摘要:
Lithography tools and substrates are aligned by generating geometric interference patterns using optical gratings associated with the lithography tools and substrates. In some embodiments, the relative position between a substrate and lithography tool is adjusted to cause at least one geometric shape to have a predetermined size or shape representing acceptable alignment. In additional embodiments, Moiré patterns that exhibit varying sensitivity are used to align substrates and lithography tools. Furthermore, lithography tools and substrates are aligned by causing radiation to interact with optical gratings positioned between the lithography tools and substrates. Lithography tools include an optical grating configured to generate a portion of an interference pattern that exhibits a sensitivity that increases as the relative position between the tools and a substrate moves towards a predetermined alignment position.
摘要:
Lithography tools and substrates are aligned by generating geometric interference patterns using optical gratings associated with the lithography tools and substrates. In some embodiments, the relative position between a substrate and lithography tool is adjusted to cause at least one geometric shape to have a predetermined size or shape representing acceptable alignment. In additional embodiments, Moiré patterns that exhibit varying sensitivity are used to align substrates and lithography tools. Furthermore, lithography tools and substrates are aligned by causing radiation to interact with optical gratings positioned between the lithography tools and substrates. Lithography tools include an optical grating configured to generate a portion of an interference pattern that exhibits a sensitivity that increases as the relative position between the tools and a substrate moves towards a predetermined alignment position.
摘要:
Various embodiments of the present invention are directed to three-dimensional crossbar arrays. In one aspect of the present invention, a three-dimensional crossbar array includes a plurality of crossbar arrays, a first demultiplexer, a second demultiplexer, and a third demultiplexer. Each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, and a third layer of nanowires overlaying the second layer of nanowires. The first demultiplexer is configured to address nanowires in the first layer of nanowires of each crossbar array, the second demultiplexer is configured to address nanowires in the second layer of nanowires of each crossbar array, and the third demultiplexer is configured to supply a signal to the nanowires in the third layer of nanowires of each crossbar array.
摘要:
Various embodiments of the present invention are directed to three-dimensional crossbar arrays. In one aspect of the present invention, a three-dimensional crossbar array includes a plurality of crossbar arrays, a first demultiplexer, a second demultiplexer, and a third demultiplexer. Each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, and a third layer of nanowires overlaying the second layer of nanowires. The first demultiplexer is configured to address nanowires in the first layer of nanowires of each crossbar array, the second demultiplexer is configured to address nanowires in the second layer of nanowires of each crossbar array, and the third demultiplexer is configured to supply a signal to the nanowires in the third layer of nanowires of each crossbar array.
摘要:
An apparatus and related methods for facilitating surface-enhanced Raman spectroscopy (SERS) is described. A SERS-active structure near which a plurality of analyte molecules is disposed is periodically deformed at an actuation frequency. A synchronous measuring device synchronized with the actuation frequency receives Raman radiation scattered from the analyte molecules and generates therefrom at least one Raman signal measurement.
摘要:
An apparatus for forming a pattern in a curable material carried on a substrate having one or more components with coefficients of thermal expansion that are substantially equal to the coefficient of thermal expansion of the substrate.
摘要:
A contact lithography apparatus and a method use one or both of spacers and a mesa to facilitate pattern transfer. The apparatus and the method include one or both of a spacer that provides a spaced apart orientation of lithographic elements, such as a patterning tool and a substrate, when in mutual contact with the spacer and a mesa between the patterning tool and the substrate. The mesa supports a contact surface of one or both of the mold and the substrate. One or both of the spacers and the mesa may be non-uniform. One or more of the patterning tool, the substrate and the spacer is deformable, such that deformation thereof facilitates the pattern transfer.
摘要:
A contact lithography apparatus and a method use one or both of spacers and a mesa to facilitate pattern transfer. The apparatus and the method include one or both of a spacer that provides a spaced apart orientation of lithographic elements, such as a patterning tool and a substrate, when in mutual contact with the spacer and a mesa between the patterning tool and the substrate. The mesa supports a contact surface of one or both of the mold and the substrate. One or both of the spacers and the mesa may be non-uniform. One or more of the patterning tool, the substrate and the spacer is deformable, such that deformation thereof facilitates the pattern transfer.