公开(公告)号：US20090266107A1

公开(公告)日：2009-10-29

申请号：US12518866

申请日：2007-11-20

申请人： Vikram Singh ,  Edward J. Grave ,  Paul Scott Northrop ,  Narasimhan Sundaram

发明人： Vikram Singh ,  Edward J. Grave ,  Paul Scott Northrop ,  Narasimhan Sundaram

IPC分类号： F25J3/00

CPC分类号： B01D3/166 ,  B01D3/14 ,  B01D3/141 ,  F25J3/0209 ,  F25J3/0233 ,  F25J3/0238 ,  F25J3/0266 ,  F25J2200/02 ,  F25J2200/50 ,  F25J2200/74 ,  F25J2200/96 ,  F25J2205/20 ,  F25J2205/40 ,  F25J2205/60 ,  F25J2205/80 ,  F25J2220/66 ,  F25J2240/40 ,  F25J2270/12 ,  F25J2280/40 ,  Y02C10/12

摘要： The present invention relates to methods and apparatuses for the operation of a distillation tower containing a controlled freezing zone and at least one distillation section. The process and tower design are utilized for the additional recovery of hydrocarbons from an acid gas. In this process, a separation process is utilized in which a multi-component feedstream is introduced into an apparatus that operates under solids forming conditions for at least one of the feedstream components. The freezable component, although typically CO2, H2S, or another acid gas, can be any component that has the potential for forming solids in the separation system. A dividing wall is added to at least a portion of the lower distillation section of the apparatus to effect the separation of at least some fraction of the hydrocarbons in that portion of the tower.

摘要翻译： 本发明涉及用于操作含有受控冷冻区和至少一个蒸馏段的蒸馏塔的方法和设备。 工艺和塔架设计用于从酸性气体中再次回收碳氢化合物。 在该方法中，使用分离方法，其中将多组分进料流引入到在至少一种进料流组分的固体形成条件下操作的装置中。 可冷冻组分虽然通常为CO 2，H 2 S或另一种酸性气体，但可以是在分离系统中具有形成固体的潜力的任何组分。 将分隔壁加入到装置的低级蒸馏段的至少一部分中以在塔的该部分中分离至少一部分烃。

公开(公告)号：US08312738B2

公开(公告)日：2012-11-20

申请号：US12518866

申请日：2007-11-20

申请人： Vikram Singh ,  Edward J. Grave ,  Paul Scott Northrop ,  Narasimhan Sundaram

发明人： Vikram Singh ,  Edward J. Grave ,  Paul Scott Northrop ,  Narasimhan Sundaram

IPC分类号： F25J3/00

CPC分类号： B01D3/166 ,  B01D3/14 ,  B01D3/141 ,  F25J3/0209 ,  F25J3/0233 ,  F25J3/0238 ,  F25J3/0266 ,  F25J2200/02 ,  F25J2200/50 ,  F25J2200/74 ,  F25J2200/96 ,  F25J2205/20 ,  F25J2205/40 ,  F25J2205/60 ,  F25J2205/80 ,  F25J2220/66 ,  F25J2240/40 ,  F25J2270/12 ,  F25J2280/40 ,  Y02C10/12

摘要： The present invention relates to methods and apparatuses for the operation of a distillation tower containing a controlled freezing zone and at least one distillation section. The process and tower design are utilized for the additional recovery of hydrocarbons from an acid gas. In this process, a separation process is utilized in which a multi-component feedstream is introduced into an apparatus that operates under solids forming conditions for at least one of the feedstream components. The freezable component, although typically CO2, H2S, or another acid gas, can be any component that has the potential for forming solids in the separation system. A dividing wall is added to at least a portion of the lower distillation section of the apparatus to effect the separation of at least some fraction of the hydrocarbons in that portion of the tower.

摘要翻译： 本发明涉及用于操作含有受控冷冻区和至少一个蒸馏段的蒸馏塔的方法和设备。 工艺和塔架设计用于从酸性气体中再次回收碳氢化合物。 在该方法中，使用分离方法，其中将多组分进料流引入到在至少一种进料流组分的固体形成条件下操作的装置中。 可冷冻组分虽然通常为CO 2，H 2 S或另一种酸性气体，但可以是在分离系统中具有形成固体的潜力的任何组分。 将分隔壁加入到装置的低级蒸馏段的至少一部分中以在塔的该部分中分离至少一部分烃。

公开(公告)号：US08877654B2

公开(公告)日：2014-11-04

申请号：US12760847

申请日：2010-04-15

申请人： Helen Maynard ,  Vikram Singh ,  Svetlana Radovanov ,  Harold Persing

发明人： Helen Maynard ,  Vikram Singh ,  Svetlana Radovanov ,  Harold Persing

IPC分类号： H01L21/31

CPC分类号： H01L21/02274 ,  H01L21/2236 ,  H01L21/3065 ,  H01L29/66803

摘要： A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.

摘要翻译： 提供等离子体处理方法。 等离子体处理方法包括使用脉冲功率等离子体的余辉进行保形加工。 在余辉期间，等电场线跟随工件表面的轮廓，允许以各种入射角度，特别是非平面表面引入离子。 在本公开的另一方面，压片可在等离子体余辉期间被正向偏压以将负离子吸引到工件。 可以执行各种适形处理步骤，例如植入，蚀刻和沉积。

公开(公告)号：US08460748B2

公开(公告)日：2013-06-11

申请号：US12855399

申请日：2010-08-12

申请人： Frank Sinclair ,  Vikram Singh

发明人： Frank Sinclair ,  Vikram Singh

IPC分类号： B05D5/12

CPC分类号： G11B5/012 ,  B82Y10/00 ,  G11B5/743

摘要： An improved patterned magnetic bit data storage media and a method for manufacturing the same is disclosed. In one particular exemplary embodiment, the improved patterned magnetic bit data storage media may comprise an active region exhibiting substantially ferromagnetism; and an inactive region exhibiting substantially paramagnetism, the inactive region comprising at least two grains and a grain boundary interposed therebetween, wherein each of the at least two grains contain ferromagnetic material, and wherein the at least two grains are antiferromagnetically coupled.

摘要翻译： 公开了一种改进的图案化磁位数据存储介质及其制造方法。 在一个特定示例性实施例中，改进的图案化磁位数据存储介质可以包括显示出基本上铁磁性的有源区; 和表现出基本上顺磁性的非活性区域，所述非活性区域包含至少两个晶粒和插入其间的晶界，其中所述至少两个晶粒中的每一个含有铁磁材料，并且其中所述至少两个晶粒是反铁磁耦合的。

公开(公告)号：US20120000421A1

公开(公告)日：2012-01-05

申请号：US12829794

申请日：2010-07-02

申请人： Timothy Miller ,  Vikram Singh ,  Ludo Godet ,  Christopher J. Leavitt

发明人： Timothy Miller ,  Vikram Singh ,  Ludo Godet ,  Christopher J. Leavitt

IPC分类号： C23C14/48 ,  C23C14/50 ,  C23C14/52 ,  H05F3/00

CPC分类号： H01J37/32935 ,  C23C14/48 ,  C23C14/542 ,  H01J37/32412

摘要： A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a generated plasma in a plasma chamber. The electrode is biased with negative voltage pulses at a potential that is higher than a potential of a substrate or cathode configured to receive ion implantation. The electrode is more negative to give the electrons generated as secondary electrons from the electrode sufficient energy to overcome the negative voltage of the high voltage sheath around the substrate thereby reaching the substrate. These electrons are accelerated toward the substrate to neutralize charge build-up on the substrate.

摘要翻译： 一种用于等离子体浸没离子注入电介质基板的控制装置，其包括设置在等离子体室中产生的等离子体之上的电极。 电极以比被配置为接收离子注入的衬底或阴极的电位高的电位的负电压脉冲偏置。 电极更为负，从而产生的二次电子产生的电子足够的能量来克服基底周围的高电压护套的负电压，从而到达衬底。 这些电子朝向衬底加速，以中和衬底上的电荷积聚。

公开(公告)号：US20110256732A1

公开(公告)日：2011-10-20

申请号：US12760847

申请日：2010-04-15

申请人： Helen Maynard ,  Vikram Singh ,  Svetlana Radovanov ,  Harold Persing

发明人： Helen Maynard ,  Vikram Singh ,  Svetlana Radovanov ,  Harold Persing

IPC分类号： H01L21/30 ,  C23C14/48

CPC分类号： H01L21/02274 ,  H01L21/2236 ,  H01L21/3065 ,  H01L29/66803

摘要： A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.

摘要翻译： 提供等离子体处理方法。 等离子体处理方法包括使用脉冲功率等离子体的余辉进行保形加工。 在余辉期间，等电场线跟随工件表面的轮廓，允许以各种入射角度，特别是非平面表面引入离子。 在本公开的另一方面，压片可在等离子体余辉期间被正向偏压以将负离子吸引到工件。 可以执行各种适形处理步骤，例如植入，蚀刻和沉积。

公开(公告)号：US07820533B2

公开(公告)日：2010-10-26

申请号：US11676069

申请日：2007-02-16

申请人： Timothy Miller ,  Vikram Singh

发明人： Timothy Miller ,  Vikram Singh

IPC分类号： H01L21/26

CPC分类号： H01L21/2236 ,  H01J37/32412 ,  H01J37/32706

摘要： A method of multi-step plasma doping a substrate includes igniting a plasma from a process gas. A first plasma condition is established for performing a first plasma doping step. The substrate is biased so that ions in the plasma having the first plasma condition impact a surface of the substrate thereby exposing the substrate to a first dose. The first plasma condition transitions to a second plasma condition. The substrate is biased so that ions in the plasma having the second plasma condition impact the surface of the substrate thereby exposing the substrate to a second dose. The first and second plasma conditions are chosen so that the first and second doses combine to achieve a predetermined distribution of dose across at least a portion of the substrate.

摘要翻译： 多级等离子体掺杂衬底的方法包括从处理气体点燃等离子体。 建立第一等离子体条件用于执行第一等离子体掺杂步骤。 衬底被偏置，使得具有第一等离子体状态的等离子体中的离子影响衬底的表面，从而将衬底暴露于第一剂量。 第一等离子体条件转变到第二等离子体条件。 衬底被偏置，使得具有第二等离子体状态的等离子体中的离子冲击衬底的表面，从而将衬底暴露于第二剂量。 选择第一和第二等离子体条件使得第一和第二剂量组合以实现在衬底的至少一部分上的预定剂量分布。

公开(公告)号：US20100159120A1

公开(公告)日：2010-06-24

申请号：US12341574

申请日：2008-12-22

申请人： Joseph P. Dzengeleski ,  George M. Gammel ,  Bernard G. Lindsay ,  Vikram Singh

发明人： Joseph P. Dzengeleski ,  George M. Gammel ,  Bernard G. Lindsay ,  Vikram Singh

IPC分类号： C23C14/48 ,  B05C11/00

CPC分类号： H01J37/32935

摘要： An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing.

摘要翻译： 离子均匀性监测装置位于等离子体处理室内，并且包括位于室内的工件上方并远离工件的多个传感器。 传感器被配置为检测从暴露于等离子体处理的工件的表面发射的二次电子的数量。 每个传感器输出与检测到的二次电子成比例的电流信号。 电流比较器电路输出由多个电流信号中的每一个产生的经处理的信号。 在等离子体处理期间从工件发射的二次电子的检测表示跨工件表面的均匀性特征，并且可以在原位和在线等离子体处理期间进行。

公开(公告)号：US07737013B2

公开(公告)日：2010-06-15

申请号：US12255181

申请日：2008-10-21

申请人： Heyun Yin ,  George D. Papasouliotis ,  Vikram Singh

发明人： Heyun Yin ,  George D. Papasouliotis ,  Vikram Singh

IPC分类号： H01L21/00

CPC分类号： H01L21/76846 ,  H01L21/76849 ,  H01L21/76867

摘要： A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.

摘要翻译： 第一种和第二种被植入到可以是铜的衬底的导体中。 可以顺序地或至少部分地同时植入第一种和第二种。 通过第二种物质的存在来防止第一种在基底导体内的扩散。 在一个具体实例中，第一种是硅，第二种是氮，尽管其它组合是可能的。

公开(公告)号：US20100098851A1

公开(公告)日：2010-04-22

申请号：US12254496

申请日：2008-10-20

申请人： Shigemi MURAKAWA ,  Vikram Singh ,  George Papasouliotis ,  Joseph C. Olson ,  Paul J. Murphy ,  Gary E. Dickerson

发明人： Shigemi MURAKAWA ,  Vikram Singh ,  George Papasouliotis ,  Joseph C. Olson ,  Paul J. Murphy ,  Gary E. Dickerson

IPC分类号： C23C16/44 ,  C23C16/54

CPC分类号： C23C16/45544

摘要： Techniques for atomic layer deposition (ALD) are disclosed. In one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas.

摘要翻译： 公开了原子层沉积技术（ALD）。 在一个特定的示例性实施例中，这些技术可以被实现为包括堆叠配置中的多个反应器的ALD系统，其中每个反应器包括用于保持目标晶片的晶片保持部分，耦合到多个反应器的气体组件， 被配置为向所述多个反应器中的至少一个提供至少一个气体，以及联接到所述多个反应器并被配置为从所述多个反应器中的所述至少一个反应器排出所述至少一种气体的排气组件。 气体组件还可以包括联接到第一气体入口，第二气体入口和第三气体入口中的每一个的阀组件，其中阀组件构造成选择性地释放第一气体，第二气体， 和第三气体。