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公开(公告)号：US20200048286A1
公开(公告)日：2020-02-13
申请号：US16657105
申请日：2019-10-18
发明人： Manchao Xiao , Raymond Nicholas Vrtis , Robert Gordon Ridgeway , William Robert Entley , Jennifer Lynn Anne Achtyl , Xinjian Lei , Daniel P. Spence
摘要： A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.
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公开(公告)号：US10395920B2
公开(公告)日：2019-08-27
申请号：US15889687
申请日：2018-02-06
发明人： Raymond Nicholas Vrtis , Robert Gordon Ridgeway , Jianheng Li , William Robert Entley , Jennifer Lynn Anne Achtyl , Xinjian Lei
摘要： A method and composition for producing a low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising a silacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less.
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公开(公告)号：US10249489B2
公开(公告)日：2019-04-02
申请号：US15789790
申请日：2017-10-20
发明人： Raymond Nicholas Vrtis , Robert Gordon Ridgeway , Jennifer Lynn Anne Achtyl , William Robert Entley , Dino Sinatore , Kathleen Esther Theodorou , Andrew J. Adamczyk
摘要： Low dielectric organosilicon films are deposited by a process comprising the steps of: providing a substrate within a vacuum chamber; introducing into the vacuum chamber a gaseous silicon containing precursor composition comprising at least one organosilicon precursor selected from the group consisting of Formula (I) and Formula (II): wherein, R1, R2, R3, R4, R5, and R6 are as defined herein, and applying energy to the gaseous structure forming composition in the vacuum chamber to induce reaction of the at least one organosilicon precursor to deposit a film on at least a portion of the substrate.
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公开(公告)号：US12049695B2
公开(公告)日：2024-07-30
申请号：US16134410
申请日：2018-09-18
发明人： Raymond Nicholas Vrtis , William Robert Entley , Robert Gordon Ridgeway , Xinjian Lei , John Francis Lehmann , Manchao Xiao
CPC分类号： C23C16/401 , C23C16/345 , C23C16/36 , C23C16/48 , C23C16/50 , H01L21/02126 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/02326 , H01L21/02337 , H01L21/0234 , H01L21/02348
摘要： Compositions for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, a trisilylamine-based compound, and a cyclic trisilazane compound.
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公开(公告)号：US11158498B2
公开(公告)日：2021-10-26
申请号：US16443978
申请日：2019-06-18
发明人： Robert G. Ridgeway , Jennifer Lynn Anne Achtyl , Raymond N. Vrtis , Xinjian Lei , William Robert Entley
摘要： A chemical vapor deposition method for producing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing gaseous reagents into the reaction chamber wherein the gaseous reagents comprise a silicon precursor comprising an silicon compound having Formula I as defined herein and applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film.
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公开(公告)号：US20190017167A1
公开(公告)日：2019-01-17
申请号：US16134410
申请日：2018-09-18
发明人： Raymond Nicholas Vrtis , William Robert Entley , Robert Gordon Ridgeway , Xinjian Lei , John Francis Lehmann , Manchao Xiao
摘要： Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.
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公开(公告)号：US11164739B2
公开(公告)日：2021-11-02
申请号：US16268660
申请日：2019-02-06
发明人： Raymond Nicholas Vrtis , Robert Gordon Ridgeway , Jennifer Lynn Anne Achtyl , William Robert Entley , Dino Sinatore , Kathleen Esther Theodorou
IPC分类号： H01L21/02
摘要： According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silicon-containing precursor selected from an organosilane and an organosiloxane, and further includes at least one second silicon-containing precursor selected from compounds represented by the structure of Formula I: R1nSi(OR2)4-n (I), in which R1 is a linear, branched, or cyclic C2-C6 alkyl group; n=1-3; and R2 is a linear, branched, or cyclic C1-C6 alkyl group. A first energy source is applied to the gaseous organosilicate composition in the vacuum chamber to induce reaction of the first silicon-containing precursor and the at least one second silicon-containing precursor and thereby deposit the organosilicate film on at least a portion of the substrate.
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8.发明申请公开(公告)号：US20190244810A1
公开(公告)日：2019-08-08
申请号：US16268660
申请日：2019-02-06
发明人： Raymond Nicholas Vrtis , Robert Gordon Ridgeway , Jennifer Lynn Anne Achtyl , William Robert Entley , Dino Sinatore , Kathleen Esther Theodorou
IPC分类号： H01L21/02
CPC分类号： H01L21/02118 , H01L21/02211 , H01L21/02274
摘要： According to a chemical vapor deposition method for depositing an organosilicate film on a substrate, a gaseous organosilicate composition is introduced into a vacuum chamber. The gaseous organosilicate composition includes a first silicon-containing precursor selected from an organosilane and an organosiloxane, and further includes at least one second silicon-containing precursor selected from compounds represented by the structure of Formula I: R1nSi(OR2)4-n (I), in which R1 is a linear, branched, or cyclic C2-C6 alkyl group; n=1-3; and R2 is a linear, branched, or cyclic C1-C6 alkyl group. A first energy source is applied to the gaseous organosilicate composition in the vacuum chamber to induce reaction of the first silicon-containing precursor and the at least one second silicon-containing precursor and thereby deposit the organosilicate film on at least a portion of the substrate.
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公开(公告)号：US10106890B2
公开(公告)日：2018-10-23
申请号：US15520326
申请日：2015-10-23
发明人： Jianheng Li , John Francis Lehmann , Xinjian Lei , Raymond Nicholas Vrtis , Robert Gordon Ridgeway , William Robert Entley
摘要： Compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.
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公开(公告)号：US20180122632A1
公开(公告)日：2018-05-03
申请号：US15789790
申请日：2017-10-20
发明人： Raymond Nicholas Vrtis , Robert Gordon Ridgeway , Jennifer Lynn Anne Achtyl , William Robert Entley , Dino Sinatore , Kathleen Esther Theodorou , Andrew J. Adamczyk
CPC分类号： H01L21/02216 , C23C16/401 , C23C16/46 , C23C16/48 , C23C16/50 , C23C16/505 , C23C16/56 , H01L21/02137 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/02348 , H01L21/0262
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.
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