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公开(公告)号：US20050259700A1
公开(公告)日：2005-11-24
申请号：US11188203
申请日：2005-07-22
申请人： Werner Spath , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmuller
发明人： Werner Spath , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmuller
CPC分类号： H01S5/141 , H01S5/026 , H01S5/041 , H01S5/06226 , H01S5/1032 , H01S5/1071 , H01S5/18305 , H01S5/1835 , H01S5/4056
摘要： In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.
摘要翻译： 在具有具有辐射发生有源层的垂直发射器的可光学泵浦的表面发射半导体激光器件中，提供用于调制表面发射半导体器件的输出功率的至少一个调制辐射源。 调制辐射源由具有有源层的边缘发射半导体结构形成，并且其被设置为使得在操作期间辐射到垂直发射极的辐射生成有源层。 这产生了高功率和高光束质量的容易调制的表面发射激光源。 优选地，在半导体激光器件中设置用于光学泵浦垂直发射极的有源层的泵浦辐射源。
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公开(公告)号：US06947460B2
公开(公告)日：2005-09-20
申请号：US10402814
申请日：2003-03-28
申请人： Werner Späth , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmüller
发明人： Werner Späth , Johann Luft , Stephan Lutgen , Norbert Linder , Tony Albrecht , Ulrich Steegmüller
IPC分类号： H01S5/026 , H01S5/04 , H01S5/062 , H01S5/10 , H01S5/14 , H01S5/183 , H01S5/00 , H01S3/08 , H01S3/091 , H01S3/092
CPC分类号： H01S5/141 , H01S5/026 , H01S5/041 , H01S5/06226 , H01S5/1032 , H01S5/1071 , H01S5/18305 , H01S5/1835 , H01S5/4056
摘要： In an optically pumpable surface-emitting semiconductor laser device with a vertical emitter with a radiation-generating active layer, at least one modulation radiation source for modulating the output power of the surface-emitting semiconductor device is provided. The modulation radiation source is formed by an edge-emitting semiconductor structure with an active layer, and which is disposed such that during operation it radiates into the radiation-generating active layer of the vertical emitter. This produces an easily modulatable surface-emitting laser source of high power and high beam quality. A pumping radiation source for optically pumping the active layer of the vertical emitter is preferably provided in the semiconductor laser device.
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3.发明申请Lateral optically pumped surface-emitting semiconductor laser on a heat sink 有权横向光泵浦表面发射半导体激光器在散热片上公开(公告)号：US20090201958A1
公开(公告)日：2009-08-13
申请号：US11663617
申请日：2005-09-20
CPC分类号： H01S5/02248 , H01L2224/48091 , H01L2224/48227 , H01L2924/19107 , H01S3/0815 , H01S3/109 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/183 , H01S5/2027 , H01S5/4056 , H01L2924/00014
摘要： A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.
摘要翻译： 一种表面发射半导体激光器件，包括至少一个具有垂直发射极（1）和至少一个泵浦辐射源（2）的表面发射半导体激光器（21），所述至少一个表面发射半导体激光器（21）沿着彼此一体地堆叠在共同的衬底（13）上， 被描述。 半导体激光装置还具有与半导体激光器（21）热接触的导热元件（18），并且具有设置用于安装在载体（27）上的安装区域。 进一步描述制造这种表面发射半导体激光器件的方法。
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4.发明授权Method for manufacture of optically pumped, surface-emitting semiconductor laser device 有权光泵浦表面发射半导体激光器件的制造方法公开(公告)号：US08592236B2
公开(公告)日：2013-11-26
申请号：US11986909
申请日：2007-11-27
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01L21/00
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.
摘要翻译： 一种用于制造光泵浦表面发射半导体激光器件的方法，其中将具有量子限制结构的表面发射半导体激光器层序列施加到公共衬底上。 除去期望的激光区域外的表面发射半导体激光层序列并暴露区域。 将边缘发射半导体层序列施加在公共衬底上的暴露区域上，其中通过去除步骤暴露暴露区域，并且暴露区域适于将泵浦辐射传输到量子限制结构中。 然后在边缘发射半导体层序列中形成电流注入路径。
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5.发明申请公开(公告)号：US20060039437A1
公开(公告)日：2006-02-23
申请号：US11249094
申请日：2005-10-12
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.
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6.发明授权Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof 有权光学泵浦，表面发射半导体激光器件及其制造方法公开(公告)号：US06954479B2
公开(公告)日：2005-10-11
申请号：US09824086
申请日：2001-04-02
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01S5/026 , H01S5/04 , H01S5/10 , H01S5/14 , H01S5/183 , H01S5/34 , H01S5/40 , H01S5/00 , H01S3/091
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.
摘要翻译： 本发明涉及一种光泵浦表面发射半导体激光器件，其具有至少一个辐射产生量子阱结构和用于光学泵浦量子阱结构的至少一个泵浦辐射源，由此泵浦辐射源包括边缘发射半导体 结构体。 辐射产生量子阱结构和边缘发射半导体结构在公共衬底上外延生长。 利用这种单片制造的半导体激光装置，可以有利地实现发射量子阱结构的非常有效和均匀的光泵浦。 还规定了制造本发明的半导体激光器件的方法。
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7.发明申请Method for manufacture of optically pumped, surface-emitting semiconductor laser device 有权光泵浦表面发射半导体激光器件的制造方法公开(公告)号：US20080090316A1
公开(公告)日：2008-04-17
申请号：US11986909
申请日：2007-11-27
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01L21/00
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： A method for manufacturing an optically pumped surface-emitting semiconductor laser device, wherein a surface-emitting semiconductor laser layer sequence having a quantum confinement structure is applied onto a common substrate. The surface-emitting semiconductor laser layer sequence outside an intended laser region is removed and a region is exposed. An edge-emitting semiconductor layer sequence is applied onto the exposed region over the common substrate, wherein the exposed region is exposed via the removing step, and the exposed region is suitable for transmitting pump radiation into the quantum confinement structure. A current injection path is then formed in the edge-emitting semiconductor layer sequence.
摘要翻译： 一种用于制造光泵浦表面发射半导体激光器件的方法，其中将具有量子限制结构的表面发射半导体激光器层序列施加到公共衬底上。 除去期望的激光区域外的表面发射半导体激光层序列并暴露区域。 将边缘发射半导体层序列施加在公共衬底上的暴露区域上，其中通过去除步骤暴露暴露区域，并且暴露区域适于将泵浦辐射传输到量子限制结构中。 然后在边缘发射半导体层序列中形成电流注入路径。
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8.发明授权Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof 有权光学泵浦，表面发射半导体激光器件及其制造方法公开(公告)号：US07653111B2
公开(公告)日：2010-01-26
申请号：US11249094
申请日：2005-10-12
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01S5/00
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.
摘要翻译： 本发明涉及一种光泵浦表面发射半导体激光器件，其具有至少一个辐射产生量子阱结构和用于光学泵浦量子阱结构的至少一个泵浦辐射源，由此泵浦辐射源包括边缘发射半导体 结构体。 辐射产生量子阱结构和边缘发射半导体结构在公共衬底上外延生长。 利用这种单片制造的半导体激光装置，可以有利地实现发射量子阱结构的非常有效和均匀的光泵浦。 还规定了制造本发明的半导体激光器件的方法。
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9.发明申请公开(公告)号：US20050008056A1
公开(公告)日：2005-01-13
申请号：US10902342
申请日：2004-07-29
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01S5/026 , H01S5/04 , H01S5/10 , H01S5/14 , H01S5/183 , H01S5/34 , H01S5/40 , H01S5/00 , H01S3/091
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.
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10.发明授权Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof 有权光学泵浦，表面发射半导体激光器件及其制造方法公开(公告)号：US07300808B2
公开(公告)日：2007-11-27
申请号：US10902342
申请日：2004-07-29
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01L21/20
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.
摘要翻译： 本发明涉及一种光泵浦表面发射半导体激光器件，其具有至少一个辐射产生量子阱结构和用于光学泵浦量子阱结构的至少一个泵浦辐射源，由此泵浦辐射源包括边缘发射半导体 结构体。 辐射产生量子阱结构和边缘发射半导体结构在公共衬底上外延生长。 利用这种单片制造的半导体激光装置，可以有利地实现发射量子阱结构的非常有效和均匀的光泵浦。 还规定了制造本发明的半导体激光器件的方法。
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