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    Target acquisition and overlay metrology based on two diffracted orders imaging
    1.
    发明授权
    Target acquisition and overlay metrology based on two diffracted orders imaging 有权
    基于两个衍射成像的目标获取和覆盖计量

    公开(公告)号：US07528953B2

    公开(公告)日：2009-05-05

    申请号：US11363755

    申请日：2006-02-27

    申请人： Aviv Frommer ,  Vladimir Levinski ,  Mark D. Smith ,  Jeffrey Byers ,  Chris A. Mack ,  Michael E. Adel

    发明人： Aviv Frommer ,  Vladimir Levinski ,  Mark D. Smith ,  Jeffrey Byers ,  Chris A. Mack ,  Michael E. Adel

    IPC分类号： G01B11/00 ,  G06K9/00

    CPC分类号： G03F9/7049 ,  G03F7/70633 ,  G03F9/7088

    摘要： In one embodiment, a system includes a beam generator for directing at least one incident beam having a wavelength λ towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, λ, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images.

    摘要翻译： 在一个实施例中，系统包括用于将具有波长λ的至少一个入射光束朝向具有特定间距p的结构的周期性目标的光束发生器。 响应于至少一个入射光束，多个输出光束从周期性靶标散射。 该系统还包括用于仅从目标通过第一和第二输出光束的成像透镜系统。 成像系统被适配成使得捕获的光束λ和间距之间的角度间隔被选择为使得第一和第二输出光束形成正弦图像。 该系统还包括用于对正弦图像或图像进行成像的传感器，以及控制器，用于使光束发生器将至少一个入射光束引向周期性目标或目标，并用于分析正弦图像或图像。

    Feature printability optimization by optical tool
    2.
    发明授权
    Feature printability optimization by optical tool 失效
    通过光学工具优化可打印性优化

    公开(公告)号：US07566517B1

    公开(公告)日：2009-07-28

    申请号：US11271207

    申请日：2005-11-09

    申请人： Michael E. Adel ,  Chris A. Mack

    发明人： Michael E. Adel ,  Chris A. Mack

    IPC分类号： G03F1/00

    CPC分类号： G03F7/70625 ,  G03F1/36 ,  G03F1/44 ,  G03F1/68

    摘要： Methods and apparatus, including computer program products, implementing and using techniques for optimizing feature printability on a semiconductor wafer. A reticle with a quasi-periodic structure is provided. The quasi-periodic structure includes several elements that each contribute to the printed feature to be printed on the wafer. Each element exhibits a slight variation in a reticle feature characteristic compared to an adjacent other element in the quasi-periodic structure. The reticle with the quasi-periodic structure is used to print several printed features on the semiconductor wafer. Each printed feature corresponds to a specific element in the quasi-periodic structure. A metrology process is performed on the semiconductor wafer to generate a signature for each of the printed features. The signature is used to determine an optimum reticle feature characteristic that results in an optimum printed feature.

    摘要翻译： 方法和装置，包括计算机程序产品，用于优化半导体晶片上的特征可印刷性的实现和使用技术。 提供了具有准周期性结构的掩模版。 准周期结构包括几个元件，每个元件都有助于印刷在晶片上的印刷特征。 与准周期结构中相邻的另一个元素相比，每个元件在掩模版特征特征上表现出轻微的变化。 具有准周期结构的掩模版用于在半导体晶片上印刷多个印刷特征。 每个打印的特征对应于准周期结构中的特定元素。 在半导体晶片上进行计量过程，以产生每个印刷特征的签名。 该签名用于确定导致最佳印刷特征的最佳掩模版特征。

    Systems and methods for mitigating variances on a patterned wafer using a prediction model
    3.
    发明授权
    Systems and methods for mitigating variances on a patterned wafer using a prediction model 有权
    使用预测模型减轻图案化晶片上的方差的系统和方法

    公开(公告)号：US07297453B2

    公开(公告)日：2007-11-20

    申请号：US11394900

    申请日：2006-03-31

    申请人： Sterling G. Watson ,  Ady Levy ,  Chris A. Mack ,  Stanley E. Stokowski ,  Zain K. Saidin

    发明人： Sterling G. Watson ,  Ady Levy ,  Chris A. Mack ,  Stanley E. Stokowski ,  Zain K. Saidin

    IPC分类号： G03C5/00 ,  G03F9/00

    CPC分类号： G03F1/84 ,  G03F1/36 ,  Y10S430/146

    摘要： Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.

    摘要翻译： 公开了用于减轻图案化晶片上的方差（例如，临界尺寸方差）的系统和方法。 通常，使用一个或多个掩模版制造和/或晶片处理模型预测图案化晶片的变化。 预测的方差用于修改用于产生图案化晶片的掩模版的所选透明部分。 在具体实现中，诸如毫微微秒激光器的光束在多个嵌入位置被施加到掩模版，并且光束被配置为在掩模版的透明材料内形成改变的光学特性的特定体积 在指定位置。 在掩模版的特定位置处产生的这些掩模版体积在这样的特定位置处导致通过掩模版的光透射或剂量的变化量，以便减轻使用修改的掩模版图案化的晶片上识别的方差。

    Photolithography exposure tool and method for in situ photoresist measurments and exposure control
    8.
    发明授权
    Photolithography exposure tool and method for in situ photoresist measurments and exposure control 失效
    用于原位光刻胶测量和曝光控制的光刻曝光工具和方法

    公开(公告)号：US5363171A

    公开(公告)日：1994-11-08

    申请号：US98914

    申请日：1993-07-29

    申请人： Chris A. Mack

    发明人： Chris A. Mack

    IPC分类号： G03F7/20 ,  G03B27/74 ,  G03B27/42 ,  G03B27/80

    CPC分类号： G03F7/70558 ,  G03F7/7085

    摘要： An apparatus and method is provided for measuring photoresist parameters in situ is disclosed. Transmission and reflectivity detectors are used in a lithographic exposure tool to obtain in situ absorption parameters and reflectivity data. The absorption parameters and reflectivity data are used in a feedback control system that controls the exposure dose used in the lithographic tool.

    摘要翻译： 公开了一种用于原位测量光刻胶参数的装置和方法。 传输和反射率检测器用于光刻曝光工具以获得原位吸收参数和反射率数据。 吸收参数和反射率数据用于控制光刻工具中使用的曝光剂量的反馈控制系统。