公开(公告)号：US20150159271A1

公开(公告)日：2015-06-11

申请号：US14561513

申请日：2014-12-05

Applicant: Veeco ALD Inc.

Inventor： Sang In Lee ,  Chang Wan Hwang

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/22

CPC classification number: C23C16/45525 ,  C23C16/22 ,  C23C16/45529 ,  Y10T428/2495 ,  Y10T428/31663

Abstract: A plurality of non-isostructural layers are deposited onto a substrate. An inorganic layer is deposited onto the substrate by adsorbing metal atoms to the substrate. The inorganic layer on the substrate is exposed to a hydrocarbon-containing source precursor to deposit a first hydrocarbon-containing layer by adsorbing the hydrocarbon-containing source precursor onto the inorganic layer. The first hydrocarbon-containing layer on the substrate is exposed to a reactant precursor to increase reactivity of the first hydrocarbon-containing layer on the substrate, and a second hydrocarbon-containing layer is deposited onto the first hydrocarbon-containing layer on the substrate. The process may be repeated to deposit the plurality of layers. The second hydrocarbon-containing layer may have higher hydrocarbon content and may be deposited at a higher deposition rate than the first hydrocarbon-containing layer.

Abstract translation: 多个非同构结构层沉积在基底上。 通过将金属原子吸附到基底上而将无机层沉积在基底上。 通过将含烃源体前体吸附到无机层上，使基底上的无机层暴露于含烃源前体以沉积第一含烃层。 衬底上的第一含烃层暴露于反应物前体以增加第一含烃层在衬底上的反应性，并且第二含烃层沉积在衬底上的第一含烃层上。 可以重复该过程以沉积多个层。 第二含烃层可以具有较高的烃含量，并且可以以比第一含烃层更高的沉积速率沉积。

公开(公告)号：US20150148557A1

公开(公告)日：2015-05-28

申请号：US14546948

申请日：2014-11-18

Applicant: Veeco ALD Inc.

Inventor： Sang In Lee ,  Chang Wan Hwang

IPC: C07F5/06 ,  C07F7/10 ,  B05B7/00 ,  C07F7/00 ,  B05D1/00 ,  B05B3/00

CPC classification number: C07F5/068 ,  C07F7/1804 ,  C23C16/401 ,  C23C16/403 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45578

Abstract: A material is deposited onto a substrate by exposing the substrate to a metal-containing precursor to adsorb metal atoms of the metal-containing precursor to the substrate. The substrate injected with the metal-containing precursor is exposed to an organic precursor to deposit a layer of material by a reaction of the organic precursor with the metal atoms adsorbed to the substrate. The substrate is exposed to radicals of a reducing agent to increase reactivity of the material deposited on the substrate. The radicals of the reducing agent are produced by applying a voltage differential with electrodes to a gas such as hydrogen. The substrate may be exposed to radicals before and/or after exposing the substrate to the organic precursor. The substrate may be sequentially exposed to two or more different organic precursors. The material deposited on the substrate may be a metalcone such as Alucone, Zincone, Zircone, Titanicone, or Nickelcone.

Abstract translation: 通过将基底暴露于含金属的前体以将含金属的前体的金属原子吸附到基底上，将材料沉积到基底上。 注入含金属的前体的基体通过有机前体与吸附到基底上的金属原子的反应而暴露于有机前体以沉积一层材料。 底物暴露于还原剂的自由基以增加沉积在基底上的材料的反应性。 还原剂的自由基是通过向诸如氢的气体施加电极的电压差而产生的。 在将衬底暴露于有机前体之前和/或之后，衬底可暴露于自由基。 衬底可以顺序暴露于两种或更多种不同的有机前体。 沉积在基底上的材料可以是金属酮，例如Alucone，Zincone，Zircone，Titanicone或Nickelcone。

公开(公告)号：US20160032452A1

公开(公告)日：2016-02-04

申请号：US14808152

申请日：2015-07-24

Applicant: Veeco ALD Inc.

Inventor： Sang In Lee ,  Chang Wan Hwang

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/50

CPC classification number: C23C16/405 ,  C23C16/407 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45551

Abstract: A film of source precursor molecules injected onto a substrate are reacted with hydrogen radicals, such as those produced in a hydrogen plasma, prior to reaction with a reactant precursor. This replaces the functional groups of the reactant precursor (e.g., methyl groups in alkyl groups) with hydrogen, thus reducing the overall size of the source precursor molecule. An additional cycle of source precursor molecules are injected onto the substrate, some of which occupy portions of the substrate surface left unoccupied by the now absent methyl functional groups. This increases the density of source precursor molecules (i.e., reaction sites) on the substrate. The reactivity of the source precursor molecules exposed to hydrogen radicals (or an H2 plasma) is also increased.

Abstract translation: 在与反应物前体反应之前，将注入到基底上的源前体分子的膜与氢自由基（例如在氢等离子体中产生的那些）反应。 这用氢代替了反应物前体的官能团（例如烷基中的甲基），从而降低了源前体分子的整体尺寸。 源前体分子的另外的循环被注入到衬底上，其中一些循环占据衬底表面的部分，而现在没有存在的甲基官能团。 这增加了基底上的源前体分子（即反应位点）的密度。 暴露于氢自由基（或H 2等离子体）的源前体分子的反应性也增加。

公开(公告)号：US20150104574A1

公开(公告)日：2015-04-16

申请号：US14514296

申请日：2014-10-14

Applicant: Veeco ALD Inc.

Inventor： Sang In Lee ,  Chang Wan Hwang ,  Jeong Ah Yoon

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/18

CPC classification number: C23C16/45534 ,  C23C16/402 ,  C23C16/45551 ,  C23C16/45553

Abstract: Embodiments relate to an atomic layer deposition (ALD) process that uses a seed precursor for increased deposition rate. A first reactant precursor (e.g., H2O) may be formed as a result of reaction. The first reactant precursor may react with or substitute source precursor (e.g., 3DMAS) in a subsequent process to deposit material on a substrate. In addition, a second reactant precursor (e.g., radicals) may be separately injected onto the substrate previously injected with the source precursor. By causing the source precursor to react with the first reactant precursor from the surface of the substrate and also react with the second reactant provided by the injector, the material is deposited on the substrate in an expedient manner.

Abstract translation: 实施方案涉及使用种子前体提高沉积速率的原子层沉积（ALD）工艺。 作为反应的结果可以形成第一反应物前体（例如H 2 O）。 第一反应物前体可以在随后的过程中与源前体（例如，3DMAS）反应或在基底上沉积材料。 此外，第二反应物前体（例如自由基）可以分别注入预先注入源前体的基底上。 通过使源前体从衬底的表面与第一反应物前体反应并且还与由注射器提供的第二反应物反应，材料以合适的方式沉积在衬底上。

公开(公告)号：US09376455B2

公开(公告)日：2016-06-28

申请号：US14546948

申请日：2014-11-18

Applicant: Veeco ALD Inc.

Inventor： Sang In Lee ,  Chang Wan Hwang

IPC: C07F7/00 ,  B05D1/00 ,  C07F5/06 ,  C07F7/18 ,  C23C16/40 ,  C23C16/452 ,  C23C16/455

CPC classification number: C07F5/068 ,  C07F7/1804 ,  C23C16/401 ,  C23C16/403 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/45578

Abstract: A material is deposited onto a substrate by exposing the substrate to a metal-containing precursor to adsorb metal atoms of the metal-containing precursor to the substrate. The substrate injected with the metal-containing precursor is exposed to an organic precursor to deposit a layer of material by a reaction of the organic precursor with the metal atoms adsorbed to the substrate. The substrate is exposed to radicals of a reducing agent to increase reactivity of the material deposited on the substrate. The radicals of the reducing agent are produced by applying a voltage differential with electrodes to a gas such as hydrogen. The substrate may be exposed to radicals before and/or after exposing the substrate to the organic precursor. The substrate may be sequentially exposed to two or more different organic precursors. The material deposited on the substrate may be a metalcone such as Alucone, Zincone, Zircone, Titanicone, or Nickelcone.

Abstract translation: 通过将基底暴露于含金属的前体以将含金属的前体的金属原子吸附到基底上，将材料沉积到基底上。 注入含金属的前体的基体通过有机前体与吸附到基底上的金属原子的反应而暴露于有机前体以沉积一层材料。 底物暴露于还原剂的自由基以增加沉积在基底上的材料的反应性。 还原剂的自由基是通过向诸如氢的气体施加电极的电压差而产生的。 在将衬底暴露于有机前体之前和/或之后，衬底可暴露于自由基。 衬底可以顺序暴露于两种或更多种不同的有机前体。 沉积在基底上的材料可以是金属酮，例如Alucone，Zincone，Zircone，Titanicone或Nickelcone。