公开(公告)号：US20050121794A1

公开(公告)日：2005-06-09

申请号：US11026822

申请日：2004-12-29

申请人： Werner Juengling ,  Kirk Prall ,  Ravi Iyer ,  Gurtej Sandhu ,  Guy Blalock

发明人： Werner Juengling ,  Kirk Prall ,  Ravi Iyer ,  Gurtej Sandhu ,  Guy Blalock

IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/40

CPC分类号： H01L23/5222 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.

摘要翻译： 本发明包括在导电元件之间形成绝缘材料的方法。 在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。 另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。 在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。 在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

公开(公告)号：US06858526B2

公开(公告)日：2005-02-22

申请号：US09820468

申请日：2001-03-28

申请人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

发明人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/4763 ,  H01L21/302

CPC分类号： H01L23/5222 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.

摘要翻译： 本发明包括在导电元件之间形成绝缘材料的方法。 在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。 另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。 在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。 在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

公开(公告)号：US06812160B2

公开(公告)日：2004-11-02

申请号：US09976624

申请日：2001-10-12

申请人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

发明人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

IPC分类号： H01L2131

CPC分类号： H01L21/7682 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/24149 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/259 ,  H01L2924/00

摘要： Methods of forming insulating materials between conductive elements include forming a material adjacent a conductive electrical component comprising: partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. Other methods include forming a material between a pair of conductive electrical components comprising: forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. Some embodiments include an insulating material adjacent a conductive electrical component, such material comprising a matrix and at least one void within the matrix.

摘要翻译： 在导电元件之间形成绝缘材料的方法包括形成邻近导电电气部件的材料，该材料包括：部分蒸发物质以形成邻近导电电气部件的基体，所述基体在其内具有至少一个空隙。 其他方法包括在一对导电电气部件之间形成材料，包括：在一个质量块内形成一对导电的电气部件，并由该质量块的一大片分隔; 在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及使所述质量块的膨胀程度有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙。 一些实施例包括邻近导电电气部件的绝缘材料，这种材料包括基质和基质内的至少一个空隙。

公开(公告)号：US06333556B1

公开(公告)日：2001-12-25

申请号：US08947847

申请日：1997-10-09

申请人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

发明人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

IPC分类号： H01L23485

CPC分类号： H01L21/7682 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/24149 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/259 ,  H01L2924/00

摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.

摘要翻译： 本发明包括在导电元件之间形成绝缘材料的方法。 在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。 另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。 在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。 在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

公开(公告)号：US06313046B1

公开(公告)日：2001-11-06

申请号：US09115339

申请日：1998-07-14

申请人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

发明人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

IPC分类号： H01L2131

CPC分类号： H01L21/7682 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/24149 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/259 ,  H01L2924/00

摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.

摘要翻译： 本发明涵盖在导电元件之间形成绝缘材料的方法。 在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。 另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。 在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。 在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

公开(公告)号：US07262503B2

公开(公告)日：2007-08-28

申请号：US11026822

申请日：2004-12-29

申请人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

发明人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

IPC分类号： H01L23/48

CPC分类号： H01L23/5222 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/7682 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.

摘要翻译： 本发明包括在导电元件之间形成绝缘材料的方法。 在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。 另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。 在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。 在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

公开(公告)号：US06501179B2

公开(公告)日：2002-12-31

申请号：US09921861

申请日：2001-08-02

申请人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

发明人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

IPC分类号： H01L23485

CPC分类号： H01L21/7682 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/24149 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/259 ,  H01L2924/00

摘要： The invention encompasses methods of forming insulating materials between conductive elements. In one aspect, the invention includes a method of forming a material adjacent a conductive electrical component comprising: a) partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. In another aspect, the invention includes a method of forming a material between a pair of conductive electrical components comprising the following steps: a) forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; b) forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and c) vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. In another aspect, the invention includes an insulating material adjacent a conductive electrical component, the insulating material comprising a matrix and at least one void within the matrix. In another aspect, the invention includes an insulating region between a pair of conductive electrical components comprising: a) a support member between the conductive electrical components, the support member not comprising a conductive interconnect; and b) at least one void between the support member and each of the pair of conductive electrical components.

摘要翻译： 本发明包括在导电元件之间形成绝缘材料的方法。 在一个方面，本发明包括形成邻近导电电气部件的材料的方法，该方法包括：a）部分蒸发物质以形成邻近导电电气部件的基体，所述基质在其内具有至少一个空隙。 另一方面，本发明包括一种在一对导电电气部件之间形成材料的方法，包括以下步骤：a）在质量体内形成一对导电的电气部件，并由质量块的一部分分隔; b）在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及c）将所述物质的所述膨胀物蒸发至有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙的程度。 在另一方面，本发明包括与导电电气部件相邻的绝缘材料，所述绝缘材料包含基体和所述基体内的至少一个空隙。 在另一方面，本发明包括在一对导电电气部件之间的绝缘区域，包括：a）导电电气部件之间的支撑部件，所述支撑部件不包括导电互连; 以及b）所述支撑构件和所述一对导电电气部件中的每一个之间的至少一个空隙。

公开(公告)号：US07112542B2

公开(公告)日：2006-09-26

申请号：US10330719

申请日：2002-12-27

申请人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

发明人： Werner Juengling ,  Kirk D. Prall ,  Ravi Iyer ,  Gurtej S. Sandhu ,  Guy Blalock

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/76

CPC分类号： H01L21/7682 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02362 ,  H01L21/31695 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/24149 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/259 ,  H01L2924/00

摘要： Methods of forming insulating materials between conductive elements include forming a material adjacent a conductive electrical component comprising: partially vaporizing a mass to form a matrix adjacent the conductive electrical component, the matrix having at least one void within it. Other methods include forming a material between a pair of conductive electrical components comprising: forming a pair of conductive electrical components within a mass and separated by an expanse of the mass; forming at least one support member within the expanse of the mass, the support member not comprising a conductive interconnect; and vaporizing the expanse of the mass to a degree effective to form at least one void between the support member and each of the pair of conductive electrical components. Some embodiments include an insulating material adjacent a conductive electrical component, such material comprising a matrix and at least one void within the matrix.

摘要翻译： 在导电元件之间形成绝缘材料的方法包括形成邻近导电电气部件的材料，该材料包括：部分蒸发物质以形成邻近导电电气部件的基体，所述基体在其内具有至少一个空隙。 其他方法包括在一对导电电气部件之间形成材料，包括：在一个质量块内形成一对导电的电气部件，并由该质量块的一大片分隔; 在所述物体的宽度内形成至少一个支撑构件，所述支撑构件不包括导电互连; 以及使所述质量块的膨胀程度有效地在所述支撑构件和所述一对导电电气部件中的每一个之间形成至少一个空隙。 一些实施例包括邻近导电电气部件的绝缘材料，这种材料包括基质和基质内的至少一个空隙。

公开(公告)号：US5858865A

公开(公告)日：1999-01-12

申请号：US569838

申请日：1995-12-07

申请人： Werner Juengling ,  Kirk Prall ,  Gordon Haller ,  David Keller ,  Tyler Lowrey

发明人： Werner Juengling ,  Kirk Prall ,  Gordon Haller ,  David Keller ,  Tyler Lowrey

IPC分类号： H01L21/28 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/485 ,  H01L21/3205

CPC分类号： H01L27/10888 ,  H01L21/28 ,  H01L21/768 ,  H01L21/76897 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S438/978

摘要： Within an integrated circuit, a contact plug with a height not extending above the level of the gate/wordline nitride is nonetheless provided with a relatively large contact area or landing pad, significantly larger than the source/drain region to which the contact plug is electrically connected. Methods for producing the inventive contact plug include (1) use of a nitride facet etch, either (a) during a nitride spacer formation etch or (b) during a BPSG etch; (2) using at least one of (a) an isotropic photoresist etch or partial descum to narrow BPSG spacers above the gate/wordline nitride, and (b) a nitride step etch to etch the shoulder area of the gate/wordline nitride exposed by a BPSG etch; and (3) polishing a BPSG layer down to the top of a gate/wordline nitride before any doped polysilicon plug fill, masking for BPSG etch and performing a BPSG etch, etching the photoresist layer through a partial descum, and etching the shoulder area of the gate/wordline nitride exposed thereby.

摘要翻译： 在集成电路中，具有不延伸在栅极/字线氮化物的高度之上的高度的接触插塞仍然设置有相对较大的接触面积或着陆焊盘，其明显大于接触插塞电接触的源极/漏极区域 连接的。 用于制造本发明接触塞的方法包括（1）在氮化物间隔物形成蚀刻期间使用氮化物刻面蚀刻（a）或（b）在BPSG蚀刻期间; （2）使用（a）各向同性光致抗蚀剂蚀刻或部分除去中的至少一种来窄化栅极/字线氮化物之上的BPSG间隔区，以及（b）氮化物步骤蚀刻以蚀刻暴露于栅极/字线氮化物的肩部区域 BPSG蚀刻; 并且（3）在任何掺杂的多晶硅插塞填充之前将BPSG层向下抛光到栅极/字线氮化物的顶部，掩蔽用于BPSG蚀刻和执行BPSG蚀刻，通过部分除去蚀刻光致抗蚀剂层，并蚀刻 栅极/字线氮化物被曝光。

公开(公告)号：US06469389B2

公开(公告)日：2002-10-22

申请号：US09567649

申请日：2000-05-09

申请人： Werner Juengling ,  Kirk Prall ,  Gordon Haller ,  David Keller ,  Tyler Lowrey

发明人： Werner Juengling ,  Kirk Prall ,  Gordon Haller ,  David Keller ,  Tyler Lowrey

IPC分类号： H01L2348

CPC分类号： H01L27/10888 ,  H01L21/28 ,  H01L21/768 ,  H01L21/76897 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S438/978 ,  H01L2924/00

摘要： Within an integrated circuit, a contact plug with a height not extending above the level of the gate/wordline nitride is nonetheless provided with a relatively large contact area or landing pad, significantly larger than the source/drain region to which the contact plug is electrically connected. Methods for producing the inventive contact plug include (1) use of a nitride facet etch, either (a) during a nitride spacer formation etch or (b) during a BPSG etch; (2) using at least one of (a) an isotropic photoresist etch or partial descum to narrow BPSG spacers above the gate/wordline nitride, and (b) a nitride step etch to etch the shoulder area of the gate/wordline nitride exposed by a BPSG etch; and (3) polishing a BPSG layer down to the top of a gate/wordline nitride before any doped polysilicon plug fill, masking for BPSG etch and performing a BPSG etch, etching the photoresist layer through a partial descum, and etching the shoulder area of the gate/wordline nitride exposed thereby.

摘要翻译： 在集成电路中，具有不延伸在栅极/字线氮化物的高度之上的高度的接触插塞仍然设置有相对较大的接触面积或着陆焊盘，其明显大于接触插塞电接触的源极/漏极区域 连接的。 用于制造本发明接触塞的方法包括（1）在氮化物间隔物形成蚀刻期间使用氮化物刻面蚀刻（a）或（b）在BPSG蚀刻期间; （2）使用（a）各向同性光致抗蚀剂蚀刻或部分除去中的至少一种来窄化栅极/字线氮化物之上的BPSG间隔区，以及（b）氮化物步骤蚀刻以蚀刻暴露于栅极/字线氮化物的肩部区域 BPSG蚀刻; 并且（3）在任何掺杂的多晶硅插塞填充之前将BPSG层向下抛光到栅极/字线氮化物的顶部，掩蔽用于BPSG蚀刻和执行BPSG蚀刻，通过部分除去蚀刻光致抗蚀剂层，并蚀刻 栅极/字线氮化物被曝光。