公开(公告)号：USD537283S1

公开(公告)日：2007-02-27

申请号：US29241370

申请日：2005-10-26

申请人： Wen-Ta Tsai

设计人： Wen-Ta Tsai

公开(公告)号：US5496593A

公开(公告)日：1996-03-05

申请号：US333037

申请日：1994-11-01

申请人： Wen-Ta Tsai ,  Chong-Cheng Huang ,  Ju-Tung Lee

发明人： Wen-Ta Tsai ,  Chong-Cheng Huang ,  Ju-Tung Lee

IPC分类号： C23C24/10 ,  C23C26/02 ,  B05D3/06

CPC分类号： C23C26/02 ,  C23C24/103

摘要： A process for producing a nitrogen-alloyed stainless steel layer on steel by applying nitride containing mixed metal powder or stainless powder to the steel surface, and thereafter treating the steel with laser beams.

摘要翻译： 一种通过在钢表面上涂覆含有混合金属粉末或不锈钢粉末的氮化物，然后用激光束处理钢来制造氮合金不锈钢层的方法。

公开(公告)号：US06903441B2

公开(公告)日：2005-06-07

申请号：US10452566

申请日：2003-05-30

申请人： Chin Fa Wang ,  Wen-Ta Tsai ,  Yuan-Ping Joe

发明人： Chin Fa Wang ,  Wen-Ta Tsai ,  Yuan-Ping Joe

IPC分类号： H01L21/60 ,  H01L23/48 ,  H01L23/50 ,  H01L23/498 ,  H01L21/58

CPC分类号： H01L23/50 ,  H01L23/481 ,  H01L24/27 ,  H01L24/32 ,  H01L24/82 ,  H01L24/83 ,  H01L2224/2518 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/8319 ,  H01L2224/838 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10157 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/00

摘要： A semiconductor package and a fabrication method thereof are provided, in which a ground pad on a chip is electrically connected to a ground plane on a substrate by means of an electrically-conductive wall formed over a side surface of the chip and an electrically-conductive adhesive used for attaching the chip to the substrate. Therefore, a wire-bonding process is merely implemented for power pads and signal I/O (input/output) pads on the chip without having to form ground wires on the ground pads for electrical connection purposes. This benefit allows the use of a reduced number of bonding wires and simplifies wire arrangement or routability. And, a grounding path from the chip through the electrically-conductive wall and electrically-conductive adhesive to the substrate is shorter than the conventional one of using ground wires, thereby reducing a ground-bouncing effect and improving electrical performances of the semiconductor package.

摘要翻译： 提供一种半导体封装及其制造方法，其中芯片上的接地焊盘通过形成在芯片的侧表面上的导电壁电连接到基板上的接地平面，并且导电 用于将芯片附接到基板的粘合剂。 因此，仅针对芯片上的电源焊盘和信号I / O（输入/输出）焊盘实现引线接合工艺，而不必在接地焊盘上形成用于电连接目的的接地线。 这种优点允许使用减少数量的接合线并简化线布置或可布线性。 并且，从芯片通过导电壁和导电粘合剂到衬底的接地路径比使用接地线的传统接地线的接地路径短，从而降低了接地跳动效应并提高了半导体封装的电性能。

公开(公告)号：US06590279B1

公开(公告)日：2003-07-08

申请号：US09470515

申请日：1999-12-22

申请人： Chieh-Ping Huang ,  Lian-Cherng Chiang ,  Wen-Ta Tsai

发明人： Chieh-Ping Huang ,  Lian-Cherng Chiang ,  Wen-Ta Tsai

IPC分类号： H01L2302

CPC分类号： H01L24/27 ,  H01L23/49513 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83192 ,  H01L2224/85181 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2225/06562 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00015 ,  H01L2924/00012

摘要： A dual-chip integrated circuit package and a method for manufacturing such a dual-chip integrated circuit package are proposed, which can help prevent the occurrence of cracking and delamination in the chips and the occurrence of voids in the encapsulant during the manufacture process. The dual-chip integrated circuit package is constructed on a leadframe having a plurality of first leads and a plurality of second leads and at least a pair of support members between the first and second leads. Further, the dual-chip integrated circuit package includes at least one support member attached to the front side of the first integrated circuit chip for providing a support to the bonding pads on the second integrated circuit chip; the support member being not smaller in dimension than the area where the bonding pads on the second integrated circuit chip are located. An encapsulant is used for encapsulating the first integrated circuit chip, the second integrated circuit chip, the support members, and inner parts of the first and second leads of the leadframe. Since the support members can provide good support to the bonding pads on the second integrated circuit chip, it can help prevent the chips from being cracked during the manufacture process. The manufactured dual-chip integrated circuit package can be thus reliable in quality.

公开(公告)号：USD476495S1

公开(公告)日：2003-07-01

申请号：US29156456

申请日：2002-02-27

申请人： Wen-Ta Tsai

设计人： Wen-Ta Tsai

公开(公告)号：US5411770A

公开(公告)日：1995-05-02

申请号：US266046

申请日：1994-06-27

申请人： Wen-Ta Tsai ,  Ju-Tung Lee ,  Tai-Hwang Lai

发明人： Wen-Ta Tsai ,  Ju-Tung Lee ,  Tai-Hwang Lai

IPC分类号： C23C10/18 ,  C23C26/02 ,  C23C24/10

CPC分类号： C23C10/18 ,  C23C26/02

摘要： The surface of stainless steel can be hardened by coating a silicon nitride gel and then scanning by CO.sub.2 laser to form a surface alloy layer thereon. The thickness and hardness of the surface alloy layer are both uniform. The Vicker's hardness of the layer can be as high as 1200 Hv. This method can be operated in a common atmosphere or nitride atmosphere at normal pressure, therefore it is more economic than ion nitriding or plasma nitriding.

摘要翻译： 不锈钢表面可以通过涂覆氮化硅凝胶硬化，然后用CO 2激光扫描，在其上形成表面合金层。 表面合金层的厚度和硬度均匀。 Vicker的硬度可以高达1200 Hv。 该方法可以在普通气氛或常压氮化气氛下运行，因此比离子氮化或等离子体氮化更经济。

公开(公告)号：USD538075S1

公开(公告)日：2007-03-13

申请号：US29241368

申请日：2005-10-26

申请人： Wen-Ta Tsai

设计人： Wen-Ta Tsai

公开(公告)号：USD512574S1

公开(公告)日：2005-12-13

申请号：US29203821

申请日：2004-04-20

申请人： Wen-Ta Tsai

设计人： Wen-Ta Tsai

公开(公告)号：USD468140S1

公开(公告)日：2003-01-07

申请号：US29156454

申请日：2002-02-27

申请人： Wen-Ta Tsai

设计人： Wen-Ta Tsai

公开(公告)号：US06428849B1

公开(公告)日：2002-08-06

申请号：US09588216

申请日：2000-06-06

申请人： Wen-Ta Tsai ,  Hung-Wen Hsu

发明人： Wen-Ta Tsai ,  Hung-Wen Hsu

IPC分类号： C23C1628

CPC分类号： C23C12/02

摘要： The invention discloses a method for producing a nitrogen-silicon containing stainless steel layer on a metal. The method includes a pack cementation process involving the use of silicon nitride, silica and sodium fluoride as the source materials.

摘要翻译： 本发明公开了一种在金属上生产含氮硅不锈钢层的方法。 该方法包括使用氮化硅，二氧化硅和氟化钠作为源材料的包装胶结方法。