公开(公告)号：US10900927B2

公开(公告)日：2021-01-26

申请号：US16356019

申请日：2019-03-18

Applicant: UNIVERSITY OF SOUTH CAROLINA ,  CLEMSON UNIVERSITY

Inventor： Kenneth Walsh ,  Goutam Koley ,  Md. Sayful Islam ,  Hongmei Li

IPC: G01N27/414 ,  G01N27/333 ,  G01N27/30 ,  H01L29/16

Abstract: A graphene-based ion sensitive field effect transistor (GISFET) with high sensitivity and selectivity for ions is provided. For example, the GISFET of the present invention can exhibit high sensitivity and selectivity for K+ ions has been demonstrated utilizing a valinomycin-based ion selective membrane. The sensitivity of the GISFET can be at least about 50 millivolts/decade and can be stable for a time period of about two months, indicating the GISFET's reliability and effectiveness for physiological monitoring.

公开(公告)号：US10266397B2

公开(公告)日：2019-04-23

申请号：US14824269

申请日：2015-08-12

Applicant: University of South Carolina

Inventor： Goutam Koley ,  Abdul Talukdar

IPC: B01L3/00 ,  B81C1/00 ,  G01N21/17 ,  G01N29/02 ,  G01N29/24 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66 ,  G01N29/22 ,  H01L21/02

Abstract: A microcantilever based photoacoustic sensor is generally provided. In one embodiment, the microcantilever includes: a substrate; a GaN layer on the substrate, wherein the GaN layer defines a cantilever extending beyond an edge of the substrate, with a base area of the cantilever defined by the area spanning the edge of the substrate; a heterojunction field effect transistor (HFET) deflection transducer positioned on the cantilever; a pair of electrical contacts, each electrically connected to the HFET deflection transducer; and a microfluidic channel in fluid communication with an analyte reservoir, wherein the analyte reservoir is positioned at the base of the cantilever. A sensing system is also generally provided.

公开(公告)号：US20190293595A1

公开(公告)日：2019-09-26

申请号：US16356019

申请日：2019-03-18

Applicant: UNIVERSITY OF SOUTH CAROLINA ,  CLEMSON UNIVERSITY

Inventor： Kenneth Walsh ,  Goutam Koley ,  Md. Sayful Islam ,  Hongmei Li

IPC: G01N27/414 ,  H01L29/16 ,  G01N27/30 ,  G01N27/333

Abstract: A graphene-based ion sensitive field effect transistor (GISFET) with high sensitivity and selectivity for ions is provided. For example, the GISFET of the present invention can exhibit high sensitivity and selectivity for K+ ions has been demonstrated utilizing a valinomycin-based ion selective membrane. The sensitivity of the GISFET can be at least about 50 millivolts/decade and can be stable for a time period of about two months, indicating the GISFET's reliability and effectiveness for physiological monitoring.

公开(公告)号：US10899607B2

公开(公告)日：2021-01-26

申请号：US16245962

申请日：2019-01-11

Applicant: UNIVERSITY OF SOUTH CAROLINA

Inventor： Goutam Koley ,  Abdul Talukdar

IPC: B81C1/00 ,  H01L29/66 ,  G01N29/22 ,  H01L21/02 ,  H01L29/778 ,  G01N29/02 ,  G01N29/24 ,  G01N21/17 ,  B01L3/00 ,  H01L29/20

Abstract: The invention relates to a micro cantilever beam sensor and making method, including a chip, and its character: there is at least a group of sensor cells set on the chip, where the sensor cell is composed of the completely same four force-sensitive resistors composing a Wheatstone bridge and two cantilever beams, two of these resistors are on the substrate of the chip, the other two are on the two cantilever beams, respectively, one cantilever beam acts on a measuring cantilever beam and the other one acts on a reference cantilever beam, and the measuring cantilever beam is set with a sensitive layer on the surface. It can design and prepare in a liquid-flow micro-tank by front etching and silicon-glass bonding techniques, to directly detect liquid biomolecule. Whether applied to gas sensor or biosensor, it will play an important role in reducing device size, enhancing device sensitivity and realizing sensor multi-functionality. It has wide prospects for the fields of environment monitoring, clinic diagnosis and therapy, new drug development, food safety, industrial processing control, military and so on.

公开(公告)号：US10777410B2

公开(公告)日：2020-09-15

申请号：US15886911

申请日：2018-02-02

Applicant: University of South Carolina

Inventor： Ifat Jahangir ,  Goutam Koley ,  MVS Chandrashekhar

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/24 ,  H01L21/768 ,  H01L21/324 ,  H01L21/263 ,  H01L29/739 ,  H01L29/786 ,  H01L29/778 ,  H01L29/66

Abstract: Methods of synthesis and fabrication of a transition metal dichalcogenide (TMD) structures are disclosed. A method can include first patterning a transition metal (TM) on a substrate and placing the substrate in a process chamber. Oxygen can be applied to the transition metal on the substrate and a mixture of highly reactive transition metal oxides can be formed and simultaneously thinned down by sublimation. Finally, a chalcogen can be applied to the substrate and a transition metal dichalcogenide structure can be formed.

公开(公告)号：US20160109395A1

公开(公告)日：2016-04-21

申请号：US14887448

申请日：2015-10-20

Applicant: University of South Carolina

Inventor： Goutam Koley ,  Ifat Jahangir

IPC: G01N27/12

CPC classification number: G01N27/128 ,  G01N27/125

Abstract: Microcantilevers and systems incorporating the microcantilevers are described that can be utilized to perform selective detection of VOCs. The systems can detect VOCs at temperatures below the auto-ignition temperature of the VOCs and the microcantilevers need not be functionalized with any reactive groups particularly designed for the VOCs to be detected. The microcantilevers are triangular microcantilevers that can be formed of high bandgap semiconductors such as AlGaN/GaN heterojunction semiconductors.

Abstract translation: 描述了结合微悬臂梁的微悬臂梁和系统，其可用于执行VOC的选择性检测。 这些系统可以在低于VOC的自燃温度的温度下检测VOC，并且微悬臂不需要用特别为要检测的VOC而设计的任何反应基团进行功能​​化。 微悬臂梁是可以由诸如AlGaN / GaN异质结半导体的高带隙半导体形成的三角形微悬臂梁。

公开(公告)号：US10191004B2

公开(公告)日：2019-01-29

申请号：US14887448

申请日：2015-10-20

Applicant: University of South Carolina

Inventor： Goutam Koley ,  Ifat Jahangir

IPC: G01N27/12

Abstract: Microcantilevers and systems incorporating the microcantilevers are described that can be utilized to perform selective detection of VOCs. The systems can detect VOCs at temperatures below the auto-ignition temperature of the VOCs and the microcantilevers need not be functionalized with any reactive groups particularly designed for the VOCs to be detected. The microcantilevers are triangular microcantilevers that can be formed of high bandgap semiconductors such as AlGaN/GaN heterojunction semiconductors.

公开(公告)号：US20180226248A1

公开(公告)日：2018-08-09

申请号：US15886911

申请日：2018-02-02

Applicant: University of South Carolina

Inventor： Ifat Jahangir ,  Goutam Koley ,  MVS Chandrashekhar

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/24 ,  H01L21/324 ,  H01L21/263 ,  H01L21/768

Abstract: Methods of synthesis and fabrication of a transition metal dichalcogenide (TMD) structures are disclosed. A method can include first patterning a transition metal (TM) on a substrate and placing the substrate in a process chamber. Oxygen can be applied to the transition metal on the substrate and a mixture of highly reactive transition metal oxides can be formed and simultaneously thinned down by sublimation. Finally, a chalcogen can be applied to the substrate and a transition metal dichalcogenide structure can be formed.

公开(公告)号：US20160047781A1

公开(公告)日：2016-02-18

申请号：US14824269

申请日：2015-08-12

Applicant: University of South Carolina

Inventor： Goutam Koley

IPC: G01N29/24 ,  H01L29/66 ,  H01L29/20 ,  H01L29/778 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81C1/0015 ,  B01L3/5027 ,  B01L3/502707 ,  B01L2300/0663 ,  B01L2300/0877 ,  B01L2400/0484 ,  B81B2203/0118 ,  G01N21/1702 ,  G01N29/022 ,  G01N29/222 ,  G01N29/2425 ,  G01N2291/014 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7786

Abstract: A microcantilever based photoacoustic sensor is generally provided. In one embodiment, the microcantilever includes: a substrate; a GaN layer on the substrate, wherein the GaN layer defines a cantilever extending beyond an edge of the substrate, with a base area of the cantilever defined by the area spanning the edge of the substrate; a HFET deflection transducer positioned on the cantilever; a pair of electrical contacts, each electrically connected to the HFET deflection transducer; and a microfluidic channel in fluid communication with an analyte reservoir, wherein the analyte reservoir is positioned at the base of the cantilever. A sensing system is also generally provided.

Abstract translation: 通常提供基于微悬臂梁的光声传感器。 在一个实施例中，微悬臂梁包括：基底; 衬底上的GaN层，其中所述GaN层限定延伸超过所述衬底的边缘的悬臂，所述悬臂的基面由跨越所述衬底的边缘的区域限定; 位于悬臂上的HFET偏转传感器; 一对电触点，每一个电连接到HFET偏转换能器; 以及与分析物储存器流体连通的微流体通道，其中分析物储存器位于悬臂的底部。 还通常提供感测系统。