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    Acene-thiophene copolymers
    2.
    发明授权
    Acene-thiophene copolymers 有权
    乙烯 - 噻吩共聚物

    公开(公告)号：US07608679B2

    公开(公告)日：2009-10-27

    申请号：US11278222

    申请日：2006-03-31

    申请人： Peiwang Zhu ,  Tzu-Chen Lee ,  Dennis E. Vogel ,  Christopher P. Gerlach

    发明人： Peiwang Zhu ,  Tzu-Chen Lee ,  Dennis E. Vogel ,  Christopher P. Gerlach

    IPC分类号： C08G75/00

    CPC分类号： H01L51/0043 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1424 ,  C08G2261/314 ,  C08G2261/3223 ,  H01L51/0037

    摘要： Acene-thiophene copolymers are provided that can be used as semiconductor materials in electronic devices. The acene-thiophene copolymers are of Formula I. In Formula I, Ac is a radical of an acene having 2 to 5 fused aromatic rings. The acene can be unsubstituted or substituted with a substituent selected from an alkyl, alkoxy, thioalkyl, aryl, aralkyl, halo, haloalkyl, hydroxyalkyl, heteroalkyl, alkenyl, or combinations thereof. Divalent group Q is selected from Formula III where each R1 and R2 group is independently selected from hydrogen, alkyl, alkoxy, thioalkyl, aryl, aralkyl, halo, haloalkyl, hydroxyalkyl, heteroalkyl, alkenyl, or combinations thereof. The subscript n in Formula I is an integer equal to at least 4. The asterisks in Formula I indicate the location of attachment to another group such as another repeat unit of formula —Ac-Q-.

    摘要翻译： 提供了可用作电子器件中的半导体材料的乙烯 - 噻吩共聚物。 乙烯 - 噻吩共聚物具有式I化合物。在式I中，Ac是具有2至5个稠合芳环的苊基团。 该烯可以是未取代的或被选自烷基，烷氧基，硫代烷基，芳基，芳烷基，卤代，卤代烷基，羟基烷基，杂烷基，烯基或其组合的取代基取代。 二价基团Q选自式III，其中每个R 1和R 2基团独立地选自氢，烷基，烷氧基，硫代烷基，芳基，芳烷基，卤素，卤代烷基，羟基烷基，杂烷基，烯基或其组合。 式I中的下标n是等于至少4的整数。式I中的星号表示连接到另一组的位置，例如式-Ac-Q-的另一个重复单元。

    Semiconductors containing perfluoroether acyl oligothiophene compounds
    7.
    发明授权
    Semiconductors containing perfluoroether acyl oligothiophene compounds 有权
    含全氟醚酰基低聚噻吩化合物的半导体

    公开(公告)号：US07151276B2

    公开(公告)日：2006-12-19

    申请号：US11075978

    申请日：2005-03-09

    申请人： Christopher P. Gerlach ,  David A. Ender ,  Dennis E. Vogel

    发明人： Christopher P. Gerlach ,  David A. Ender ,  Dennis E. Vogel

    IPC分类号： H01L35/24

    CPC分类号： H01L51/0068 ,  B82Y30/00 ,  H01L51/0036 ,  H01L51/0529 ,  H01L51/0545

    摘要： Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis(2-perfluoroether acyl oligothiophene compound.

    摘要翻译： 描述了半导体器件，其包括包含全氟醚酰基低聚噻吩化合物，优选α，ω-双 - 全氟醚酰基低聚噻吩化合物的半导体层。 此外，描述了制造半导体器件的方法，其包括沉积包含全氟醚酰基低聚噻吩化合物，优选α，ω-双（2-全氟醚酰基低聚噻吩化合物）的半导体层。

    Perfluoroether acyl oligothiophene compounds
    8.
    发明授权
    Perfluoroether acyl oligothiophene compounds 有权
    全氟醚酰基低聚噻吩化合物

    公开(公告)号：US07211679B2

    公开(公告)日：2007-05-01

    申请号：US11076268

    申请日：2005-03-09

    申请人： Christopher P. Gerlach ,  David A. Ender ,  Dennis E. Vogel

    发明人： Christopher P. Gerlach ,  David A. Ender ,  Dennis E. Vogel

    IPC分类号： H01B1/12 ,  C07D333/04 ,  C07D333/28

    CPC分类号： C07D333/28 ,  B82Y30/00 ,  C08G61/126 ,  H01L51/0036

    摘要： Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis(2-perfluoroether acyl oligothiophene compound.

    摘要翻译： 描述了半导体器件，其包括包含全氟醚酰基低聚噻吩化合物，优选α，ω-双 - 全氟醚酰基低聚噻吩化合物的半导体层。 此外，描述了制造半导体器件的方法，其包括沉积含有全氟醚酰基低聚噻吩化合物，优选α，ω-双（2-全氟醚酰基低聚噻吩化合物）的半导体层。

    Off-center deposition of organic semiconductor in an organic semiconductor device
    9.
    发明授权
    Off-center deposition of organic semiconductor in an organic semiconductor device 有权
    有机半导体在有机半导体器件中的偏心沉积

    公开(公告)号：US07948016B1

    公开(公告)日：2011-05-24

    申请号：US12611556

    申请日：2009-11-03

    申请人： Scott M. Schnobrich ,  Robert S. Clough ,  Dennis E. Vogel ,  Michael E. Griffin

    发明人： Scott M. Schnobrich ,  Robert S. Clough ,  Dennis E. Vogel ,  Michael E. Griffin

    IPC分类号： H01L29/76 ,  H01L23/58

    CPC分类号： H01L51/0005 ,  H01L51/0558

    摘要： The present disclosure provides a method of making a thin film semiconductor device such as a transistor comprising the steps of: a) providing a substrate bearing first and second conductive zones which define a channel therebetween, where the channel does not border more than 75% of the perimeter of either conductive zone; and b) depositing a discrete aliquot of a solution comprising an organic semiconductor adjacent to or on the channel, where a majority of the solution is deposited to one side of the channel and not on the channel. In some embodiments of the present disclosure, the solution is deposited entirely to one side of the channel, not on the channel, and furthermore the solution is deposited in a band having a length that is less than the channel length. The present disclosure additionally provides thin film semiconductor devices such as a transistors.

    摘要翻译： 本公开内容提供了制造诸如晶体管的薄膜半导体器件的方法，包括以下步骤：a）提供承载第一和第二导电区域的衬底，其在其间限定通道，其中通道不超过75％ 任一导电区的周长; 以及b）沉积包含邻近于或在通道上的有机半导体的溶液的离散等分试样，其中大部分溶液沉积在通道的一侧，而不是在通道上。 在本公开的一些实施例中，溶液完全沉积在通道的一侧，而不是在通道上，此外，溶液沉积在具有小于通道长度的长度的带中。 本公开另外提供诸如晶体管的薄膜半导体器件。