公开(公告)号：US10957372B2

公开(公告)日：2021-03-23

申请号：US16782209

申请日：2020-02-05

Applicant: VIRGINIA COMMONWEALTH UNIVERSITY

Inventor： Jayasimha Atulasimha ,  Dhritiman Bhattcaharya ,  Md Mamun Al-Rashid

IPC: G11C11/16 ,  G11C11/56

Abstract: A fixed magnetic skyrmion in a memory or Boolean logic or non-Boolean computing element is reversibly switched or switchable (1) with only an electric field and without a magnetic field or spin current; and (2) using voltage control of magnetic anisotropy (VCMA) to reduce the spin current needed to switch the skyrmion. Some embodiments switch between four states: two skyrmion states and two ferromagnetic states. Other embodiments switch between two states which are both skyrmionic, in which case the switching process may use ferromagnetic intermediate states, or both ferromagnetic, in which case the switching process may use skyrmionic intermediate states, or between a Skyrmion and ferromagnetic state. Boolean and non-Boolean logic devices are also provided which are based on these switching methods.

公开(公告)号：US10593389B2

公开(公告)日：2020-03-17

申请号：US16081553

申请日：2017-03-01

Applicant: VIRGINIA COMMONWEALTH UNIVERSITY

Inventor： Jayasimha Atulasimha ,  Dhritiman Bhattcaharya ,  Md Mamun Al-Rashid

IPC: G11C11/16 ,  G11C11/56

Abstract: A fixed magnetic skyrmion in a memory or Boolean logic or non-Boolean computing element is reversibly switched or switchable (1) with only an electric field and without a magnetic field or spin current; and (2) using voltage control of magnetic anisotropy (VCMA) to reduce the spin current needed to switch the skyrmion. Some embodiments switch between four states: two skyrmion states and two ferromagnetic states. Other embodiments switch between two states which are both skyrmionic, in which case the switching process may use ferromagnetic intermediate states, or both ferromagnetic, in which case the switching process may use skyrmionic intermediate states, or between a Skyrmion and ferromagnetic state. Boolean and non-Boolean logic devices are also provided which are based on these switching methods.

公开(公告)号：US20160141333A1

公开(公告)日：2016-05-19

申请号：US14546393

申请日：2014-11-18

Applicant: Virginia Commonwealth University

Inventor： Supriyo Bandyopadhyay ,  Jayasimha Atulasimha ,  Ayan Kumar Biswas

IPC: H01L27/22 ,  G11C11/16 ,  H01L41/047 ,  H01L41/08 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/22 ,  G11C11/2275 ,  G11C11/54 ,  G11C2013/0095 ,  H01L41/047 ,  H01L41/0805 ,  H01L43/02 ,  H01L43/08

Abstract: Memory cells, non-volatile logic gates, and combinations thereof have magneto-tunneling junctions (MTJs) which are switched using potential differences across a piezoelectric layer in elastic contact with a magnetostrictive nanomagnet of an MTJ. One or more pairs of electrodes are arranged about the MTJ for supplying voltage across the piezoelectric layer for switching. A permanent magnetic field may be employed to change the positions of the stable magnetic orientations of the magnetostrictive nanomagnet. Exemplary memory cells and universal non-volatile logic gates show dramatically improved performance characteristics, particularly with respect to energy dissipation and error-resilience, over existing methods and architectures for switching MTJs such as spin transfer torque (STT) techniques.

Abstract translation: 存储单元，非易失性逻辑门及其组合具有使用与MTJ的磁致伸缩纳米磁体弹性接触的压电层上的电位差来切换的磁隧道结（MTJ）。 围绕MTJ布置一对或多对电极，用于在压电层两端提供电压用于切换。 永久磁场可用于改变磁致伸缩纳米磁体的稳定磁取向的位置。 示例性存储器单元和通用非易失性逻辑门显示出显着改进的性能特性，特别是关于能量耗散和错误恢复性的现有方法和结构，用于切换MTJ，例如自旋传递转矩（STT）技术。

公开(公告)号：US20200211612A1

公开(公告)日：2020-07-02

申请号：US16782209

申请日：2020-02-05

Applicant: VIRGINIA COMMONWEALTH UNIVERSITY

Inventor： Jayasimha Atulasimha ,  Dhritiman Bhattcaharya ,  Md Mamun Al-Rashid

IPC: G11C11/16 ,  G11C11/56

Abstract: A fixed magnetic skyrmion in a memory or Boolean logic or non-Boolean computing element is reversibly switched or switchable (1) with only an electric field and without a magnetic field or spin current; and (2) using voltage control of magnetic anisotropy (VCMA) to reduce the spin current needed to switch the skyrmion. Some embodiments switch between four states: two skyrmion states and two ferromagnetic states. Other embodiments switch between two states which are both skyrmionic, in which case the switching process may use ferromagnetic intermediate states, or both ferromagnetic, in which case the switching process may use skyrmionic intermediate states, or between a Skyrmion and ferromagnetic state. Boolean and non-Boolean logic devices are also provided which are based on these switching methods.

公开(公告)号：US20190074044A1

公开(公告)日：2019-03-07

申请号：US16081553

申请日：2017-03-01

Applicant: VIRGINIA COMMONWEALTH UNIVERSITY

Inventor： Jayasimha Atulasimha ,  Dhritiman Bhattcaharya ,  Md Mamun Al-Rashid

IPC: G11C11/16 ,  G11C11/56

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/5607

Abstract: A fixed magnetic skyrmion in a memory or Boolean logic or non-Boolean computing element is reversibly switched or switchable (1) with only an electric field and without a magnetic field or spin current; and (2) using voltage control of magnetic anisotropy (VCMA) to reduce the spin current needed to switch the skyrmion. Some embodiments switch between four states: two skyrmion states and two ferromagnetic states. Other embodiments switch between two states which are both skyrmionic, in which case the switching process may use ferromagnetic intermediate states, or both ferromagnetic, in which case the switching process may use skyrmionic intermediate states, or between a Skyrmion and ferromagnetic state. Boolean and non-Boolean logic devices are also provided which are based on these switching methods.

公开(公告)号：US09379162B2

公开(公告)日：2016-06-28

申请号：US14546393

申请日：2014-11-18

Applicant: Virginia Commonwealth University

Inventor： Supriyo Bandyopadhyay ,  Jayasimha Atulasimha ,  Ayan Kumar Biswas

IPC: G11C11/00 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L41/047 ,  H01L41/08 ,  G11C11/16

CPC classification number: H01L27/222 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/22 ,  G11C11/2275 ,  G11C11/54 ,  G11C2013/0095 ,  H01L41/047 ,  H01L41/0805 ,  H01L43/02 ,  H01L43/08

Abstract: Memory cells, non-volatile logic gates, and combinations thereof have magneto-tunneling junctions (MTJs) which are switched using potential differences across a piezoelectric layer in elastic contact with a magnetostrictive nanomagnet of an MTJ. One or more pairs of electrodes are arranged about the MTJ for supplying voltage across the piezoelectric layer for switching. A permanent magnetic field may be employed to change the positions of the stable magnetic orientations of the magnetostrictive nanomagnet. Exemplary memory cells and universal non-volatile logic gates show dramatically improved performance characteristics, particularly with respect to energy dissipation and error-resilience, over existing methods and architectures for switching MTJs such as spin transfer torque (STT) techniques.

Abstract translation: 存储单元，非易失性逻辑门及其组合具有使用与MTJ的磁致伸缩纳米磁体弹性接触的压电层上的电位差来切换的磁隧道结（MTJ）。 围绕MTJ布置一对或多对电极，用于在压电层两端提供电压用于切换。 永久磁场可用于改变磁致伸缩纳米磁体的稳定磁取向的位置。 示例性存储器单元和通用非易失性逻辑门显示出显着改进的性能特性，特别是关于能量耗散和错误恢复性的现有方法和结构，用于切换MTJ，例如自旋传递转矩（STT）技术。