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    Segmented data storage
    1.
    发明授权
    Segmented data storage 有权
    分段数据存储

    公开(公告)号：US08949684B1

    公开(公告)日：2015-02-03

    申请号：US12551583

    申请日：2009-09-01

    Applicant: Ofir Shalvi ,  Barak Rotbard ,  Oren Golov ,  Micha Anholt ,  Uri Perlmutter

    Inventor： Ofir Shalvi ,  Barak Rotbard ,  Oren Golov ,  Micha Anholt ,  Uri Perlmutter

    IPC: G11C29/00 ,  G11C29/04

    CPC classification number: G11C16/3404 ,  G06F11/1012 ,  G06F11/1072 ,  G11C5/005 ,  G11C16/00 ,  G11C2029/0411 ,  G11C2029/4402

    Abstract: A method for data storage includes assigning in a memory that includes one or more storage devices a first storage area for storage of user data, and a second storage area, which is separate from the first storage area, for storage of redundancy information related to the user data. Input data is processed to produce redundancy data, and the input data is stored in the first storage area using at least one first write command. The redundancy data is stored in the second storage area using at least one second write command, separate from the first write command.

    Abstract translation: 一种用于数据存储的方法包括在包括一个或多个存储设备的存储器中分配用于存储用户数据的第一存储区域和与第一存储区域分开的第二存储区域，用于存储与第一存储区域相关的冗余信息 用户数据。 处理输入数据以产生冗余数据，并且使用至少一个第一写入命令将输入​​数据存储在第一存储区域中。 冗余数据使用与第一写入命令分开的至少一个第二写入命令存储在第二存储区域中。

    Reducing distortion using joint storage
    3.
    发明授权
    Reducing distortion using joint storage 有权
    使用联合储存减少失真

    公开(公告)号：US08300478B2

    公开(公告)日：2012-10-30

    申请号：US13412780

    申请日：2012-03-06

    Applicant: Ofir Shalvi ,  Eyal Gurgi ,  Uri Perlmutter ,  Oren Golov

    Inventor： Ofir Shalvi ,  Eyal Gurgi ,  Uri Perlmutter ,  Oren Golov

    IPC: G11C7/10

    CPC classification number: G11C11/5628 ,  G11C16/10 ,  G11C16/3418

    Abstract: A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order.

    Abstract translation: 一种用于数据存储的方法包括预先定义以行排列的多个模拟存储器单元的编程顺序。 该顺序指定对于在第一和第二侧具有相邻行的给定行，只有当至少一个侧面上的相邻行中的存储器单元处于擦除状态时，给定行中的存储器单元被编程，并且该 给定行中的存储器单元被编程为假设最高编程电平，其对应于单元的编程电平中的最大模拟值，只有在编程给定行中的所有存储器单元之后才采用除 最高水平。 根据预定义的顺序对存储器单元进行编程，将数据存储在存储器单元中。

    Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
    4.
    发明授权
    Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N 有权
    在N位/单元模拟存储单元器件中以M位/单元密度存储，M> N

    公开(公告)号：US08208304B2

    公开(公告)日：2012-06-26

    申请号：US12618732

    申请日：2009-11-15

    Applicant: Ofir Shalvi ,  Naftali Sommer ,  Uri Perlmutter ,  Dotan Sokolov

    Inventor： Ofir Shalvi ,  Naftali Sommer ,  Uri Perlmutter ,  Dotan Sokolov

    IPC: G11C16/04

    CPC classification number: G06F11/1068 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/26 ,  G11C27/005 ,  G11C2211/5641

    Abstract: A method for data storage includes accepting data for storage in a memory that includes multiple analog memory cells and supports a set of built-in programming commands. Each of the programming commands programs a respective page, selected from a group of N pages, in a subset of the memory cells. The subset of the memory cells is programmed to store M pages of the data, M>N, by performing a sequence of the programming commands drawn only from the set.

    Abstract translation: 一种用于数据存储的方法包括接收用于存储在包括多个模拟存储器单元的存储器中的数据，并且支持一组内置的编程命令。 每个编程命令在存储器单元的子集中编写从一组N页中选择的相应页面。 存储器单元的子集被编程为通过执行仅从集合中绘制的编程命令的序列来存储数据的M页M> N。

    PROGRAMMING ORDERS FOR REDUCING DISTORTION IN ARRAYS OF MULTI-LEVEL ANALOG MEMORY CELLS
    5.
    发明申请
    PROGRAMMING ORDERS FOR REDUCING DISTORTION IN ARRAYS OF MULTI-LEVEL ANALOG MEMORY CELLS 有权
    用于减少多级模拟记忆细胞阵列失真的编程方式

    公开(公告)号：US20100157675A1

    公开(公告)日：2010-06-24

    申请号：US12721585

    申请日：2010-03-11

    Applicant: Ofir Shalvi ,  Eyal Gurgi ,  Uri Perlmutter ,  Oren Golov

    Inventor： Ofir Shalvi ,  Eyal Gurgi ,  Uri Perlmutter ,  Oren Golov

    IPC: G11C16/04

    CPC classification number: G11C16/3418 ,  G11C11/56 ,  G11C16/04 ,  G11C27/005 ,  G11C2211/5641

    Abstract: A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order.

    Abstract translation: 一种用于数据存储的方法包括预先定义以行排列的多个模拟存储器单元的编程顺序。 该顺序指定对于在第一和第二侧具有相邻行的给定行，只有当至少一个侧面上的相邻行中的存储器单元处于擦除状态时，给定行中的存储器单元被编程，并且该 给定行中的存储器单元被编程为假设最高编程电平，其对应于单元的编程电平中的最大模拟值，只有在编程给定行中的所有存储器单元之后才采用除 最高水平。 根据预定义的顺序对存储器单元进行编程，将数据存储在存储器单元中。

    EFFICIENT RE-READ OPERATIONS IN ANALOG MEMORY CELL ARRAYS
    7.
    发明申请
    EFFICIENT RE-READ OPERATIONS IN ANALOG MEMORY CELL ARRAYS 有权

    公开(公告)号：US20120272122A1

    公开(公告)日：2012-10-25

    申请号：US13523421

    申请日：2012-06-14

    Applicant: Uri Perlmutter ,  Naftali Sommer ,  Ofir Shalvi

    Inventor： Uri Perlmutter ,  Naftali Sommer ,  Ofir Shalvi

    IPC: H03M13/05 ,  G06F11/10

    CPC classification number: G06F11/10 ,  G06F11/1008 ,  G06F11/1068 ,  G11C2029/0411 ,  H03M13/00 ,  H03M13/3761

    Abstract: A method for data storage includes storing data, which is encoded with an Error Correction Code (ECC), in a group of analog memory cells by writing respective first storage values to the memory cells in the group. After storing the data, respective second storage values are read from the memory cells in the group, and the read second storage values are processed so as to decode the ECC. Responsively to a failure in decoding the ECC, one or more of the second storage values that potentially caused the failure are identified as suspect storage values. Respective third storage values are re-read from a subset of the memory cells that includes the memory cells holding the suspect storage values. The ECC is re-decoded using the third storage values so as to reconstruct the stored data.

    Programming orders for reducing distortion in arrays of multi-level analog memory cells
    8.
    发明授权
    Programming orders for reducing distortion in arrays of multi-level analog memory cells 有权
    用于减少多级模拟存储器单元阵列中的失真的编程命令

    公开(公告)号：US08174905B2

    公开(公告)日：2012-05-08

    申请号：US12721585

    申请日：2010-03-11

    Applicant: Ofir Shalvi ,  Eyal Gurgi ,  Uri Perlmutter ,  Oren Golov

    Inventor： Ofir Shalvi ,  Eyal Gurgi ,  Uri Perlmutter ,  Oren Golov

    IPC: G11C11/34

    CPC classification number: G11C16/3418 ,  G11C11/56 ,  G11C16/04 ,  G11C27/005 ,  G11C2211/5641

    Abstract: A method for data storage includes predefining an order of programming a plurality of analog memory cells that are arranged in rows. The order specifies that for a given row having neighboring rows on first and second sides, the memory cells in the given row are programmed only while the memory cells in the neighboring rows on at least one of the sides are in an erased state, and that the memory cells in the given row are programmed to assume a highest programming level, which corresponds to a largest analog value among the programming levels of the cells, only after programming all the memory cells in the given row to assume the programming levels other than the highest level. Data is stored in the memory cells by programming the memory cells in accordance with the predefined order.

    Abstract translation: 一种用于数据存储的方法包括预先定义以行排列的多个模拟存储器单元的编程顺序。 该顺序指定对于在第一和第二侧具有相邻行的给定行，只有在至少一个侧面上的相邻行中的存储器单元处于擦除状态时，给定行中的存储器单元被编程，并且该 给定行中的存储器单元被编程为假设最高编程电平，其对应于单元的编程电平中的最大模拟值，只有在编程给定行中的所有存储器单元之后才采用除 最高水平。 根据预定义的顺序对存储器单元进行编程，将数据存储在存储器单元中。

    Programming of analog memory cells using a single programming pulse per state transition
    10.
    发明授权
    Programming of analog memory cells using a single programming pulse per state transition 有权
    使用每个状态转换的单个编程脉冲对模拟存储器单元进行编程

    公开(公告)号：US07924587B2

    公开(公告)日：2011-04-12

    申请号：US12388528

    申请日：2009-02-19

    Applicant: Uri Perlmutter ,  Shai Winter ,  Ofir Shalvi ,  Eyal Gurgi ,  Naftali Sommer ,  Oren Golov

    Inventor： Uri Perlmutter ,  Shai Winter ,  Ofir Shalvi ,  Eyal Gurgi ,  Naftali Sommer ,  Oren Golov

    IPC: G11C27/00

    CPC classification number: G11C11/5628 ,  G11C27/005 ,  G11C29/00

    Abstract: A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in the memory cells. The data is stored in the memory cells by applying to the memory cells programming pulses that cause the levels of the physical quantity stored in the memory cells to transition between the programming states, such that a given transition is caused by only a single programming pulse.

    Abstract translation: 一种用于在模拟存储单元中进行数据存储的方法包括定义用于在模拟存储器单元中存储数据的多个编程状态。 编程状态表示多于一个位的相应组合，并且对应于存储在存储器单元中的物理量的相应不同级别。 通过向存储器单元施加编程脉冲将数据存储在存储器单元中，编程脉冲使存储单元中存储的物理量的电平在编程状态之间转变，使得给定的转换仅由单个编程脉冲引起。

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