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    Nonvolatile memory device
    4.
    发明授权
    Nonvolatile memory device 有权
    非易失性存储器件

    公开(公告)号：US08848433B2

    公开(公告)日：2014-09-30

    申请号：US13795620

    申请日：2013-03-12

    申请人： Kabushiki Kaisha Toshiba

    发明人： Daisuke Saida ,  Minoru Amano ,  Naoharu Shimomura

    IPC分类号： G11C11/00 ,  G11C11/16

    CPC分类号： G11C11/1675 ,  G11C11/161

    摘要： According to one embodiment, a nonvolatile memory device includes: a magnetic memory element and a control unit. The magnetic memory element includes a stacked body, and a first and a second stacked units. The first stacked unit includes a first and second ferromagnetic layers and a first nonmagnetic layer provided between the first and the second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer and a nonmagnetic tunneling barrier layer stacked with the third ferromagnetic layer. The control unit is configured to implement a first operation of setting the magnetic memory element to be in a first state. The first operation includes a first preliminary operation of applying a first pulse voltage; and a first setting operation of applying a second pulse voltage having a second rising time to the magnetic memory element after the first preliminary operation.

    摘要翻译： 根据一个实施例，非易失性存储器件包括：磁存储元件和控制单元。 磁存储元件包括层叠体，以及第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二堆叠单元包括与第三铁磁层堆叠的第三铁磁层和非磁性隧道势垒层。 控制单元被配置为实现将磁存储元件设置为处于第一状态的第一操作。 第一操作包括施加第一脉冲电压的第一初步操作; 以及在第一初步操作之后将具有第二上升时间的第二脉冲电压施加到磁存储元件的第一设置操作。

    MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME 有权
    磁记忆及其制造方法

    公开(公告)号：US20140206106A1

    公开(公告)日：2014-07-24

    申请号：US14223802

    申请日：2014-03-24

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Shigeki Takahashi ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Minoru Amano ,  Hiroaki Yoda

    IPC分类号： H01L43/12

    CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.

    摘要翻译： 根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。 磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。 所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。 第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

    Magnetic memory device
    6.
    发明授权
    Magnetic memory device 有权
    磁存储器件

    公开(公告)号：US09466350B2

    公开(公告)日：2016-10-11

    申请号：US14848258

    申请日：2015-09-08

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Akiyuki Murayama ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Minoru Amano ,  Takao Ochiai

    IPC分类号： G11C11/16

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1695 ,  G11C2213/15

    摘要： According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a magnetoresistive effect element having first and second terminals, the first terminal being electrically connected to the first interconnect, a diode having first and second terminals, the first terminal being electrically connected to the first terminal of the magnetoresistive effect element, the second terminal being electrically connected to the second terminal of the magnetoresistive effect element, and a transistor having source and drain terminals, one of the source and drain terminals being electrically connected to the second terminal of the magnetoresistive effect element and the second terminal of the diode, the other of the source and drain terminals being electrically connected to the second interconnect.

    摘要翻译： 根据一个实施例，磁存储器件包括第一互连，第二互连，具有第一和第二端子的磁阻效应元件，第一端子电连接到第一互连件，具有第一和第二端子的二极管，第一端子 与磁阻效应元件的第一端子电连接，第二端子电连接到磁阻效应元件的第二端子，以及具有源极和漏极端子的晶体管，源极和漏极端子中的一个电连接到 磁阻效应元件的第二端子和二极管的第二端子，源极和漏极端子中的另一个电连接到第二互连件。

    Magnetic memory and method of manufacturing the same
    9.
    发明授权
    Magnetic memory and method of manufacturing the same 有权
    磁存储器及其制造方法

    公开(公告)号：US09224944B2

    公开(公告)日：2015-12-29

    申请号：US14223802

    申请日：2014-03-24

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Shigeki Takahashi ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Minoru Amano ,  Hiroaki Yoda

    IPC分类号： H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

    CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.

    摘要翻译： 根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。 磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。 所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。 第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

    Magnetoresistive effect element having an underlayer and a side wall layer that contain scandium
    10.
    发明授权
    Magnetoresistive effect element having an underlayer and a side wall layer that contain scandium 有权
    具有含有钪的底层和侧壁层的磁阻效应元件

    公开(公告)号：US09508926B2

    公开(公告)日：2016-11-29

    申请号：US14637254

    申请日：2015-03-03

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Eiji Kitagawa ,  Minoru Amano ,  Megumi Yakabe ,  Hiroaki Maekawa

    IPC分类号： H01L43/02 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12 ,  H01L43/00 ,  H01L43/10 ,  H01L27/22

    CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive effect element includes a recording layer having magnetic anisotropy and a variable magnetization direction, a reference layer having magnetic anisotropy and an invariable magnetization direction, an intermediate layer between the recording layer and the reference layer, an underlayer containing scandium (Sc) and disposed on a surface side of the recording layer opposite to a surface side on which the recording layer is disposed, and a side wall layer containing an oxide of Sc and disposed on side surfaces of the recording layer and the intermediate layer.

    摘要翻译： 磁阻效应元件包括具有磁各向异性和可变磁化方向的记录层，具有磁各向异性和不变磁化方向的参考层，记录层和参考层之间的中间层，含有钪（Sc）的底层， 在记录层的与设置有记录层的表面侧相反的表面侧，以及包含Sc的氧化物并设置在记录层和中间层的侧表面上的侧壁层。