摘要:
A system employs an interventional tool (30), ultrasound imaging system and a multi-planar reformatting module (40). The interventional tool (30) has one or more image tracking points (31). The ultrasound imaging system includes an ultrasound probe (20) operable for generating an ultrasound volume image (22) of a portion or an entirety of the interventional tool (30) within an anatomical region. The multi-planar reformatting imaging module (40) generates two or more multi- planar reformatting images (41) of the interventional tool (30) within the anatomical region. A generation of the two multi-planar reformatting images (41) includes an identification of each image tracking point (31) within the ultrasound volume image (22), and a utilization of each identified image tracking point (31) as an origin of the multi-planar reformatting images (41).
摘要:
A system employs an interventional tool (30), ultrasound imaging system and a multi-planar reformatting module (40). The interventional tool (30) has one or more image tracking points (31). The ultrasound imaging system includes an ultrasound probe (20) operable for generating an ultrasound volume image (22) of a portion or an entirety of the interventional tool (30) within an anatomical region. The multi-planar reformatting imaging module (40) generates two or more multi- planar reformatting images (41) of the interventional tool (30) within the anatomical region. A generation of the two multi-planar reformatting images (41) includes an identification of each image tracking point (31) within the ultrasound volume image (22), and a utilization of each identified image tracking point (31) as an origin of the multi-planar reformatting images (41).
摘要:
An image-guided system includes an X-ray imaging device for generating one or more X-ray images illustrating a tool within an anatomical region, and an ultrasound imaging device for generating an ultrasound image illustrating the tool within the anatomical region. The image-guided system further includes a tool tracking device for visually tracking the tool within the anatomical region. In operation, the tool tracking device localizes a portion of the tool as located within the ultrasound image responsive to an identification of the portion of the tool as located within the X-ray image(s), and executes an image segmentation of an entirety of the tool as located within the ultrasound image relative to a localization of the portion of the tool as located within the ultrasound image.
摘要:
An image-guided system employs an X-ray imaging device (20) for generating one or more X-ray images (25, 26) illustrating a tool (41) within an anatomical region (40) and an ultrasound imaging device (30) for generating an ultrasound image (33) illustrating the tool (41) within the anatomical region (40). The image-guided system further employs a tool tracking device (50) for visually tracking the tool (41) within the anatomical region (40). In operation, the tool tracking device (50) localizes a portion of the tool (41) as located within the ultrasound image (33) responsive to an identification of the portion of the tool (41) as located within the X-ray image(s) (25, 26), and executes an image segmentation of an entirety of the tool (41) as located within the ultrasound image (33) relative to a localization of the portion of the tool (41) as located within the ultrasound image (33).
摘要:
A method, system, and program product are provided for accurately visualizing soft tissue motion on an x-ray image. Real time ultrasound images are registered to an x-ray image space. A point of interest is defined. Motion of the selected point is determined from the real time ultrasound images. The determined motion is applied to the selected point on the x-ray image.
摘要:
A semiconductor device includes a pillar formed on a substrate of the same conductivity type. The pillar has a vertical thickness that extends from a top surface down to the substrate. The pillar extends in first and second lateral directions in a loop shape. First and second dielectric regions are disposed on opposite lateral sides of the pillar, respectively. First and second conductive field plates are respectively disposed in the first and second dielectric regions. A metal layer is disposed on the top surface of the pillar, the metal layer forming a Schottky diode with respect to the pillar. When the substrate is raised to a high-voltage potential with respect to both the metal layer and the first and second field plates, the first and second field plates functioning capacitively to deplete the pillar of charge, thereby supporting the high-voltage potential along the vertical thickness of the pillar.
摘要:
In one embodiment, a high voltage field-effect transistor (HVFET) includes a field oxide layer that covers a first well region, the field oxide layer having a first thickness and extending in a second lateral direction from a drain region to near a second well region. A gate oxide covers a channel region and has a second dimension in a first lateral direction. A gate extends in the second lateral direction from the source region to over a portion of the field oxide layer, the gate being insulated from the channel region by the gate oxide, the gate extending in the first lateral dimension over an inactive area of the HVFET beyond the second dimension of the gate oxide, the gate being insulated from the first and second well regions over the inactive area by the field oxide layer.
摘要:
A high-voltage device structure comprises a resistor coupled to a tap transistor that includes a JFET in a configuration wherein a voltage provided at a terminal of the JFET is substantially proportional to an external voltage when the external voltage is less than a pinch-off voltage of the JFET. The voltage provided at the terminal being substantially constant when the external voltage is greater than the pinch-off voltage. One end of the resistor is substantially at the external voltage when the external voltage is greater than the pinch-off voltage. When the external voltage is negative, the resistor limits current injected into the substrate. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.
摘要:
In one embodiment, a transistor fabricated on a semiconductor die includes a first section of transistor segments disposed in a first area of the semiconductor die, and a second section of transistor segments disposed in a second area of the semiconductor die adjacent the first area. Each of the transistor segments in the first and second sections includes a pillar of a semiconductor material that extends in a vertical direction. First and second dielectric regions are disposed on opposite sides of the pillar. First and second field plates are respectively disposed in the first and second dielectric regions. Outer field plates of transistor segments adjoining first and second sections are either separated or partially merged.
摘要:
In one embodiment, a method comprises forming an epitaxial layer over a substrate of an opposite conductivity type, the epitaxial layer being separated by a buffer layer having a doping concentration that is substantially constant in a vertical direction down to the buffer layer. A pair of spaced-apart trenches is formed in the epitaxial layer from a top surface of the epitaxial layer down at least into the buffer layer. A dielectric material is formed in the trenches over the first and second sidewall portions. Source/collector and body regions of are formed at the top of the epitaxial layer, the body region separating the source/collector region of the pillar from a drift region of the epitaxial layer that extends from the body region to the buffer layer. An insulated gate member is then formed in each of the trenches adjacent to and insulated from the body region.