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公开(公告)号：US20090110808A1
公开(公告)日：2009-04-30
申请号：US11877826
申请日：2007-10-24
CPC分类号： H01L31/022425 , H01L31/056 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a method of making back side contacts and back surface fields in photovoltaic devices such as silicon solar cells. According to one aspect, the process of the present invention is a non-contact process, overcoming many of the problems of the prior art. According to certain aspects, molten aluminum is used to form the contact regions as opposed to the screen printing process of the prior art. According to additional aspects, the process can be used to form the distributed point contacts and localized back surface fields for dielectric passivated back surface. According to still further aspects, molten aluminum spray and/or atomization is used for the back side metallization.
摘要翻译： 本发明提供了在诸如硅太阳能电池的光电器件中制造背面接触和背面场的方法。 根据一个方面，本发明的方法是克服现有技术的许多问题的非接触方法。 根据某些方面，与现有技术的丝网印刷方法相反，使用熔融铝来形成接触区域。 根据另外的方面，该方法可以用于形成电介质钝化后表面的分布点接触和局部后表面场。 根据另外的方面，熔融铝喷雾和/或雾化用于背面金属化。
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2.发明申请公开(公告)号：US20080142763A1
公开(公告)日：2008-06-19
申请号：US11610049
申请日：2006-12-13
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a method of recrystallizing a silicon sheet, and in particular recrystallizing a small grained silicon sheet to improve material properties such as grain size and orientation. According to one aspect, the method includes using rapid thermal processing (RTP) to melt and recrystallize one or more entire silicon sheet(s) in one heating sequence. According to another aspect, the method includes directionally controlling a temperature drop across the thickness of the sheet so as to facilitate the production of a small number of nuclei in the melted material and their growth into large grains. According to a further aspect, the invention includes a re-crystallization chamber in an overall process flow that enables high-throughput processing of silicon sheets having desired properties for applications such as photovoltaic modules.
摘要翻译： 本发明提供了一种使硅片再结晶的方法，特别是重结晶小晶粒硅片以改善诸如晶粒尺寸和取向的材料性能。 根据一个方面，该方法包括使用快速热处理（RTP）在一个加热顺序中熔融和重结晶一个或多个整个硅片。 根据另一方面，该方法包括定向地控制跨越板的厚度的温度降，以便于在熔融材料中产生少量的核并且其生长成大的晶粒。 根据另一方面，本发明包括在整个工艺流程中的再结晶室，其能够对具有用于诸如光伏模块的应用的所需性能的硅片进行高通量处理。
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公开(公告)号：US07846762B2
公开(公告)日：2010-12-07
申请号：US12234848
申请日：2008-09-22
IPC分类号： H01L21/00
CPC分类号： H01L21/02532 , H01L21/02667 , H01L31/02167 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention provide a method for forming an emitter region in a crystalline silicon substrate and passivating the surface thereof by depositing a doped amorphous silicon layer onto the crystalline silicon substrate and thermally annealing the crystalline silicon substrate while oxidizing the surface thereof. In one embodiment, the deposited film is completely converted to oxide. In another embodiment, the doped amorphous silicon layer deposited onto the crystalline silicon substrate is converted into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon substrate upon which the amorphous silicon was initially deposited during emitter formation. In one embodiment, at least a portion of the converted crystalline silicon is further converted into silicon dioxide during the emitter surface passivation.
摘要翻译： 本发明的实施方式提供了一种在晶体硅衬底中形成发射极区域并通过在晶体硅衬底上沉积掺杂的非晶硅层并使晶体硅衬底氧化其表面进行热退火而钝化其表面的方法。 在一个实施方案中，沉积的膜完全转化为氧化物。 在另一个实施例中，沉积到晶体硅衬底上的掺杂非晶硅层被转换成具有与在发射极形成期间最初沉积非晶硅的下面的晶体硅衬底相同的晶粒结构和晶体取向的晶体硅。 在一个实施例中，在发射极表面钝化期间，转化的晶体硅的至少一部分进一步转化成二氧化硅。
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4.发明申请Directional Solid Phase Crystallization of Thin Amorphous Silicon for Solar Cell Applications 失效用于太阳能电池应用的薄无定形硅的定向固相结晶公开(公告)号：US20110021008A1
公开(公告)日：2011-01-27
申请号：US12507761
申请日：2009-07-22
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02573 , H01L21/02609 , H01L31/068 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521 , Y10T117/10
摘要： Embodiments of the present invention provide a method for converting a doped amorphous silicon layer deposited onto a crystalline silicon substrate into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon substrate upon which the amorphous silicon was initially deposited. Additional embodiments of the present invention provide depositing a dielectric passivation layer onto the amorphous silicon layer prior to the conversion. A temperature gradient is provided at a temperature and for a time period sufficient to provide a desired p-n junction depth and dopant profile.
摘要翻译： 本发明的实施例提供了一种将沉积在晶体硅衬底上的掺杂非晶硅层转换成具有与初始沉积非晶硅的下面的晶体硅衬底相同的晶粒结构和晶体取向的晶体硅的方法。 本发明的另外的实施例提供了在转换之前在非晶硅层上沉积介电钝化层。 在足以提供期望的p-n结深度和掺杂剂分布的温度和时间段提供温度梯度。
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公开(公告)号：US20100323503A1
公开(公告)日：2010-12-23
申请号：US12872272
申请日：2010-08-31
IPC分类号： H01L21/22
CPC分类号： H01L21/02532 , H01L21/02667 , H01L31/02167 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention provide a method for forming an emitter region in a crystalline silicon substrate and passivating the surface thereof by depositing a doped amorphous silicon layer onto the crystalline silicon substrate and thermally annealing the crystalline silicon substrate while oxidizing the surface thereof. In one embodiment, the deposited film is completely converted to oxide. In another embodiment, the doped amorphous silicon layer deposited onto the crystalline silicon substrate is converted into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon substrate upon which the amorphous silicon was initially deposited during emitter formation. In one embodiment, at least a portion of the converted crystalline silicon is further converted into silicon dioxide during the emitter surface passivation.
摘要翻译： 本发明的实施方式提供了一种在晶体硅衬底中形成发射极区域并通过在晶体硅衬底上沉积掺杂的非晶硅层并使晶体硅衬底氧化其表面进行热退火而钝化其表面的方法。 在一个实施方案中，沉积的膜完全转化为氧化物。 在另一个实施例中，沉积到晶体硅衬底上的掺杂非晶硅层被转换成具有与在发射极形成期间最初沉积非晶硅的下面的晶体硅衬底相同的晶粒结构和晶体取向的晶体硅。 在一个实施例中，在发射极表面钝化期间，转化的晶体硅的至少一部分进一步转化成二氧化硅。
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公开(公告)号：US20100075485A1
公开(公告)日：2010-03-25
申请号：US12234848
申请日：2008-09-22
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02667 , H01L31/02167 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention provide a method for forming an emitter region in a crystalline silicon substrate and passivating the surface thereof by depositing a doped amorphous silicon layer onto the crystalline silicon substrate and thermally annealing the crystalline silicon substrate while oxidizing the surface thereof. In one embodiment, the deposited film is completely converted to oxide. In another embodiment, the doped amorphous silicon layer deposited onto the crystalline silicon substrate is converted into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon substrate upon which the amorphous silicon was initially deposited during emitter formation. In one embodiment, at least a portion of the converted crystalline silicon is further converted into silicon dioxide during the emitter surface passivation.
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7.发明授权公开(公告)号：US07569462B2
公开(公告)日：2009-08-04
申请号：US11610049
申请日：2006-12-13
IPC分类号： H01L21/36
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a method of recrystallizing a silicon sheet, and in particular recrystallizing a small grained silicon sheet to improve material properties such as grain size and orientation. According to one aspect, the method includes using rapid thermal processing (RTP) to melt and recrystallize one or more entire silicon sheet(s) in one heating sequence. According to another aspect, the method includes directionally controlling a temperature drop across the thickness of the sheet so as to facilitate the production of a small number of nuclei in the melted material and their growth into large grains. According to a further aspect, the invention includes a re-crystallization chamber in an overall process flow that enables high-throughput processing of silicon sheets having desired properties for applications such as photovoltaic modules.
摘要翻译： 本发明提供了一种使硅片再结晶的方法，特别是重结晶小晶粒硅片以改善诸如晶粒尺寸和取向的材料性能。 根据一个方面，该方法包括使用快速热处理（RTP）在一个加热顺序中熔融和重结晶一个或多个整个硅片。 根据另一方面，该方法包括定向地控制跨越板的厚度的温度降，以便于在熔融材料中产生少量的核并且其生长成大的晶粒。 根据另一方面，本发明包括在整个工艺流程中的再结晶室，其能够对具有用于诸如光伏模块的应用的所需性能的硅片进行高通量处理。
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公开(公告)号：US08163330B2
公开(公告)日：2012-04-24
申请号：US11877826
申请日：2007-10-24
IPC分类号： B05D5/12
CPC分类号： H01L31/022425 , H01L31/056 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a method of making back side contacts and back surface fields in photovoltaic devices such as silicon solar cells. According to one aspect, the process of the present invention is a non-contact process, overcoming many of the problems of the prior art. According to certain aspects, molten aluminum is used to form the contact regions as opposed to the screen printing process of the prior art. According to additional aspects, the process can be used to form the distributed point contacts and localized back surface fields for dielectric passivated back surface. According to still further aspects, molten aluminum spray and/or atomization is used for the back side metallization.
摘要翻译： 本发明提供了在诸如硅太阳能电池的光电器件中制造背面接触和背面场的方法。 根据一个方面，本发明的方法是克服现有技术的许多问题的非接触方法。 根据某些方面，与现有技术的丝网印刷方法相反，使用熔融铝来形成接触区域。 根据另外的方面，该方法可以用于形成电介质钝化后表面的分布点接触和局部后表面场。 根据另外的方面，熔融铝喷雾和/或雾化用于背面金属化。
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9.发明授权Directional solid phase crystallization of thin amorphous silicon for solar cell applications 失效用于太阳能电池应用的薄非晶硅的定向固相结晶公开(公告)号：US07981778B2
公开(公告)日：2011-07-19
申请号：US12507761
申请日：2009-07-22
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02573 , H01L21/02609 , H01L31/068 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521 , Y10T117/10
摘要： Embodiments of the present invention provide a method for converting a doped amorphous silicon layer deposited onto a crystalline silicon substrate into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon substrate upon which the amorphous silicon was initially deposited. Additional embodiments of the present invention provide depositing a dielectric passivation layer onto the amorphous silicon layer prior to the conversion. A temperature gradient is provided at a temperature and for a time period sufficient to provide a desired p-n junction depth and dopant profile.
摘要翻译： 本发明的实施例提供了一种将沉积在晶体硅衬底上的掺杂非晶硅层转换成具有与初始沉积非晶硅的下面的晶体硅衬底相同的晶粒结构和晶体取向的晶体硅的方法。 本发明的另外的实施例提供了在转换之前在非晶硅层上沉积介电钝化层。 在足以提供期望的p-n结深度和掺杂剂分布的温度和时间段提供温度梯度。
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公开(公告)号：US20120219841A1
公开(公告)日：2012-08-30
申请号：US13402724
申请日：2012-02-22
申请人： Hooman Bolandi , Mahendra C. Orilall , Victor Pebenito , Karl M. Brown , Michael C. Kutney , Connie P. Wang , Robert Z. Bachrach
发明人： Hooman Bolandi , Mahendra C. Orilall , Victor Pebenito , Karl M. Brown , Michael C. Kutney , Connie P. Wang , Robert Z. Bachrach
CPC分类号： C23C26/00 , H01M2/162 , H01M2/1686 , H01M4/0404 , H01M4/0419
摘要： A spray module for depositing an electro-active material over a flexible conductive substrate is provided. The spray module comprises a first heated roller for heating and transferring the flexible conductive substrate, a second heated roller for heating and transferring the flexible conductive substrate, a first spray dispenser positioned adjacent to the first heated roller for depositing electro-active material onto the flexible conductive substrate as the flexible conductive substrate is heated by the first heated roller, and a second spray dispenser positioned adjacent to the second heated roller for depositing electro-active material over the flexible conductive substrate as the flexible conductive substrate is heated by the second heated roller.
摘要翻译： 提供了一种用于在柔性导电基底上沉积电活性材料的喷射模块。 喷射模块包括用于加热和转移柔性导电基底的第一加热辊，用于加热和转移柔性导电基底的第二加热辊，邻近第一加热辊设置的第一喷射分配器，用于将电活性材料沉积到柔性导电基底上 作为柔性导电基板的导电基板被第一加热辊加热，以及邻近第二加热辊设置的第二喷射分配器，用于在柔性导电基板被第二加热辊加热时在柔性导电基板上沉积电活性材料 。
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