公开(公告)号：US20160141333A1

公开(公告)日：2016-05-19

申请号：US14546393

申请日：2014-11-18

Applicant: Virginia Commonwealth University

Inventor： Supriyo Bandyopadhyay ,  Jayasimha Atulasimha ,  Ayan Kumar Biswas

IPC: H01L27/22 ,  G11C11/16 ,  H01L41/047 ,  H01L41/08 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/22 ,  G11C11/2275 ,  G11C11/54 ,  G11C2013/0095 ,  H01L41/047 ,  H01L41/0805 ,  H01L43/02 ,  H01L43/08

Abstract: Memory cells, non-volatile logic gates, and combinations thereof have magneto-tunneling junctions (MTJs) which are switched using potential differences across a piezoelectric layer in elastic contact with a magnetostrictive nanomagnet of an MTJ. One or more pairs of electrodes are arranged about the MTJ for supplying voltage across the piezoelectric layer for switching. A permanent magnetic field may be employed to change the positions of the stable magnetic orientations of the magnetostrictive nanomagnet. Exemplary memory cells and universal non-volatile logic gates show dramatically improved performance characteristics, particularly with respect to energy dissipation and error-resilience, over existing methods and architectures for switching MTJs such as spin transfer torque (STT) techniques.

Abstract translation: 存储单元，非易失性逻辑门及其组合具有使用与MTJ的磁致伸缩纳米磁体弹性接触的压电层上的电位差来切换的磁隧道结（MTJ）。 围绕MTJ布置一对或多对电极，用于在压电层两端提供电压用于切换。 永久磁场可用于改变磁致伸缩纳米磁体的稳定磁取向的位置。 示例性存储器单元和通用非易失性逻辑门显示出显着改进的性能特性，特别是关于能量耗散和错误恢复性的现有方法和结构，用于切换MTJ，例如自旋传递转矩（STT）技术。

公开(公告)号：US09379162B2

公开(公告)日：2016-06-28

申请号：US14546393

申请日：2014-11-18

Applicant: Virginia Commonwealth University

Inventor： Supriyo Bandyopadhyay ,  Jayasimha Atulasimha ,  Ayan Kumar Biswas

IPC: G11C11/00 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L41/047 ,  H01L41/08 ,  G11C11/16

CPC classification number: H01L27/222 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/22 ,  G11C11/2275 ,  G11C11/54 ,  G11C2013/0095 ,  H01L41/047 ,  H01L41/0805 ,  H01L43/02 ,  H01L43/08

Abstract: Memory cells, non-volatile logic gates, and combinations thereof have magneto-tunneling junctions (MTJs) which are switched using potential differences across a piezoelectric layer in elastic contact with a magnetostrictive nanomagnet of an MTJ. One or more pairs of electrodes are arranged about the MTJ for supplying voltage across the piezoelectric layer for switching. A permanent magnetic field may be employed to change the positions of the stable magnetic orientations of the magnetostrictive nanomagnet. Exemplary memory cells and universal non-volatile logic gates show dramatically improved performance characteristics, particularly with respect to energy dissipation and error-resilience, over existing methods and architectures for switching MTJs such as spin transfer torque (STT) techniques.

Abstract translation: 存储单元，非易失性逻辑门及其组合具有使用与MTJ的磁致伸缩纳米磁体弹性接触的压电层上的电位差来切换的磁隧道结（MTJ）。 围绕MTJ布置一对或多对电极，用于在压电层两端提供电压用于切换。 永久磁场可用于改变磁致伸缩纳米磁体的稳定磁取向的位置。 示例性存储器单元和通用非易失性逻辑门显示出显着改进的性能特性，特别是关于能量耗散和错误恢复性的现有方法和结构，用于切换MTJ，例如自旋传递转矩（STT）技术。

公开(公告)号：US12217890B2

公开(公告)日：2025-02-04

申请号：US17440974

申请日：2020-03-20

Applicant: VIRGINIA COMMONWEALTH UNIVERSITY

Inventor： Supriyo Bandyopadhyay

IPC: H01F10/32 ,  H01P3/08 ,  H03H9/25 ,  H04L27/12 ,  H04M1/03 ,  B82Y25/00

Abstract: Embodiments generally relate to subwavelength antennas and, more particularly, extreme subwavelength antennas with high radiation efficiency. One embodiment and its derivatives achieve the objective of an extreme subwavelength dual acoustic and electromagnetic antenna by using spin-orbit torque in an array of nanomagnets.

公开(公告)号：US08946678B2

公开(公告)日：2015-02-03

申请号：US13803185

申请日：2013-03-14

Applicant: Virginia Commonwealth University

Inventor： Supriyo Bandyopadhyay ,  Saumil Bandyopadhyay ,  Pratik Agnihotri

IPC: H01L31/00 ,  H01L31/0352 ,  H01L31/18 ,  H01L31/09 ,  H01L31/101 ,  H01L31/109 ,  H01L21/02

CPC classification number: H01L31/035236 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02603 ,  H01L21/02639 ,  H01L31/035227 ,  H01L31/09 ,  H01L31/101 ,  H01L31/109 ,  H01L31/18 ,  H01L31/1836 ,  Y02E10/50

Abstract: Room temperature IR and UV photodetectors are provided by electrochemical self-assembly of nanowires. The detectivity of such IR detectors is up to ten times better than the state of the art. Broad peaks are observed in the room temperature absorption spectra of 10-nm diameter nanowires of CdSe and ZnS at photon energies close to the bandgap energy, indicating that the detectors are frequency selective and preferably detect light of specific frequencies. Provided is a photodetector comprising: an aluminum substrate; a layer of insulator disposed on the aluminum substrate and comprising an array of columnar pores; a plurality of semiconductor nanowires disposed within the pores and standing vertically relative to the aluminum substrate; a layer of nickel disposed in operable communication with one or more of the semiconductor nanowires; and wire leads in operable communication with the aluminum substrate and the layer of nickel for connection with an electrical circuit.

Abstract translation: 室温IR和UV光电探测器由纳米线的电化学自组装提供。 这种IR检测器的检测能力比现有技术高出十倍。 在接近带隙能量的光子能量下，在CdSe和ZnS的10nm直径纳米线的室温吸收光谱中观察到宽峰，表明检测器是频率选择性的，并且优选地检测特定频率的光。 提供一种光电检测器，包括：铝基板; 设置在铝基板上并包括柱状孔阵列的绝缘层; 多个半导体纳米线设置在孔内并相对于铝基板垂直放置; 布置成与一个或多个半导体纳米线可操作地连通的镍层; 以及与铝基板和用于与电路连接的镍层可操作地连通的导线。

公开(公告)号：US20130240837A1

公开(公告)日：2013-09-19

申请号：US13803185

申请日：2013-03-14

Applicant: VIRGINIA COMMONWEALTH UNIVERSITY

Inventor： Supriyo Bandyopadhyay ,  Saumil Bandyopadhyay ,  Pratik Agnihotri

IPC: H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/035236 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02603 ,  H01L21/02639 ,  H01L31/035227 ,  H01L31/09 ,  H01L31/101 ,  H01L31/109 ,  H01L31/18 ,  H01L31/1836 ,  Y02E10/50

Abstract: Room temperature IR and UV photodetectors are provided by electrochemical self-assembly of nanowires. The detectivity of such IR detectors is up to ten times better than the state of the art. Broad peaks are observed in the room temperature absorption spectra of 10-nm diameter nanowires of CdSe and ZnS at photon energies close to the bandgap energy, indicating that the detectors are frequency selective and preferably detect light of specific frequencies. Provided is a photodetector comprising: an aluminum substrate; a layer of insulator disposed on the aluminum substrate and comprising an array of columnar pores; a plurality of semiconductor nanowires disposed within the pores and standing vertically relative to the aluminum substrate; a layer of nickel disposed in operable communication with one or more of the semiconductor nanowires; and wire leads in operable communication with the aluminum substrate and the layer of nickel for connection with an electrical circuit.

Abstract translation: 室温IR和UV光电探测器由纳米线的电化学自组装提供。 这种IR检测器的检测能力比现有技术高出十倍。 在接近带隙能量的光子能量下，在CdSe和ZnS的10nm直径纳米线的室温吸收光谱中观察到宽峰，表明检测器是频率选择性的，并且优选地检测特定频率的光。 提供一种光电检测器，包括：铝基板; 设置在铝基板上并包括柱状孔阵列的绝缘层; 多个半导体纳米线设置在孔内并相对于铝基板垂直放置; 布置成与一个或多个半导体纳米线可操作地连通的镍层; 以及与铝基板和用于与电路连接的镍层可操作地连通的导线。