公开(公告)号：US08969969B2

公开(公告)日：2015-03-03

申请号：US12727312

申请日：2010-03-19

申请人： Victor W. C. Chan ,  Narasimhulu Kanike ,  Huiling Shang ,  Varadarajan Vidya ,  Jun Yuan ,  Roger Allen Booth, Jr.

发明人： Victor W. C. Chan ,  Narasimhulu Kanike ,  Huiling Shang ,  Varadarajan Vidya ,  Jun Yuan ,  Roger Allen Booth, Jr.

IPC分类号： H01L27/092 ,  H01L21/8234 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823412

摘要： Transistors exhibiting different electrical characteristics such as different switching threshold voltage or different leakage characteristics are formed on the same chip or wafer by selectively removing a film or layer which can serve as an out-diffusion sink for an impurity region such as a halo implant and out-diffusing an impurity such as boron into the out-diffusion sink, leaving the impurity region substantially intact where the out-diffusion sink has been removed. In forming CMOS integrated circuits, such a process allows substantially optimal design for both low-leakage and low threshold transistors and allows a mask and additional associated processes to be eliminated, particularly where a tensile film is employed to increase electron mobility since the tensile film can be removed from selected NMOS transistors concurrently with removal of the tensile film from PMOS transistors.

公开(公告)号：US20100237425A1

公开(公告)日：2010-09-23

申请号：US12727312

申请日：2010-03-19

申请人： Victor W.C. Chan ,  Narasimhulu Kanike ,  Huiling Shang ,  Varadarajan Vidya ,  Jun Yuan ,  Roger Allen Booth, JR.

发明人： Victor W.C. Chan ,  Narasimhulu Kanike ,  Huiling Shang ,  Varadarajan Vidya ,  Jun Yuan ,  Roger Allen Booth, JR.

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823807 ,  H01L21/823412

摘要： Transistors exhibiting different electrical characteristics such as different switching threshold voltage or different leakage characteristics are formed on the same chip or wafer by selectively removing a film or layer which can serve as an out-diffusion sink for an impurity region such as a halo implant and out-diffusing an impurity such as boron into the out-diffusion sink, leaving the impurity region substantially intact where the out-diffusion sink has been removed. In forming CMOS integrated circuits, such a process allows substantially optimal design for both low-leakage and low threshold transistors and allows a mask and additional associated processes to be eliminated, particularly where a tensile film is employed to increase electron mobility since the tensile film can be removed from selected NMOS transistors concurrently with removal of the tensile film from PMOS transistors.

摘要翻译： 通过选择性地去除可以用作杂质区域的外扩散阱的膜或层，形成具有不同电特性的晶体管，例如不同的开关阈值电压或不同的泄漏特性在相同的芯片或晶片上， 将诸如硼之类的杂质引入扩散槽中，使外扩散槽已经被去除时留下杂质区域基本完整。 在形成CMOS集成电路中，这种工艺允许低泄漏和低阈值晶体管的基本上最佳设计，并允许消除掩模和附加的相关工艺，特别是在使用拉伸膜来增加电子迁移率的情况下，因为拉伸膜可以 从PMOS晶体管去除拉伸膜同时从选定的NMOS晶体管中去除。

公开(公告)号：US08558313B2

公开(公告)日：2013-10-15

申请号：US13425681

申请日：2012-03-21

申请人： Anthony I. Chou ,  Arvind Kumar ,  Shreesh Narasimha ,  Ning Su ,  Huiling Shang

发明人： Anthony I. Chou ,  Arvind Kumar ,  Shreesh Narasimha ,  Ning Su ,  Huiling Shang

IPC分类号： H01L27/088

CPC分类号： H01L27/1207 ,  H01L21/84

摘要： An integrated circuit is provided that integrates an bulk FET and an SOI FET on the same chip, where the bulk FET includes a gate conductor over a gate oxide formed over a bulk substrate, where the gate dielectric of the bulk FET has the same thickness and is substantially coplanar with the buried insulating layer of the SOI FET. In a preferred embodiment, the bulk FET is formed from an SOI wafer by forming bulk contact trenches through the SOI layer and the buried insulating layer of the SOI wafer adjacent an active region of the SOI layer in a designated bulk device region. The active region of the SOI layer adjacent the bulk contact trenches forms the gate conductor of the bulk FET which overlies a portion of the underlying buried insulating layer, which forms the gate dielectric of the bulk FET.

摘要翻译： 提供了一种集成电路，其将同一芯片上的体FET和SOI FET集成在一起，其中，本体FET包括在大块衬底上形成的栅极氧化物上的栅极导体，其中本体FET的栅极电介质具有相同的厚度， 与SOI FET的掩埋绝缘层基本共面。 在优选实施例中，通过在指定的大容量器件区域中与SOI层的有源区相邻的SOI层和SOI晶片的掩埋绝缘层形成体接触沟槽，从SOI晶片形成体FET。 邻近体接触沟槽的SOI层的有源区域形成体FET的栅极导体，其覆盖形成本体FET的栅极电介质的下层掩埋绝缘层的一部分。

公开(公告)号：US08154130B2

公开(公告)日：2012-04-10

申请号：US12107992

申请日：2008-04-23

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

IPC分类号： H01L29/40

CPC分类号： H01L21/28525 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.

摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。

公开(公告)号：US20110318897A1

公开(公告)日：2011-12-29

申请号：US12823168

申请日：2010-06-25

申请人： Huiling Shang ,  Ying Li ,  Henry K. Utomo

发明人： Huiling Shang ,  Ying Li ,  Henry K. Utomo

IPC分类号： H01L21/02

CPC分类号： H01L28/20 ,  H01L21/76229 ,  H01L27/0629

摘要： Forming a polysilicon embedded resistor within the shallow trench isolations separating the active area of two adjacent devices, minimizing the electrical interaction between two devices and reducing the capacitive coupling or leakage therebetween. The precision polysilicon resistor is formed independently from the formation of gate electrodes by creating a recess region within the STI region when the polysilicon resistor is embedded within the STI recess region. The polysilicon resistor is decoupled from the gate electrode, making it immune to gate electrode related processes. The method forms the polysilicon resistor following the formation of STIs but before the formation of the p-well and n-well implants. In another embodiment the resistor is formed following the formation of the STIs but after the formation of the well implants.

摘要翻译： 在分离两个相邻器件的有源区域的浅沟槽隔离件之间形成多晶硅嵌入式电阻器，最小化两个器件之间的电气相互作用，并减少它们之间的电容耦合或泄漏。 当多晶硅电阻器嵌入STI凹陷区域内时，通过在STI区域内形成凹陷区域，独立于形成栅电极而形成精密多晶硅电阻器。 多晶硅电阻器与栅极电极分离，使其免受与栅电极相关的工艺的影响。 该方法在形成STI之后但在形成p阱和n阱注入之前形成多晶硅电阻器。 在另一个实施例中，在形成STI之后但在形成井注入之后形成电阻器。

公开(公告)号：US20090212366A1

公开(公告)日：2009-08-27

申请号：US12434233

申请日：2009-05-01

申请人： Leland Chang ,  Wilfried E. Haensch ,  Meikei Ieong ,  Ghavam Shahidi ,  Huiling Shang

发明人： Leland Chang ,  Wilfried E. Haensch ,  Meikei Ieong ,  Ghavam Shahidi ,  Huiling Shang

IPC分类号： H01L27/12

CPC分类号： H01L29/785 ,  H01L29/66628 ,  H01L29/66795

摘要： A FINFET-containing structure having multiple FINs that are merged together without source/drain contact pads or a local interconnect is provided. In accordance with the present invention, the inventive structure includes a plurality of semiconducting bodies (i.e., FINs) which extend above a surface of a substrate. A common patterned gate stack surrounds the plurality of semiconducting bodies and a nitride-containing spacer is located on sidewalls of the common patterned gate stack. An epitaxial semiconductor layer is used to merge each of the semiconducting bodies together.

摘要翻译： 提供了一种具有融合在一起而没有源极/漏极接触焊盘或局部互连的多个FIN的具有FINFET的结构。 根据本发明，本发明的结构包括在衬底的表面上方延伸的多个半导电体（即，FIN）。 常见的图案化栅极堆叠围绕多个半导体本体，并且含氮化物的间隔物位于公共图案化栅叠层的侧壁上。 使用外延半导体层将每个半导电体合并在一起。

公开(公告)号：US08080838B2

公开(公告)日：2011-12-20

申请号：US12434233

申请日：2009-05-01

申请人： Leland Chang ,  Wilfried E. Haensch ,  Meikei Ieong ,  Ghavam Shahidi ,  Huiling Shang

发明人： Leland Chang ,  Wilfried E. Haensch ,  Meikei Ieong ,  Ghavam Shahidi ,  Huiling Shang

IPC分类号： H01L27/088

CPC分类号： H01L29/785 ,  H01L29/66628 ,  H01L29/66795

摘要： A FINFET-containing structure having multiple FINs that are merged together without source/drain contact pads or a local interconnect is provided. The structure includes a plurality of semiconducting bodies (i.e., FINs) which extend above a surface of a substrate. A common patterned gate stack surrounds the plurality of semiconducting bodies and a nitride-containing spacer is located on sidewalls of the common patterned gate stack. An epitaxial semiconductor layer is used to merge each of the semiconducting bodies together.

摘要翻译： 提供了一种具有融合在一起而没有源极/漏极接触焊盘或局部互连的多个FIN的具有FINFET的结构。 该结构包括在衬底的表面上方延伸的多个半导电体（即，FIN）。 常见的图案化栅极堆叠围绕多个半导体本体，并且含氮化物的间隔物位于公共图案化栅叠层的侧壁上。 使用外延半导体层将每个半导电体合并在一起。

公开(公告)号：US20080220606A1

公开(公告)日：2008-09-11

申请号：US12107992

申请日：2008-04-23

申请人： Cyril Cabral ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

发明人： Cyril Cabral ,  Roy A. Carruthers ,  Christophe Detavernier ,  Simon Gaudet ,  Christian Lavoie ,  Huiling Shang

IPC分类号： H01L21/28

CPC分类号： H01L21/28525 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665

摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.

摘要翻译： 提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。 本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。 在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。 在暴露的区域中，含Ge衬底与含Si金属层接触。 然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。 在一些实施方案中，附加的退火步骤可以跟随去除步骤。 本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。

公开(公告)号：US20070218621A1

公开(公告)日：2007-09-20

申请号：US11799261

申请日：2007-04-10

申请人： Huiling Shang ,  Meikei Leong ,  Jack Chu ,  Kathryn Guarini

发明人： Huiling Shang ,  Meikei Leong ,  Jack Chu ,  Kathryn Guarini

IPC分类号： H01L21/8238

CPC分类号： H01L21/84 ,  H01L21/823807 ,  H01L27/1203 ,  H01L29/1054 ,  H01L29/7841

摘要： A structure and method of fabrication for PFET devices in a compressively strained Ge layer is disclosed. The fabrication method of such devices is compatible with standard CMOS technology and it is fully scalable. The processing includes selective epitaxial depositions of an over 50% Ge content buffer layer, a pure Ge layer, and a SiGe top layer. Fabricated buried channel PMOS devices hosted in the compressively strained Ge layer show superior device characteristics relative to similar Si devices.

摘要翻译： 公开了一种用于压缩应变Ge层中的PFET器件的结构和方法。 这种器件的制造方法与标准CMOS技术兼容，并且具有完全可扩展性。 该处理包括超过50％Ge含量缓冲层，纯Ge层和SiGe顶层的选择性外延沉积。 承载在压缩应变Ge层中的制造掩埋沟道PMOS器件相对于类似的Si器件显示出优异的器件特性。

公开(公告)号：US06803266B2

公开(公告)日：2004-10-12

申请号：US10249184

申请日：2003-03-20

申请人： Paul M. Solomon ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kathryn W. Guarini ,  Fenton R. McFeely ,  Huiling Shang ,  John J. Yourkas

发明人： Paul M. Solomon ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kathryn W. Guarini ,  Fenton R. McFeely ,  Huiling Shang ,  John J. Yourkas

IPC分类号： H01L21336

CPC分类号： H01L29/517 ,  H01L21/263 ,  H01L21/28079 ,  H01L29/495 ,  Y10S438/91

摘要： A process for passivating the semiconductor-dielectric interface of a MOS structure to reduce the interface state density to a very low level. A particular example is a MOSFET having a tungsten electrode that in the past has prevented passivation of the underlying semiconductor-dielectric interface to an extent sufficient to reduce the interface state density to less than 5×1010/cm2−eV. Though substantially impervious to molecular hydrogen, thin tungsten layers are shown to be pervious to atomic hydrogen, enabling atomic hydrogen to be diffused through a tungsten electrode into an underlying semiconductor-dielectric interface. Three general approaches are encompassed: forming an aluminum-tungsten electrode stack in the presence of hydrogen so as to store atomic hydrogen between the tungsten and aluminum layers, followed by an anneal to cause the atomic hydrogen to diffuse through the tungsten layer and into the interface; subjecting a tungsten electrode to hydrogen plasma, during which atomic hydrogen diffuses through the electrode and into the semiconductor-dielectric interface; and implanting atomic hydrogen into tungsten electrode, followed by an anneal to cause the atomic hydrogen to diffuse through the electrode and into the semiconductor-dielectric interface.

摘要翻译： 一种用于钝化MOS结构的半导体 - 电介质界面以将界面态密度降低到非常低的水平的方法。 具体的示例是具有钨电极的MOSFET，其过去已经阻止下面的半导体 - 电介质界面的钝化达到足以将界面态密度降低到小于5×10 10 / cm 2 -eV的程度。 虽然基本上不透分子氢，但是显示出薄钨层可以透过原子氢，使原子氢能够通过钨电极扩散到下面的半导体 - 电介质界面。 包括三种一般方法：在氢的存在下形成铝 - 钨电极堆叠，以便在钨和铝层之间存储原子氢，随后进行退火，使原子氢扩散通过钨层并进入界面 ; 使钨电极经受氢等离子体，其中原子氢通过电极扩散并进入半导体 - 电介质界面; 并将原子氢注入钨电极中，随后进行退火，使原子氢扩散通过电极并进入半导体 - 电介质界面。