Target acquisition and overlay metrology based on two diffracted orders imaging
    1.
    发明授权
    Target acquisition and overlay metrology based on two diffracted orders imaging 有权
    基于两个衍射成像的目标获取和覆盖计量

    公开(公告)号:US07528953B2

    公开(公告)日:2009-05-05

    申请号:US11363755

    申请日:2006-02-27

    IPC分类号: G01B11/00 G06K9/00

    摘要: In one embodiment, a system includes a beam generator for directing at least one incident beam having a wavelength λ towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, λ, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images.

    摘要翻译: 在一个实施例中,系统包括用于将具有波长λ的至少一个入射光束朝向具有特定间距p的结构的周期性目标的光束发生器。 响应于至少一个入射光束,多个输出光束从周期性靶标散射。 该系统还包括用于仅从目标通过第一和第二输出光束的成像透镜系统。 成像系统被适配成使得捕获的光束λ和间距之间的角度间隔被选择为使得第一和第二输出光束形成正弦图像。 该系统还包括用于对正弦图像或图像进行成像的传感器,以及控制器,用于使光束发生器将至少一个入射光束引向周期性目标或目标,并用于分析正弦图像或图像。

    Diffraction order controlled overlay metrology
    2.
    发明申请
    Diffraction order controlled overlay metrology 有权
    衍射顺序控制重叠度量

    公开(公告)号:US20060197951A1

    公开(公告)日:2006-09-07

    申请号:US11363755

    申请日:2006-02-27

    IPC分类号: G01B11/00

    摘要: In one embodiment, a system for imaging an acquisition target or an overlay or alignment semiconductor target is disclosed. The system includes a beam generator for directing at least one incident beam having a wavelength λ towards a periodic target having structures with a specific pitch p. A plurality of output beams are scattered from the periodic target in response to the at least one incident beam. The system further includes an imaging lens system for passing only a first and a second output beam from the target. The imaging system is adapted such that the angular separation between the captured beams, λ, and the pitch are selected to cause the first and second output beams to form a sinusoidal image. The system also includes a sensor for imaging the sinusoidal image or images, and a controller for causing the beam generator to direct the at least one incident beam towards the periodic target or targets, and for analyzing the sinusoidal image or images. In one application the detector detects a sinusoidal image of an acquisition target with the same pitch as the designed target and the controller analyzes the pitch of the sinusoidal image compared to design data to determine whether the target has been successfully acquired. In a second application a first and second periodic target that each have a specific pitch p are imaged so that the detector detects a first sinusoidal image of the first target and a second sinusoidal image of the second target and the controller analyzes the first and second sinusoidal image to determine whether the first and second targets have an overlay or alignment error.

    摘要翻译: 在一个实施例中,公开了一种用于对采集目标或覆盖或对准半导体目标进行成像的系统。 该系统包括用于将具有波长λ的至少一个入射光束朝向具有特定间距p的结构的周期性目标引导的光束发生器。 响应于至少一个入射光束,多个输出光束从周期性靶标散射。 该系统还包括用于仅从目标通过第一和第二输出光束的成像透镜系统。 成像系统被适配成使得捕获的光束λ和间距之间的角度间隔被选择为使得第一和第二输出光束形成正弦图像。 该系统还包括用于对正弦图像或图像进行成像的传感器,以及控制器,用于使光束发生器将至少一个入射光束引向周期性目标或目标,并用于分析正弦图像或图像。 在一个应用中,检测器以与设计目标相同的间距检测采集目标的正弦图像,并且控制器分析与设计数据相比的正弦图像的间距,以确定目标是否已被成功获取。 在第二应用中,每个具有特定间距p的第一和第二周期性目标成像,使得检测器检测第一目标的第一正弦图像和第二目标的第二正弦图像,并且控制器分析第一和第二正弦曲线 图像以确定第一和第二目标是否具有覆盖或对齐错误。

    Computer-implemented method and carrier medium configured to generate a set of process parameters and/or a list of potential causes of deviations for a lithography process
    3.
    发明申请
    Computer-implemented method and carrier medium configured to generate a set of process parameters and/or a list of potential causes of deviations for a lithography process 有权
    计算机实现的方法和载体介质被配置为产生一组工艺参数和/或光刻工艺的偏差的潜在原因的列表

    公开(公告)号:US20060089741A1

    公开(公告)日:2006-04-27

    申请号:US11246761

    申请日:2005-10-07

    IPC分类号: G06F19/00

    摘要: A computer-implemented method and a carrier medium adapted to improve lithographic processes are provided. In some embodiments, the computer-implemented method and carrier medium may be used for identifying potential causes of lithography process failure or drift. In addition or alternatively, the computer-implemented method and carrier medium may be adapted to generate a set of process parameter values for a lithography process based upon both critical dimension and overlay effect analyses of process parameter value variations. In some cases, the set of process parameter values may be selected to collectively minimize the number critical dimension and overlay variation errors produced within an image fabricated from the lithography process.

    摘要翻译: 提供了一种适用于改善光刻工艺的计算机实现的方法和载体介质。 在一些实施例中,计算机实现的方法和载体介质可以用于识别光刻处理故障或漂移的潜在原因。 另外或替代地,计算机实现的方法和载体介质可以适于基于过程参数值变化的临界尺寸和覆盖效应分析来生成用于光刻工艺的一组工艺参数值。 在一些情况下,可以选择一组过程参数值以集合地最小化在由光刻工艺制造的图像内产生的数量临界尺寸和覆盖变化误差。

    Computer-implemented method and carrier medium configured to generate a set of process parameters for a lithography process
    4.
    发明授权
    Computer-implemented method and carrier medium configured to generate a set of process parameters for a lithography process 有权
    计算机实现的方法和载体介质被配置为生成用于光刻工艺的一组工艺参数

    公开(公告)号:US06968253B2

    公开(公告)日:2005-11-22

    申请号:US10431133

    申请日:2003-05-07

    IPC分类号: G03F7/20 G06F19/00

    摘要: A computer-implemented method and a carrier medium adapted to generate a set of process parameter values for a lithography process based upon both critical dimension and overlay effect analyses of process parameter value variations is provided. In some cases, the computer-implemented method and a carrier medium may be configured to select a set of process parameter values to collectively minimize the number critical dimension and overlay variation errors produced within an image fabricated from the lithography process.

    摘要翻译: 提供了一种计算机实现的方法和适用于基于过程参数值变化的临界尺寸和覆盖效应分析来生成用于光刻工艺的一组工艺参数值的载体介质。 在一些情况下,计算机实现的方法和载体介质可以被配置为选择一组过程参数值以共同地最小化在从光刻工艺制造的图像内产生的数量临界尺寸和叠加变化误差。

    IMMERSION LITHOGRAPHY USING HAFNIUM-BASED NANOPARTICLES
    5.
    发明申请
    IMMERSION LITHOGRAPHY USING HAFNIUM-BASED NANOPARTICLES 失效
    使用基于铌的纳米粒子进行沉积光刻

    公开(公告)号:US20090213346A1

    公开(公告)日:2009-08-27

    申请号:US12035963

    申请日:2008-02-22

    IPC分类号: G03B27/42 G03C5/04

    摘要: Method, apparatus, and composition of matter suited for use with, for example, immersion lithography. The composition of matter includes hafnium dioxide nanoparticles having diameters less than or equal to about 15 nanometers. The apparatus includes the composition of matter, a light source, a platform for supporting a work piece, and a lens element. The method includes providing a light source, providing a lens element between the light source and a work piece, providing the composition of matter between the lens element and the work piece, and exposing the work piece to light provided by the light source by passing light from the light source through the lens element and the composition of matter to the work piece.

    摘要翻译: 适用于例如浸没光刻的物质的方法,装置和组成。 物质的组成包括直径小于或等于约15纳米的二氧化铪纳米颗粒。 该装置包括物质的组成,光源,用于支撑工件的平台和透镜元件。 该方法包括提供光源,在光源和工件之间提供透镜元件,在透镜元件和工件之间提供物质的组成,并将工件暴露于由光源提供的光中,通过光 从光源通过透镜元件和物质的组成到工件。

    Immersion lithography using hafnium-based nanoparticles
    8.
    发明授权
    Immersion lithography using hafnium-based nanoparticles 失效
    使用铪基纳米粒子进行浸渍光刻

    公开(公告)号:US08134684B2

    公开(公告)日:2012-03-13

    申请号:US12035963

    申请日:2008-02-22

    IPC分类号: G03B27/42

    摘要: Method, apparatus, and composition of matter suited for use with, for example, immersion lithography. The composition of matter includes hafnium dioxide nanoparticles having diameters less than or equal to about 15 nanometers. The apparatus includes the composition of matter, a light source, a platform for supporting a work piece, and a lens element. The method includes providing a light source, providing a lens element between the light source and a work piece, providing the composition of matter between the lens element and the work piece, and exposing the work piece to light provided by the light source by passing light from the light source through the lens element and the composition of matter to the work piece.

    摘要翻译: 适用于例如浸没光刻的物质的方法,装置和组成。 物质的组成包括直径小于或等于约15纳米的二氧化铪纳米颗粒。 该装置包括物质的组成,光源,用于支撑工件的平台和透镜元件。 该方法包括提供光源,在光源和工件之间提供透镜元件,在透镜元件和工件之间提供物质的组成,并将工件暴露于由光源通过光提供的光 从光源通过透镜元件和物质的组成到工件。