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    Memory cell configuration and corresponding production process
    1.
    发明授权
    Memory cell configuration and corresponding production process 失效
    内存单元配置及相应的生产流程

    公开(公告)号：US06472696B1

    公开(公告)日：2002-10-29

    申请号：US09645763

    申请日：2000-08-25

    申请人： Ulrich Zimmermann ,  Thomas Böhm ,  Manfred Hain ,  Armin Kohlhase ,  Yoichi Otani ,  Andreas Rusch ,  Alexander Trüby

    发明人： Ulrich Zimmermann ,  Thomas Böhm ,  Manfred Hain ,  Armin Kohlhase ,  Yoichi Otani ,  Andreas Rusch ,  Alexander Trüby

    IPC分类号： H01L2710

    CPC分类号： H01L27/11273 ,  H01L27/112

    摘要： The memory cell configuration has a large number of memory cells provided in a semiconductor substrate and having bit-line trenches which extend in parallel in the longitudinal direction in the main face of the semiconductor substrate, at the bottoms of which in each case a first conductive region is provided, at the peaks of which in each case a second conductive region of the same conduction type as the first conductive region is provided, and in the walls of which in each case an intermediately located channel region is 0 provided; and having word lines which extend in the transverse direction along the main face of the semiconductor substrate, through specific bit-line trenches, to activate transistors provided there. An additional dopant is introduced into the trench walls of the bit-line trenches which are located between the word lines, in order to increase the corresponding transistor turn-on voltage there to suppress leakage currents.

    摘要翻译： 存储单元配置具有设置在半导体衬底中的大量存储单元，并且具有在半导体衬底的主面中在纵向方向上平行延伸的位线沟槽，其底部在每种情况下都具有第一导电 区域被提供，其峰值在每种情况下具有与第一导电区域相同的导电类型的第二导电区域，并且在其每一种情况下壁的中间位置的沟道区域为0; 并且具有通过特定位线沟槽沿着半导体衬底的主面在横向上延伸的字线，以激活在其中设置的晶体管。 另外的掺杂剂被引入位于字线之间的位线沟槽的沟槽壁中，以便在其上增加对应的晶体管导通电压以抑制漏电流。

    Memory cell configuration and corresponding fabrication method
    2.
    发明授权
    Memory cell configuration and corresponding fabrication method 有权
    存储单元配置及相应的制造方法

    公开(公告)号：US06258658B1

    公开(公告)日：2001-07-10

    申请号：US09250362

    申请日：1999-02-12

    申请人： Thomas Böhm ,  Volker Weinrich ,  Manfred Hain ,  Armin Kohlhase ,  Yoichi Otani ,  Andreas Rusch ,  Till Schlösser

    发明人： Thomas Böhm ,  Volker Weinrich ,  Manfred Hain ,  Armin Kohlhase ,  Yoichi Otani ,  Andreas Rusch ,  Till Schlösser

    IPC分类号： H01L218242

    CPC分类号： H01L27/10823 ,  H01L27/10808

    摘要： The memory cell configuration has a multiplicity of preferably ferroelectric memory cells in a semiconductor substrate. Mutually parallel bit line trenches run in the longitudinal direction in the main surface of the semiconductor substrate. Bit lines are disposed in the bottoms of the trenches. Source/drain regions are formed in the crowns of the trenches. Channel regions are provided in the walls of the trenches. The channel region on a wall in each case is configured such that a drivable selection transistor of the relevant memory cell is formed there, while the channel region on the other wall is configured such that the transistor located there is closed. Insulated word lines for driving the selection transistors run in the transverse direction along the main surface of the semiconductor substrate through the bit line trenches. Insulation trenches for insulating the source/drain regions in the longitudinal direction of neighboring memory cells run in the transverse direction in the main surface of the semiconductor substrate. A respective, preferably ferroelectric, capacitor is connected to the source/drain region of the respective memory cell and is arranged above the word lines.

    摘要翻译： 存储单元配置在半导体衬底中具有多个优选铁电存储单元。 相互并行的位线沟槽在半导体衬底的主表面中沿纵向延伸。 位线设置在沟槽的底部。 源极/漏极区域形成在沟槽的冠部中。 通道区域设置在沟槽的壁中。 在每种情况下，壁上的沟道区域被构造成使得相关存储单元的可驱动选择晶体管形成在其中，而另一壁上的沟道区域被配置为使得位于那里的晶体管闭合。 用于驱动选择晶体管的绝缘字线通过位线沟槽沿着半导体衬底的主表面在横向方向上延伸。 用于绝缘沟槽，用于使相邻存储单元的纵向上的源极/漏极区域绝缘，在半导体衬底的主表面中沿横向延伸。 相应的优选铁电电容器连接到相应存储单元的源极/漏极区域并且被布置在字线之上。

    Integrated memory having a differential sense amplifier
    6.
    发明授权
    Integrated memory having a differential sense amplifier 有权
    具有差分读出放大器的集成存储器

    公开(公告)号：US06351422B2

    公开(公告)日：2002-02-26

    申请号：US09820235

    申请日：2001-03-28

    申请人： Thomas Röhr ,  Thomas Böhm ,  Heinz Hönigschmid ,  Georg Braun

    发明人： Thomas Röhr ,  Thomas Böhm ,  Heinz Hönigschmid ,  Georg Braun

    IPC分类号： G11C700

    CPC分类号： G11C11/22 ,  G11C7/12 ,  G11C7/22

    摘要： The memory has writable memory cells. In addition, it has a bit line pair which connects the memory cells MC to a differential sense amplifier. A control unit is used for precharging the bit lines in a plurality of steps before one of the memory cells is conductively connected to one of the bit lines for a read access operation. For a write access operation, the control unit carries out no more than some of the bit line precharging steps provided for a read access operation before the sense amplifier transfers data to the bit line pair.

    摘要翻译： 内存有可写存储单元。 此外，它具有将存储单元MC连接到差分读出放大器的位线对。 控制单元用于在存储器单元之一导通地连接到用于读访问操作的位线之一之前的多个步骤中对位线进行预充电。 对于写访问操作，在读出放大器将数据传送到位线对之前，控制单元执行不超过为读访问操作提供的一些位线预充电步骤。

    DEVICE FOR THE MANUFACTURE OF ABSORBENT PRODUCTS
    7.
    发明申请
    DEVICE FOR THE MANUFACTURE OF ABSORBENT PRODUCTS 失效
    吸收产品的制造设备

    公开(公告)号：US20090272240A1

    公开(公告)日：2009-11-05

    申请号：US12306101

    申请日：2006-06-30

    申请人： Thomas Böhm ,  Daniel Carlsson

    发明人： Thomas Böhm ,  Daniel Carlsson

    IPC分类号： B26F1/20 ,  B26D3/12

    CPC分类号： B26F1/20 ,  B26D1/0006 ,  B26D3/10 ,  B26D3/12 ,  B26D2001/0053 ,  B26D2001/006 ,  B26F1/22 ,  B26F1/44 ,  B26F2001/4409 ,  B26F2001/4481 ,  Y10T83/4836 ,  Y10T83/4838 ,  Y10T83/9314 ,  Y10T156/12

    摘要： A device for the manufacture of an absorbent product including a rotatable slitting tool having an extent in a radial direction and an extent in an axial direction perpendicular to the radial direction, the slitting tool being divided in the axial direction into two lateral parts and lying between them a central part. The central part has a circular cross section in the radial direction, and the lateral parts include, in the axial direction, intermittent protuberances projecting from the central part. The protuberances are the same distance from the center of the slitting tool as the circular cross section. The central part between the protuberances, in the direction of curvature of the envelope surface, forms a plurality of cutting edges, each of which has a width which, at a given pressure, permits slitting of a layer of material intended for the absorbent product, and the protuberances form supporting surfaces between the cutting edges.

    摘要翻译： 一种用于制造吸收产品的装置，包括具有与径向方向垂直的径向方向和程度的可旋转切割工具，该切割工具沿轴向方向分成两个侧面部分，位于 他们是中心部分。 中心部分在径向上具有圆形横截面，并且侧向部分在轴向方向上包括从中心部分突出的间歇突起。 突起与切割工具的中心距圆形截面相同。 突起之间的中心部分在包络表面的曲率方向上形成多个切割边缘，每个切割边缘具有宽度，该宽度在给定压力下允许切割用于吸收产品的一层材料， 并且突起在切割刃之间形成支撑表面。

    Leak indicator with test leak and test leak for integration into a leak detector
    8.
    发明授权
    Leak indicator with test leak and test leak for integration into a leak detector 有权
    泄漏指示器，带有测试泄漏和测试泄漏，用于集成到检漏仪中

    公开(公告)号：US07444854B2

    公开(公告)日：2008-11-04

    申请号：US11504831

    申请日：2006-08-16

    申请人： Thomas Böhm ,  Werner Grosse Bley ,  Randolf Rolff ,  Sandra Seitz ,  Norbert Rolff

    发明人： Thomas Böhm ,  Werner Grosse Bley ,  Randolf Rolff ,  Sandra Seitz ,  Norbert Rolff

    IPC分类号： G01M3/20

    CPC分类号： G01M3/207

    摘要： A leak test apparatus includes a housing having an interior sized for retaining a plurality of instrument components including a control unit. A sniffer gun is linked to the instrument components, the sniffer gun having an intake point, and a test leak includes a gas reservoir, a constriction, an opening suited for introducing the intake point of said sniffer gun, and a temperature sensor. The temperature sensor is linked, either by means of a wired connection or wirelessly to the control unit for signal transfer.

    摘要翻译： 泄漏测试装置包括壳体，其具有尺寸适于保持包括控制单元的多个仪器部件的内部。 嗅探枪连接到仪器部件，嗅探枪具有进气点，并且测试泄漏包括气体储存器，收缩部，适于引入嗅探枪的进气口的开口和温度传感器。 温度传感器通过有线连接或无线连接到控制单元进行信号传输。