnetic layer are oriented at an angle to one another.
摘要翻译： 提出使用铁磁材料用于磁性器件。 这种磁性装置包括具有由绝缘阻挡层隔开的至少两个磁性层的磁隧道结（MTJ），其中两个磁性层中的至少一个是亚铁磁性的。 这种MTJ用于MRAM（磁随机存取存储器）结构。 在磁性装置是磁性传感器的情况下，其优选地包括包含由阻挡层与另一个磁性层分离的铁磁材料的层，并且磁性层的磁化被定向成彼此成角度。
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公开(公告)号：US20120008362A1
公开(公告)日：2012-01-12
申请号：US12833446
申请日：2010-07-09
CPC分类号： G11C19/0808 , G11C11/14 , G11C11/161 , G11C11/1675
摘要： A method for forming a memory device includes forming a cavity having an inner surface with an undulating profile in a substrate, depositing a ferromagnetic material in the cavity, forming a reading element on the substrate proximate to a portion of the ferromagnetic material, and forming a writing element on the substrate proximate to a second portion of the ferromagnetic material.
摘要翻译： 一种用于形成存储器件的方法包括：形成具有在衬底中具有波状轮廓的内表面的空腔，在所述空腔中沉积铁磁材料，在所述衬底上形成接近所述铁磁材料的一部分的读取元件，以及形成 在基板上的写入元件靠近铁磁材料的第二部分。
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