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    Copper oxide removal techniques
    1.
    发明授权
    Copper oxide removal techniques 有权
    氧化铜去除技术

    公开(公告)号：US08758638B2

    公开(公告)日：2014-06-24

    申请号：US13104314

    申请日：2011-05-10

    申请人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    发明人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    IPC分类号： H01L21/3065 ,  H01L21/302

    CPC分类号： H01L21/02074 ,  H01L21/76883

    摘要： A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.

    摘要翻译： 提供了一种从铜中除去氧化铜和包含半导体芯片的结构的方法。 可以通过化学机械平面化（CMP）对包含铜和电介质的结构进行平面化，并通过除去氧化铜和CMP残留物的方法进行处理。 在氢（H2）气体和紫外线（UV）环境中退火除去氧化铜，脉冲氨等离子体去除CMP残留物。

    COPPER OXIDE REMOVAL TECHNIQUES
    2.
    发明申请
    COPPER OXIDE REMOVAL TECHNIQUES 有权
    铜氧化物去除技术

    公开(公告)号：US20120289049A1

    公开(公告)日：2012-11-15

    申请号：US13104314

    申请日：2011-05-10

    申请人： WEIFENG YE ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    发明人： WEIFENG YE ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    IPC分类号： H01L21/3065 ,  H01L21/302

    CPC分类号： H01L21/02074 ,  H01L21/76883

    摘要： A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.

    摘要翻译： 提供了一种从铜中除去氧化铜和包含半导体芯片的结构的方法。 可以通过化学机械平面化（CMP）对包含铜和电介质的结构进行平面化，并通过除去氧化铜和CMP残留物的方法进行处理。 在氢（H2）气体和紫外线（UV）环境中退火除去氧化铜，脉冲氨等离子体去除CMP残留物。

    METHOD TO INCREASE SILICON NITRIDE TENSILE STRESS USING NITROGEN PLASMA IN-SITU TREATMENT AND EX-SITU UV CURE
    3.
    发明申请
    METHOD TO INCREASE SILICON NITRIDE TENSILE STRESS USING NITROGEN PLASMA IN-SITU TREATMENT AND EX-SITU UV CURE 审中-公开
    使用氮等离子体原位处理和超临界紫外线固化法增加氮化硅拉伸应力的方法

    公开(公告)号：US20120196450A1

    公开(公告)日：2012-08-02

    申请号：US13365226

    申请日：2012-02-02

    申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

    发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

    IPC分类号： H01L21/3105 ,  H01L21/318 ,  H01L21/316

    CPC分类号： H01L21/0234 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

    摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

    摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据一些实施例，沉积的氮化硅膜暴露于等离子体和紫外（UV）辐射的固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化循环的整合方法形成氮化硅膜，以在底层凸起特征的尖角处保留膜的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

    Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
    4.
    发明授权
    Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure 有权
    使用氮等离子体原位处理和非原位UV固化来增加氮化硅拉伸应力的方法

    公开(公告)号：US08138104B2

    公开(公告)日：2012-03-20

    申请号：US11762590

    申请日：2007-06-13

    申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

    发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

    IPC分类号： H01L21/469

    CPC分类号： H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

    摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

    摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

    Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films
    6.
    发明授权
    Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films 有权
    低温等离子体增强了保形硅氮化硅和氮化硅膜的化学气相沉积

    公开(公告)号：US08586487B2

    公开(公告)日：2013-11-19

    申请号：US13353063

    申请日：2012-01-18

    申请人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    发明人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    IPC分类号： H01L21/469

    CPC分类号： H01L21/02167 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/823807 ,  H01L29/7843

    摘要： Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20° C. to about 480° C. by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer.

    摘要翻译： 提供了在基板上在低温下形成共形氮化硅膜的方法和装置。 形成氮化硅层的方法包括进行沉积循环，包括使处理气体混合物流入其中具有衬底的处理室，其中处理气体混合物包含具有不稳定硅到氮，硅到碳或氮的前体气体分子， 碳键，在约20℃至约480℃的温度下活化前体气体，通过优先断开不稳定键以提供沿着前体气体分子的一个或多个反应位点，在基底上形成前体材料层，其中 活化的前体气体分子与一个或多个反应位点处的衬底上的表面结合，并对前体材料层进行等离子体处理工艺以形成共形氮化硅层。

    LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF CONFORMAL SILICON CARBON NITRIDE AND SILICON NITRIDE FILMS
    7.
    发明申请
    LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF CONFORMAL SILICON CARBON NITRIDE AND SILICON NITRIDE FILMS 有权
    低温等离子体增强化学气相沉积法合成硅氮化硅和氮化硅膜

    公开(公告)号：US20130183835A1

    公开(公告)日：2013-07-18

    申请号：US13353063

    申请日：2012-01-18

    申请人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    发明人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

    IPC分类号： H01L21/318

    CPC分类号： H01L21/02167 ,  C23C16/345 ,  C23C16/56 ,  H01L21/0217 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/823807 ,  H01L29/7843

    摘要： Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20° C. to about 480° C. by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer.

    摘要翻译： 提供了在基板上在低温下形成共形氮化硅膜的方法和装置。 形成氮化硅层的方法包括进行沉积循环，包括使处理气体混合物流入其中具有衬底的处理室，其中处理气体混合物包含具有不稳定硅到氮，硅到碳或氮的前体气体分子， 碳键，在约20℃至约480℃的温度下活化前体气体，通过优先断开不稳定键以提供沿着前体气体分子的一个或多个反应位点，在基底上形成前体材料层，其中 活化的前体气体分子与一个或多个反应位点处的衬底上的表面结合，并对前体材料层进行等离子体处理工艺以形成共形氮化硅层。