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    SYSTEM ON A CHIP WITH CUSTOMIZED DATA FLOW ARCHITECTURE
    1.
    发明申请
    SYSTEM ON A CHIP WITH CUSTOMIZED DATA FLOW ARCHITECTURE 有权

    公开(公告)号：US20210073153A1

    公开(公告)日：2021-03-11

    申请号：US16949535

    申请日：2020-11-02

    Applicant: University of Virginia Patent Foundation

    Inventor： Christopher J. Lukas ,  Benton H. Calhoun ,  Farah B. Yahya

    IPC: G06F13/36 ,  G06F1/3215 ,  G06F9/4401

    Abstract: A system-on-a-chip (SoC) comprises a power supply circuit coupled to an energy harvesting transducer and configured to operate using energy from the energy harvesting transducer; a microcontroller coupled to a system bus of the SoC; an interface configured to communicate with the microcontroller via the system bus of the SoC, the interface configured to generate data upon occurrence of an event; and a computation accelerator configured to establish, based on an energy consumption level of the SoC, a data path between the interface and the computation accelerator that at least partially bypasses the system bus such that the data is transmitted to the computation accelerator via the data path.

    LOW VOLTAGE CRYSTAL OSCILLATOR (XTAL) DRIVER WITH FEEDBACK CONTROLLED DUTY CYCLING FOR ULTRA LOW POWER
    4.
    发明申请
    LOW VOLTAGE CRYSTAL OSCILLATOR (XTAL) DRIVER WITH FEEDBACK CONTROLLED DUTY CYCLING FOR ULTRA LOW POWER 有权
    低电压晶体振荡器（XTAL）驱动器，具有反馈控制的超低功耗循环

    公开(公告)号：US20150214894A1

    公开(公告)日：2015-07-30

    申请号：US14594814

    申请日：2015-01-12

    Applicant: UNIVERSITY OF VIRGINIA PATENT FOUNDATION

    Inventor： Benton H. Calhoun ,  Aatmesh Shrivastava

    IPC: H03B5/36

    CPC classification number: H03B5/364 ,  H03B5/04 ,  H03B5/32 ,  H03B2200/0012 ,  H03B2200/0046 ,  H03B2200/0064 ,  H03B2200/0082 ,  H03L5/00

    Abstract: A low voltage crystal oscillator (XTAL) driver with feedback controlled duty cycling for ultra low power biases an amplifier for an XTAL in the sub-threshold operating regime. A feedback control scheme can be used to bias the amplifier for an XTAL biased in the sub-threshold operating regime. The amplifier of a XTAL oscillator can be duty cycled to save power, e.g., the XTAL driver can be turned off to save power when the amplitude of the XTAL oscillation reaches a maximum value in range; but be turned back on when the amplitude of the XTAL oscillation starts to decay, to maintain the oscillation before it stops. In addition or alternatively, a feedback control scheme to duty cycle the amplifier of a XTAL oscillator can be used to monitor the amplitude of the oscillation.

    Abstract translation: 具有反馈控制占空比的低电压晶体振荡器（XTAL）驱动器，用于超低功耗偏置用于子阈值操作状态下XTAL的放大器。 可以使用反馈控制方案来偏置放大器以在子阈值操作状态下偏置的XTAL。 XTAL振荡器的放大器可以循环使用以节省功率，例如，当XTAL振荡的幅度达到范围内的最大值时，可以关闭XTAL驱动器以节省功率; 但是当XTAL振荡的振幅开始衰减时，重新开启，以便在停止之前保持振荡。 另外或替代地，可以使用用于对XTAL振荡器的放大器进行占空比的反馈控制方案来监视振荡的幅度。

    Low power clock source
    6.
    发明授权
    Low power clock source 有权
    低功率时钟源

    公开(公告)号：US09590638B2

    公开(公告)日：2017-03-07

    申请号：US14426571

    申请日：2013-09-06

    Applicant: UNIVERSITY OF VIRGINIA PATENT FOUNDATION

    Inventor： Benton H. Calhoun ,  Aatmesh Shrivastava

    IPC: H03L1/02 ,  G06F1/04 ,  H03B5/32

    CPC classification number: H03L1/026 ,  G06F1/04 ,  G06F1/324 ,  G06F1/3287 ,  G06F1/3296 ,  H03B5/32 ,  H03K3/011 ,  H03K3/0315 ,  H03L1/02 ,  H03L1/021 ,  H03L1/022

    Abstract: An ultra-low power clock source includes a compensated oscillator and an uncompensated oscillator coupled by a comparator circuit. In an example, the compensated oscillator is more stable than the uncompensated oscillator with respect to changes in one or more of temperature, voltage, age, or other environmental parameters. The uncompensated oscillator includes a configuration input configured to adjust an operating characteristic of the uncompensated oscillator. In an example, the uncompensated oscillator is adjusted using information from the comparator circuit about a comparison of output signals from the compensated oscillator and the uncompensated oscillator.

    Abstract translation: 超低功率时钟源包括补偿振荡器和由比较器电路耦合的未补偿振荡器。 在一个示例中，相对于温度，电压，年龄或其他环境参数中的一个或多个的变化，补偿振荡器比未补偿的振荡器更稳定。 无补偿振荡器包括配置为调整未补偿振荡器的工作特性的配置输入。 在一个示例中，使用来自比较器电路的信息来调整来自补偿振荡器和未补偿振荡器的输出信号的比较的未补偿振荡器。

    Low input voltage boost converter with peak inductor current control and offset compensated zero detection
    7.
    发明授权
    Low input voltage boost converter with peak inductor current control and offset compensated zero detection 有权
    低输入电压升压转换器，具有峰值电感电流控制和偏移补偿零检测

    公开(公告)号：US09325240B2

    公开(公告)日：2016-04-26

    申请号：US14600425

    申请日：2015-01-20

    Applicant: UNIVERSITY OF VIRGINIA PATENT FOUNDATION

    Inventor： Benton H. Calhoun ,  Aatmesh Shrivastava

    IPC: G05F1/56 ,  H02M3/158 ,  G05F1/565 ,  G05F1/46 ,  H02M1/00

    CPC classification number: H02M3/158 ,  G05F1/462 ,  G05F1/565 ,  H02M1/088 ,  H02M3/156 ,  H02M2001/0025

    Abstract: The low input voltage boost converter with peak inductor current control and offset compensated zero detection provide a boost converter scheme to harvest energy from sources with small output voltages. Some embodiments described herein includes a thermoelectric boost converter that combines an IPEAK control scheme with offset compensation and duty cycled comparators to enable energy harvesting from TEG inputs as low as 5 mV to 10 mV, and the peak inductor current is independent to first order of the input voltage and output voltage. A control circuit can be configured to sample the input voltage (VIN) and then generate a pulse with a duration inversely proportional to VIN so as to control the boost converter switches such that a substantially constant peak inductor current is generated.

    Abstract translation: 具有峰值电感电流控制和偏移补偿零检测的低输入电压升压转换器提供了一种升压转换器方案，用于从具有小输出电压的电源收集能量。 本文描述的一些实施例包括将IPEAK控制方案与偏移补偿和负载循环比较器组合的热电升压转换器，以使能够从低至5mV至10mV的TEG输入能量收集，并且峰值电感器电流独立于 输入电压和输出电压。 控制电路可以被配置为对输入电压（VIN）进行采样，然后产生具有与VIN成反比的持续时间的脉冲，以便控制升压转换器开关，使得产生基本恒定的峰值电感电流。

    MEMORY CELL
    8.
    发明申请
    MEMORY CELL 审中-公开
    记忆体

    公开(公告)号：US20150147857A1

    公开(公告)日：2015-05-28

    申请号：US14611732

    申请日：2015-02-02

    Applicant: University of Virginia Patent Foundation

    Inventor： Benton H. Calhoun ,  Randy W. Mann

    IPC: H01L27/11 ,  H01L21/28 ,  H01L21/768

    CPC classification number: H01L27/1104 ,  G11C11/412 ,  H01L21/28035 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/768 ,  Y10S257/903

    Abstract: Memory cells are described with cross-coupled inverters including unidirectional gate conductors. Gate conductors for access transistors may also be aligned with a long axis of the inverter gate conductor. Contacts of one inverter in a cross-coupled pair may be aligned with a long axis of the other inverter's gate conductor. Separately formed rectangular active regions may be orthogonal to the gate conductors across pull up, pull down and access transistors. Separate active regions may be formed such that active regions associated with an access transistor and/or a pull up transistor are noncontiguous with, and narrower than, an active region associated with a pull down transistor of the inverter. The major components of 6T SRAM, and similar, memory cell topologies may be formed essentially from an array of rectangular lines, including unidirectional, gate conductors and contacts, and unidirectional rectangular active regions crossing gate conductors of the inverters and access transistors.

    Abstract translation: 使用包括单向栅极导体的交叉耦合反相器来描述存储器单元。 用于存取晶体管的栅极导体也可以与逆变器栅极导体的长轴对准。 交叉耦合对中的一个逆变器的触点可以与另一个逆变器的栅极导体的长轴对准。 单独形成的矩形有源区域可以跨越上拉，下拉和存取晶体管与栅极导体正交。 可以形成单独的有源区域，使得与存取晶体管和/或上拉晶体管相关联的有源区域与与反相器的下拉晶体管相关联的有源区域不连续并且窄于与下拉晶体管的下拉晶体管相关联的有源区域。 6T SRAM和类似的存储单元拓扑的主要部件可以基本上由矩形线阵列形成，包括单向，栅极导体和触点，以及与逆变器和存取晶体管交叉的栅极导体的单向矩形有源区。

    ENERGY HARVESTING AND CONTROL FOR SENSOR NODE
    9.
    发明申请
    ENERGY HARVESTING AND CONTROL FOR SENSOR NODE 有权
    传感器节能的能量采集和控制

    公开(公告)号：US20150035378A1

    公开(公告)日：2015-02-05

    申请号：US14379449

    申请日：2013-02-15

    Applicant: UNIVERSITY OF VIRGINIA PATENT FOUNDATION ,  UNIVERSITY OF WASHINGTON THROUGH ITS CENTER FOR COMMERCIALIZATION

    Inventor： Benton H. Calhoun ,  Brian Otis

    IPC: H02J17/00

    CPC classification number: H02J50/12 ,  A61B5/04004 ,  A61B5/0402 ,  A61B5/0476 ,  A61B5/0488 ,  A61B2560/0214 ,  A61B2560/0219 ,  A61N1/3785 ,  A61N1/3787 ,  G05F1/613 ,  G06F1/3287 ,  H02J17/00 ,  H02J50/00 ,  Y02D10/171

    Abstract: An integrated circuit, such as included as a portion of a sensor node, can include a regulator circuit having an input coupleable to an energy harvesting transducer. The integrated circuit can include a wireless receiver circuit coupled to the regulator circuit and configured to wirelessly receive at least enough operating energy to establish operation of the sensor node without requiring the energy harvesting transducer. The integrated circuit can include a digital processor circuit coupled to the regulator circuit and a power management processor circuit. The digital processor circuit or one or more other circuits can include a subthreshold operational mode established by the power management processor circuit based on the selected energy consumption level. For example, establishing the subthreshold operational mode can include adjusting or selecting a supply voltage so as to establish subthreshold operation of a field effect transistor (FET) in the digital processor circuit or other circuits.

    Abstract translation: 诸如被包括为传感器节点的一部分的集成电路可以包括具有可耦合到能量收集传感器的输入的调节器电路。 集成电路可以包括耦合到调节器电路并被配置为无线地接收至少足够的操作能量以建立传感器节点的操作而不需要能量收集传感器的无线接收器电路。 集成电路可以包括耦合到调节器电路的数字处理器电路和电源管理处理器电路。 数字处理器电路或一个或多个其它电路可以包括由电源管理处理器电路基于所选择的能量消耗水平建立的亚阈值操作模式。 例如，建立亚阈值操作模式可以包括调整或选择供电电压，以便在数字处理器电路或其它电路中建立场效应晶体管（FET）的亚阈值操作。

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