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公开(公告)号:US20080073774A1
公开(公告)日:2008-03-27
申请号:US11566242
申请日:2006-12-04
申请人: Wen-Kun Yang , Dyi-Chung Hu , Chih-Ming Chen , Hsien-Wen Hsu
发明人: Wen-Kun Yang , Dyi-Chung Hu , Chih-Ming Chen , Hsien-Wen Hsu
IPC分类号: H01L23/04
CPC分类号: H01L23/5389 , H01L23/3135 , H01L23/49816 , H01L23/49833 , H01L24/19 , H01L24/82 , H01L24/97 , H01L2224/05001 , H01L2224/05008 , H01L2224/05026 , H01L2224/12105 , H01L2224/97 , H01L2924/00014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01094 , H01L2924/14 , H01L2924/181 , H01L2924/3511 , H01L2224/82 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要: A chip package including a multilayer substrate, an adhesive core layer and a chip is provided. The multilayer substrate has a plurality of material layers. The adhesive core layer is disposed on the multilayer substrate. The chip is disposed in the adhesive core layer. The chip has an active surface exposed outside the adhesive core layer. The chip includes a plurality of bonding pads disposed on the active surface and a plurality of metal conductive bodies electrically connected to the bonding pads respectively.
摘要翻译: 提供了包括多层基板,粘合芯层和芯片的芯片封装。 多层基板具有多个材料层。 粘合芯层设置在多层基板上。 芯片设置在粘合芯层中。 该芯片具有暴露在粘合芯层外的活性表面。 芯片包括设置在有源表面上的多个接合焊盘和分别与焊盘电连接的多个金属导电体。
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公开(公告)号:US11948899B2
公开(公告)日:2024-04-02
申请号:US17979793
申请日:2022-11-03
申请人: Dyi-Chung Hu
发明人: Dyi-Chung Hu
IPC分类号: H01L23/00
CPC分类号: H01L24/02 , H01L2224/02311 , H01L2224/02331 , H01L2224/02373 , H01L2924/16251
摘要: A semiconductor substrate structure including a first group of circuit structure and a second group of circuit structure is provided. The first group of circuit structure includes multiple first wiring layers and multiple first conductive connectors, and each of the first conductive connectors includes a conductive cap. The second group of circuit structure includes multiple second wiring layers and multiple second conductive connectors. The first group of circuit structure and the second group of circuit structure are electrically connected through bonding of the first conductive connectors and the second conductive connectors to form a multilayer redistribution structure. A manufacturing method of the semiconductor substrate structure is also provided.
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公开(公告)号:US11876291B2
公开(公告)日:2024-01-16
申请号:US17980536
申请日:2022-11-03
申请人: Dyi-Chung Hu
发明人: Dyi-Chung Hu
CPC分类号: H01Q1/50 , H01Q1/2283
摘要: A millimeter wave antenna module package structure includes a first group of circuit structure, a second group of circuit structure, and a plurality of joints. The first group of circuit structure includes at least one first circuit layer and a plurality of first conductive connectors, and the at least one first circuit layer includes an antenna pattern. The second group of circuit structure includes a plurality of second circuit layers and a plurality of second conductive connectors. The joints are disposed between the first group of circuit structure and the second group of circuit structure. The joints are connected to the first conductive connectors and the second conductive connectors, such that the first group of circuit structure is electrically connected to the second group of circuit structure to form a multi-layer redistribution structure. A manufacturing method of the millimeter wave antenna module package structure is also provided.
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公开(公告)号:US10964580B2
公开(公告)日:2021-03-30
申请号:US15374622
申请日:2016-12-09
申请人: Dyi-Chung Hu
发明人: Dyi-Chung Hu
IPC分类号: B32B3/02 , B32B9/00 , H01L21/02 , H01L21/683 , B32B9/04 , B32B15/04 , B32B17/06 , B32B3/30 , B32B15/01 , B32B15/18 , B32B15/20 , G03F7/20 , H01L21/027 , H01L21/288
摘要: At least one wafer is embedded in a carrier to eliminate or at least reduce edge effect. The wafer reconfiguration is designed to improve a quality not only for spin coating process but also for electric plating process. An edge bead is formed on top of the carrier instead of being formed on top of the wafer so that a full top surface of the wafer can be active to the fabrication of chips and therefore more chips are yielded for a single wafer. The backside of the wafer is not contaminated by the coating according to the present invention. Further, dummy circuits can be made on top of the carrier so that electric plating uniformity for full area of a wafer can be improved.
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公开(公告)号:US10395946B2
公开(公告)日:2019-08-27
申请号:US16177446
申请日:2018-11-01
申请人: Dyi-Chung Hu
发明人: Dyi-Chung Hu
IPC分类号: H01L23/49 , H01L21/48 , H01L21/56 , H01L21/683 , H01L23/498 , H01L23/00 , H01L25/065 , H01L25/00 , H01L23/538 , H01L23/31
摘要: A method for manufacturing an electronic package includes: forming a middle patterned conductive layer having a first surface, a second surface opposite to the first surface, and a plurality of middle conductive pads; forming a first redistribution circuitry on the first surface, wherein the first redistribution circuitry includes a first patterned conductive layer having a plurality of first conductive elements, each first conductive element has a first conductive via and pad that form a T-shaped section, and each first conductive via connects the corresponding middle conductive pad and is tapering; and forming a second redistribution circuitry on the second surface, wherein the second redistribution circuitry includes a second patterned conductive layer having a plurality of second conductive elements, each second conductive element has a second conductive via and pad that form an inversed T-shaped section, and each second conductive via connects the corresponding middle conductive pad and is tapering.
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公开(公告)号:US10304794B2
公开(公告)日:2019-05-28
申请号:US15694858
申请日:2017-09-04
申请人: Dyi-Chung Hu
发明人: Dyi-Chung Hu
IPC分类号: H01L23/00 , H01L23/498 , H01L23/538 , H01L21/78 , H01L23/28 , H05K1/11 , H01L21/683 , H01L23/31 , H01L21/56 , H01L25/065
摘要: A manufacturing method of an integrated circuit package including the following step is provided. A bottom redistribution layer according to IC design rule is fabricated. A top redistribution layer according to PCB design rule and using the first top pads as a starting point is fabricated. The bottom redistribution layer has a plurality of first bottom pads, a plurality of first top pads, at least one dielectric layer and a plurality of vias. Sides and the top of the bottom redistribution layer have interfaces with a lowermost dielectric layer of the top redistribution layer, a bottom surface of the lowermost dielectric layer opposite to the plurality of first top pads is coplanar with a bottom surface of the at least one dielectric layer opposite to the plurality of first top pads and surfaces of the plurality of first bottom pads exposed by the at least one dielectric layer.
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公开(公告)号:US10049995B2
公开(公告)日:2018-08-14
申请号:US15708142
申请日:2017-09-19
申请人: Dyi-Chung Hu
发明人: Dyi-Chung Hu
IPC分类号: H01L21/44 , H01L23/00 , H01L25/065
摘要: A bonding film has at least a left longitudinal branch, and a lower latitudinal branch; a first bonding area is configured in a first branch, and a second bonding area is configured in a second branch. A plurality of outer top metal pads and a plurality of inner top metal pads are exposed on a top surface within each bonding area. A central chip is configured in a central area of the bonding film and is electrically coupled to the inner top metal pad, and at least two peripheral chips are configured neighboring to the central chip and electrically coupled to the outer top metal pads. Each of the inner top metal pads is electrically coupled to a corresponding outer top metal pad through an embedded circuitry. The central chip communicates with the peripheral chips through the inner top metal pad, embedded circuitry, and outer top metal pad of the bonding film.
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公开(公告)号:US10002852B1
公开(公告)日:2018-06-19
申请号:US15380716
申请日:2016-12-15
申请人: Dyi-Chung Hu
发明人: Dyi-Chung Hu
IPC分类号: H01L21/02 , H01L25/065 , H01L23/00 , H01L23/31 , H01L25/00
摘要: A first integrated circuit (IC) package has a package substrate on bottom. The package substrate comprises a bottom redistribution circuitry configured according to printed circuit board (PCB) design rule and a top redistribution circuitry configured according to integrated circuit (IC) design rule. The first IC package has a plurality of top metal pads and a plurality of copper pillars configured on a top side according to IC design rule. A second IC package has a plurality of bottom metal pads configured according to IC design rule configured on a top side of the first IC package. The first IC package electrically couples to the second IC package through the plurality of copper pillars.
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公开(公告)号:US09691661B2
公开(公告)日:2017-06-27
申请号:US15073852
申请日:2016-03-18
申请人: Dyi-Chung Hu
发明人: Dyi-Chung Hu
CPC分类号: H01L21/78 , H01L21/6835 , H01L24/03 , H01L24/06 , H01L2221/68318 , H01L2221/68345 , H01L2221/68359 , H01L2224/02373 , H01L2224/0401 , H01L2224/06182
摘要: An IC package without using an interposer is disclosed to form a low profile IC package. A single redistribution layer is fabricated according to IC process. A plurality of bottom pads is formed on a bottom of the single redistribution layer adaptive for the IC package to mount onto a mother board. A plurality of top pads is formed on a top of the single redistribution layer. An IC chip mounts on the plurality of top pads. A first molding compound wraps the single redistribution layer on four sides; and a second molding compound embeds the IC chip on top of the redistribution layer.
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公开(公告)号:US09545776B2
公开(公告)日:2017-01-17
申请号:US14604883
申请日:2015-01-26
申请人: Dyi-Chung Hu
发明人: Dyi-Chung Hu
CPC分类号: H01L21/6835 , B32B3/02 , B32B3/30 , B32B9/00 , B32B9/04 , B32B15/012 , B32B15/018 , B32B15/04 , B32B15/18 , B32B15/20 , B32B17/06 , B32B17/061 , B32B2250/02 , B32B2255/00 , B32B2255/06 , B32B2255/26 , B32B2457/08 , B32B2457/14 , G03F7/2028 , H01L21/02282 , H01L21/0271 , H01L21/288 , H01L2224/27416
摘要: At least one water is embedded in a carrier to eliminate or at least reduce edge effect. The wafer reconfiguration is designed to improve a quality not only for spin coating process but also for electric plating process. An edge bead is formed on top of the carrier instead of being formed on top of the wafer so that a full top surface of the wafer can be active to the fabrication of chips and therefore more chips are yielded for a single wafer. The backside of the wafer is not contaminated by the coating according to the present invention. Further, dummy circuits can be made on top of the carrier so that electric plating uniformity for full area of a wafer can be improved.
摘要翻译: 至少一个水嵌入载体以消除或至少减少边缘效应。 晶圆重新配置旨在提高不仅用于旋涂工艺的质量,而且还可用于电镀工艺。 边缘焊道形成在载体的顶部上,而不是形成在晶片的顶部上,使得晶片的完整顶表面可以有助于制造芯片,因此为单个晶片产生更多的芯片。 晶片的背面不会被根据本发明的涂层污染。 此外,可以在载体的顶部上形成虚拟电路,从而可以提高晶片的整个面积的电镀均匀性。
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