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公开(公告)号：US07501345B1
公开(公告)日：2009-03-10
申请号：US12057688
申请日：2008-03-28
申请人： Veeraraghaven S. Basker , Hariklia Deligianni , Balasubramanian S. Pranatharthi Haran , James J. Kelly , Christian Lavoie , George G. Totir
发明人： Veeraraghaven S. Basker , Hariklia Deligianni , Balasubramanian S. Pranatharthi Haran , James J. Kelly , Christian Lavoie , George G. Totir
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , C23C18/1642 , C23C18/54 , H01L21/288
摘要： Silicide formation processes are disclosed that use an electrochemical displacement reaction in the absence of an externally applied current or potential. In an embodiment, a method for forming an integrated circuit comprises: depositing a metallic material upon select areas of a semiconductor topography comprising silicon by contacting the semiconductor topography with an aqueous solution comprising an acid and a metal salt to cause an electrochemical displacement reaction in the absence of an externally applied current or potential, wherein a concentration of the metal salt in the aqueous solution is about 0.01 millimolar to about 0.5 millimolar; and annealing the metallic material to form a silicide upon the areas of the semiconductor topography comprising the silicon.
摘要翻译： 公开了在没有外部施加的电流或电位的情况下使用电化学置换反应的硅化物形成方法。 在一个实施例中，一种用于形成集成电路的方法包括：通过使半导体形貌与包含酸和金属盐的水溶液接触，在包含硅的半导体形貌的选择区域上沉积金属材料，以引起电化学位移反应 不存在外部施加的电流或电势，其中金属盐在水溶液中的浓度为约0.01毫摩尔至约0.5毫摩尔; 并且在包括硅的半导体形貌的区域上退火金属材料以形成硅化物。
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2.发明授权公开(公告)号：US08252673B2
公开(公告)日：2012-08-28
申请号：US12643454
申请日：2009-12-21
IPC分类号： H01L21/425
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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3.发明申请公开(公告)号：US20110151653A1
公开(公告)日：2011-06-23
申请号：US12643454
申请日：2009-12-21
IPC分类号： H01L21/306 , H01L21/266 , G03F7/42
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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公开(公告)号：US08637405B2
公开(公告)日：2014-01-28
申请号：US13165339
申请日：2011-06-21
CPC分类号： H01L31/03845 , B82Y30/00 , C09K13/02 , H01L31/02363 , H01L31/1804 , H01L31/186 , Y02E10/547 , Y02P70/521
摘要： A method of texturing a surface of a crystalline silicon substrate is provided. The method includes immersing a crystalline silicon substrate into an aqueous alkaline etchant solution to form a pyramid shaped textured surface, with (111) faces exposed, on the crystalline silicon substrate. The aqueous alkaline etchant solution employed in the method of the present disclosure includes an alkaline component and a nanoparticle slurry component. Specifically, the aqueous alkaline etchant solution of the present disclosure includes 0.5 weight percent to 5 weight percent of an alkaline component and from 0.1 weight percent to 5 weight percent of a nanoparticle slurry on a dry basis.
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公开(公告)号：US08563408B2
公开(公告)日：2013-10-22
申请号：US13535528
申请日：2012-06-28
IPC分类号： H01L21/425
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
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6.发明授权公开(公告)号：US08455420B2
公开(公告)日：2013-06-04
申请号：US13535466
申请日：2012-06-28
IPC分类号： G03F7/42
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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公开(公告)号：US20110143482A1
公开(公告)日：2011-06-16
申请号：US13005821
申请日：2011-01-13
申请人： Solomon Assefa , Jack O. Chu , Martin M. Frank , William M. Green , Young-hee Kim , George G. Totir , Joris Van Campenhout , Yurri A. Vlasov , Ying Zhang
发明人： Solomon Assefa , Jack O. Chu , Martin M. Frank , William M. Green , Young-hee Kim , George G. Totir , Joris Van Campenhout , Yurri A. Vlasov , Ying Zhang
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , B82Y20/00 , G02B6/12004 , G02B6/136 , G02B2006/12123 , H01L31/109 , H01L31/1812 , Y02E10/547 , Y02P70/521
摘要： A vertical stack of a first silicon germanium alloy layer, a second epitaxial silicon layer, a second silicon germanium layer, and a germanium layer are formed epitaxially on a top surface of a first epitaxial silicon layer. The second epitaxial silicon layer, the second silicon germanium layer, and the germanium layer are patterned and encapsulated by a dielectric cap portion, a dielectric spacer, and the first silicon germanium layer. The silicon germanium layer is removed between the first and second silicon layers to form a silicon germanium mesa structure that structurally support an overhanging structure comprising a stack of a silicon portion, a silicon germanium alloy portion, a germanium photodetector, and a dielectric cap portion. The germanium photodetector is suspended by the silicon germanium mesa structure and does not abut a silicon waveguide. Germanium diffusion into the silicon waveguide and defect density in the germanium detector are minimized.
摘要翻译： 在第一外延硅层的顶表面上外延地形成第一硅锗合金层，第二外延硅层，第二硅锗层和锗层的垂直叠层。 第二外延硅层，第二硅锗层和锗层通过介电盖部分，电介质间隔物和第一硅锗层被图案化和封装。 在第一和第二硅层之间去除硅锗层以形成硅锗台面结构，其结构上支撑包括硅部分，硅锗合金部分，锗光电检测器和介电帽部分的叠层的悬垂结构。 锗光电探测器由硅锗台面结构悬挂而不邻接硅波导。 锗扩散到硅波导和锗检测器中的缺陷密度被最小化。
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8.发明申请公开(公告)号：US20130143397A1
公开(公告)日：2013-06-06
申请号：US13612981
申请日：2012-09-13
IPC分类号： H01L21/28
CPC分类号： H01L21/32139 , H01L21/31133 , H01L21/823437 , H01L21/823828
摘要： An organic planarizing layer (OPL) is formed atop a semiconductor substrate which includes a plurality of gate lines thereon. Each gate line includes at least a high k gate dielectric and a metal gate. A patterned photoresist having at least one pattern formed therein is then positioned atop the OPL. The at least one pattern in the photoresist is perpendicular to each of the gate lines. The pattern is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each including at least a high k gate dielectric portion and a metal gate portion. The patterned photoresist and the remaining OPL layer are then removed utilizing a sequence of steps including first contacting with a first acid, second contacting with an aqueous cerium-containing solution, and third contacting with a second acid.
摘要翻译： 在其上包括多条栅极线的半导体衬底上形成有机平面化层（OPL）。 每个栅极线包括至少一个高k栅极电介质和金属栅极。 然后将其中形成有至少一种图案的图案化的光致抗蚀剂定位在OPL的顶部。 光致抗蚀剂中的至少一个图案垂直于每个栅极线。 然后通过蚀刻将图案转移到OPL和每个下面的栅极线的部分，以提供多个栅极堆叠，每个栅极堆叠包括至少一个高k栅极电介质部分和金属栅极部分。 然后使用一系列步骤除去图案化的光致抗蚀剂和剩余的OPL层，所述步骤包括首先与第一酸接触，第二次与含铈水溶液接触，并且与第二次酸接触。
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9.发明授权公开(公告)号：US08440494B2
公开(公告)日：2013-05-14
申请号：US13112465
申请日：2011-05-20
IPC分类号： H01L21/00
CPC分类号： C09K13/02 , H01L31/02363 , Y02E10/50
摘要： Alternative additives that can be used in place of isopropyl alcohol in aqueous alkaline etchant solutions for texturing a surface of a single-crystalline silicon substrate are provided. The alternative additives do not have volatile constituents, yet can be used in an aqueous alkaline etchant solution to provide a pyramidal shaped texture surface to the single-crystalline silicon substrate that is exposed to such an etchant solution. Also provided is a method of forming a textured silicon surface. The method includes immersing a single-crystalline silicon substrate into an etchant solution to form a pyramid shaped textured surface on the single-crystalline silicon substrate. The etchant solution includes an alkaline component, silicon (etched into the solution as a bath conditioner) and glycerol or ethylene glycol as an additive. The textured surface of the single-crystalline silicon substrate has (111) faces that are now exposed.
摘要翻译： 提供了可用于代替异丙醇的水性碱性蚀刻剂溶液中用于织构单晶硅衬底的表面的替代添加剂。 替代的添加剂不具有挥发性成分，但也可用于碱性蚀刻剂水溶液中以向暴露于这种蚀刻剂溶液的单晶硅衬底提供金字塔形的纹理表面。 还提供了形成纹理硅表面的方法。 该方法包括将单晶硅衬底浸入蚀刻剂溶液中以在单晶硅衬底上形成棱锥形织构表面。 蚀刻剂溶液包括碱性组分，硅（作为浴调节剂蚀刻到溶液中）和甘油或乙二醇作为添加剂。 单晶硅衬底的纹理表面具有现在暴露的（111）面。
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10.发明申请公开(公告)号：US20120270763A1
公开(公告)日：2012-10-25
申请号：US13535466
申请日：2012-06-28
IPC分类号： G03F7/42
CPC分类号： H01L21/311 , G03F7/40 , G03F7/423
摘要： A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist.
摘要翻译： 提供了一种可用于汽提离子注入光刻胶的旋涂配方，其包括含有至少一个酸性官能团的水溶性聚合物的水溶液和至少一种含镧系金属的氧化剂。 将旋涂制剂施加到离子注入的光致抗蚀剂上并烘烤以形成改性的光致抗蚀剂。 改性光致抗蚀剂可溶于含水，酸或有机溶剂。 因此，上述溶剂之一可以用于完全剥离离子注入的光致抗蚀剂以及可能存在的任何光致抗蚀剂残余物。 冲洗步骤可以跟随改性光致抗蚀剂的剥离。
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