公开(公告)号：US08831061B2

公开(公告)日：2014-09-09

申请号：US13127887

申请日：2009-10-21

申请人： Christian Lauer ,  Harald König ,  Wolfgang Reill ,  Uwe Strauss

发明人： Christian Lauer ,  Harald König ,  Wolfgang Reill ,  Uwe Strauss

IPC分类号： H01S5/42 ,  H01S5/12 ,  H01S5/042 ,  H01S5/40 ,  H01S5/22 ,  H01S5/10 ,  H01S5/022 ,  H01S5/20 ,  H01S5/065

CPC分类号： H01S5/0425 ,  H01S5/02284 ,  H01S5/0655 ,  H01S5/10 ,  H01S5/1017 ,  H01S5/1053 ,  H01S5/1064 ,  H01S5/1228 ,  H01S5/1234 ,  H01S5/1237 ,  H01S5/2036 ,  H01S5/2205 ,  H01S5/4012 ,  H01S5/4031 ,  H01S2301/166 ,  H01S2301/18

摘要： An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.

摘要翻译： 边缘发射半导体激光器芯片包括半导体本体，其包括在半导体激光器芯片的操作期间产生电磁辐射的至少一个有效区域。 至少一个接触条布置在半导体本体的顶侧的顶表面上。 至少两个限定结构用于限定接触片和活动区之间的电流扩展。 分隔结构布置在接触片的两侧。

公开(公告)号：US08369370B2

公开(公告)日：2013-02-05

申请号：US12809748

申请日：2008-12-17

申请人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

发明人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

IPC分类号： H01S5/00

CPC分类号： H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

摘要： A laser light source including a semiconductor layer sequence having an active region and a radiation coupling-out area having a first partial region and a second partial region different than the first partial region, and a filter structure. The active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first and second partial regions. The second wavelength range includes the first wavelength range, and the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction.

摘要翻译： 包括具有有源区的半导体层序列和具有与第一部分区域不同的第一部分区域和第二部分区域的辐射耦合区域的激光源，以及滤波器结构。 有源区域在操作期间产生具有第一波长范围和具有第二波长范围的非相干第二电磁辐射的相干第一电磁辐射。 相干第一电磁辐射沿着发射方向由第一部分区域发射，并且非相干的第二电磁辐射由第一和第二部分区域发射。 第二波长范围包括第一波长范围，并且滤波器结构至少部分地衰减沿着发射方向由有源区发射的非相干的第二电磁辐射。

公开(公告)号：US07817695B2

公开(公告)日：2010-10-19

申请号：US11663617

申请日：2005-09-20

申请人： Tony Albrecht ,  Stephan Lutgen ,  Wolfgang Reill ,  Thomas Schwarz ,  Ulrich Steegmüller

发明人： Tony Albrecht ,  Stephan Lutgen ,  Wolfgang Reill ,  Thomas Schwarz ,  Ulrich Steegmüller

IPC分类号： H01S5/00

CPC分类号： H01S5/02248 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/19107 ,  H01S3/0815 ,  H01S3/109 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/026 ,  H01S5/041 ,  H01S5/141 ,  H01S5/183 ,  H01S5/2027 ,  H01S5/4056 ,  H01L2924/00014

摘要： A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.

摘要翻译： 一种表面发射半导体激光器件，包括至少一个具有垂直发射极（1）和至少一个泵浦辐射源（2）的表面发射半导体激光器（21），所述至少一个表面发射半导体激光器（21）沿着彼此一体地堆叠在共同的衬底（13）上， 被描述。 半导体激光装置还具有与半导体激光器（21）热接触的导热元件（18），并且具有设置用于安装在载体（27）上的安装区域。 进一步描述制造这种表面发射半导体激光器件的方法。

公开(公告)号：US20100124246A1

公开(公告)日：2010-05-20

申请号：US11541132

申请日：2006-09-28

申请人： Stephan Lutgen ,  Tony Albrecht ,  Wolfgang Reill

发明人： Stephan Lutgen ,  Tony Albrecht ,  Wolfgang Reill

IPC分类号： H01S5/026 ,  H01L21/78 ,  H01L23/48 ,  H01L33/62 ,  H01L23/34 ,  H01S5/00

CPC分类号： H01S5/0425 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/641 ,  H01L2924/0002 ,  H01S5/02 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02476 ,  H01S5/041 ,  H01S5/14 ,  H01L2924/00

摘要： A method for production of a plurality of semiconductor chips (6) in a wafer composite. A semiconductor layer sequence (2) is grown on a growth substrate (1), metallization (3) is applied to the semiconductor layer sequence (2), a metal layer (4) is electrochemically deposited onto the metallization (3), and the semiconductor layer sequence (2) is then structured and separated to form individual semiconductor chips (6). The electrochemically applied metal layer (4) is particularly suitable for use as a heat spreader, for dissipation of the heat produced by the semiconductor chips (6).

摘要翻译： 一种用于在晶片复合材料中制造多个半导体芯片（6）的方法。 在生长衬底（1）上生长半导体层序列（2），向半导体层序列（2）施加金属化（3），金属层（4）电化学沉积到金属化层（3）上， 半导体层序列（2）然后被构造和分离以形成单独的半导体芯片（6）。 电化学施加的金属层（4）特别适合用作散热器，用于散发由半导体芯片（6）产生的热量。

公开(公告)号：USRE38280E1

公开(公告)日：2003-10-21

申请号：US09785346

申请日：2001-02-16

申请人： Hans-Ludwig Althaus ,  Wolfgang Gramann ,  Wolfgang Reill ,  Werner Spath

发明人： Hans-Ludwig Althaus ,  Wolfgang Gramann ,  Wolfgang Reill ,  Werner Spath

IPC分类号： G02B2714

CPC分类号： H04B10/40 ,  G02B6/4246

摘要： An optoelectric module for bidirectional optical data transmission has a molded element provided as a beam splitter, which consists essentially of a material that is transparent for the emitted radiation and the received radiation, and in which a beam splitter is embedded. A transmitting component, a receiving component and a radiation focusing device are advantageously directly connected to the molded element.

公开(公告)号：US20130148683A1

公开(公告)日：2013-06-13

申请号：US13730363

申请日：2008-12-17

申请人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

发明人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

IPC分类号： H01S5/028 ,  H01L33/44

CPC分类号： H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

摘要： A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).

公开(公告)号：US20130128909A1

公开(公告)日：2013-05-23

申请号：US13695249

申请日：2011-05-09

申请人： Harald Koenig ,  Uwe Strauss ,  Wolfgang Reill

发明人： Harald Koenig ,  Uwe Strauss ,  Wolfgang Reill

IPC分类号： H01S5/30 ,  H01L33/00

CPC分类号： H01S5/30 ,  H01L33/005 ,  H01L2924/0002 ,  H01S5/0201 ,  H01S5/0283 ,  H01S5/0425 ,  H01S5/0625 ,  H01S5/16 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/4031 ,  H01L2924/00

摘要： An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.

摘要翻译： 指定边缘发射半导体激光器。 半导体本体包括适于产生电磁辐射的活性区域。 有源区域上的至少两个面形成谐振器。 至少两个接触点在横向方向上彼此间隔开至少一个中间区域，并且安装在半导体本体的外表面上。

公开(公告)号：US20070081564A1

公开(公告)日：2007-04-12

申请号：US11529976

申请日：2006-09-28

申请人： Michael Kuhnelt ,  Ulrich Steegmuller ,  Wolfgang Reill ,  Thomas Schwarz ,  Frank Singer

发明人： Michael Kuhnelt ,  Ulrich Steegmuller ,  Wolfgang Reill ,  Thomas Schwarz ,  Frank Singer

IPC分类号： H01S3/098 ,  H01S3/091

CPC分类号： H01S5/141 ,  H01S3/0805 ,  H01S3/109 ,  H01S5/024 ,  H01S5/041 ,  H01S5/18394 ,  H01S2301/18 ,  H04N9/3129

摘要： An optically pumped, surface-emitting semiconductor laser having a mode-selective apparatus (7) which is intended for suppression of predeterminable, higher resonator modes of the semiconductor laser. The mode-selective apparatus is arranged in the beam path of a pump beam source (2) of the surface-emitting semiconductor laser.

摘要翻译： 一种具有模式选择装置（7）的光泵浦的表面发射半导体激光器，其旨在用于抑制半导体激光器的可预先确定的较高谐振器模式。 模式选择装置被布置在表面发射半导体激光器的泵浦光源（2）的光束路径中。

公开(公告)号：US6097521A

公开(公告)日：2000-08-01

申请号：US281816

申请日：1999-03-30

申请人： Hans-Ludwig Althaus ,  Wolfgang Gramann ,  Wolfgang Reill ,  Werner Spath

发明人： Hans-Ludwig Althaus ,  Wolfgang Gramann ,  Wolfgang Reill ,  Werner Spath

IPC分类号： G02B6/42 ,  H04B10/00

CPC分类号： G02B6/4246

摘要： An optoelectronic module for bidirectional optical data transmission has a molded element provided as a beam splitter, which consists essentially of a material that is transparent for the emitted radiation and the received radiation, and in which a beam splitter is embedded. A transmitting component, a receiving component and a radiation focusing device are advantageously directly connected to the molded element.

摘要翻译： 用于双向光学数据传输的光电模块具有作为分束器提供的模制元件，其基本上由对于所发射的辐射和所接收的辐射是透明的材料组成，并且其中嵌入有分束器。 发射部件，接收部件和辐射聚焦装置有利地直接连接到模制元件。

公开(公告)号：US08964808B2

公开(公告)日：2015-02-24

申请号：US13730363

申请日：2008-12-17

申请人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

发明人： Alfred Lell ,  Christoph Eichler ,  Wolfgang Schmid ,  Soenke Tautz ,  Wolfgang Reill ,  Dimitri Dini

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/10

CPC分类号： H01S5/1082 ,  H01S5/0078 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0286 ,  H01S5/1017 ,  H01S5/105 ,  H01S5/1078 ,  H01S5/1092 ,  H01S5/22 ,  H01S2301/02 ,  H01S2301/166

摘要： A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).

摘要翻译： 激光光源特别包括具有有源区（45）和辐射耦合输出区（12）的半导体层序列（10），辐射耦合输出区域（12）具有不同的第一部分区域（121）和第二部分区域（122） 以及滤波器结构（5），其中所述有源区（45）在操作期间产生具有第一波长范围和具有第二波长范围的非相干第二电磁辐射（52）的相干第一电磁辐射（51） 相干第一电磁辐射（51）沿着发射方向（90）由第一部分区域（121）发射，非相干的第二电磁辐射（52）由第一部分区域（121）和第二部分区域 （122），所述第二波长范围包括所述第一波长范围，并且所述滤波器结构（5）至少部分地衰减由所述有源区沿着所述发射方向发射的非相干的第二电磁辐射（52） （90）。