Resonating sensor with mechanical constraints
    2.
    发明授权
    Resonating sensor with mechanical constraints 有权
    谐振传感器具有机械约束

    公开(公告)号:US08631700B2

    公开(公告)日:2014-01-21

    申请号:US12940354

    申请日:2010-11-05

    IPC分类号: G01C19/56

    CPC分类号: G01C19/5698

    摘要: A method and apparatus for sensing movement resonates a primary member in a flexure mode at a given frequency, thus causing the primary member to have top and bottom portions that resonate at substantially about zero Hertz. The method also secures the bottom portion to a first substrate, and mechanically constrains the top portion while resonating in the flexure mode to substantially eliminate vibrations in the top portion. Finally, the method generates a changing capacitance signal in response to movement of the primary member. When generating this changing capacitance signal, the primary member resonates in a bulk mode at a given frequency.

    摘要翻译: 用于感测运动的方法和装置以给定的频率以弯曲模式谐振主要构件,从而使主构件具有基本上约为零赫兹共振的顶部和底部。 该方法还将底部部分固定到第一基板,并且机械约束顶部部分,同时以弯曲模式共振,以基本上消除顶部部分中的振动。 最后,该方法响应于主构件的移动而产生变化的电容信号。 当产生这种改变的电容信号时,主要部件以给定的频率以体模式谐振。

    Method for microfabricating structures using silicon-on-insulator material
    3.
    发明授权
    Method for microfabricating structures using silicon-on-insulator material 有权
    使用绝缘体上硅材料微结构的方法

    公开(公告)号:US06946314B2

    公开(公告)日:2005-09-20

    申请号:US10642315

    申请日:2003-08-15

    摘要: The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer. The method includes providing an SOI wafer that has (i) a handle layer, (ii) a dielectric layer, and (iii) a device layer, wherein a mesa etch has been made on the device layer of the SOI wafer, providing a substrate, wherein a pattern has been etched onto the substrate, bonding the SOI wafer and the substrate together, removing the handle layer of the SOI wafer, removing the dielectric layer of the SOI wafer, then performing a structural etch on the device layer of the SOI wafer to define the device.

    摘要翻译: 本发明提供了使用绝缘体上硅(SOI)晶片生产微电子机械系统(MEMS)和相关器件的一般制造方法。 该方法包括提供SOI晶片,其具有(i)手柄层,(ii)电介质层和(iii)器件层,其中在SOI晶片的器件层上进行台面蚀刻,提供衬底 其中图案已被蚀刻到衬底上,将SOI晶片和衬底接合在一起,去除SOI晶片的手柄层,去除SOI晶片的电介质层,然后对SOI的器件层进行结构蚀刻 晶圆来定义设备。

    MEMS device and interposer and method for integrating MEMS device and interposer
    5.
    发明授权
    MEMS device and interposer and method for integrating MEMS device and interposer 有权
    用于集成MEMS器件和插入器的MEMS器件和插入器和方法

    公开(公告)号:US07655538B2

    公开(公告)日:2010-02-02

    申请号:US11857720

    申请日:2007-09-19

    申请人: William D. Sawyer

    发明人: William D. Sawyer

    IPC分类号: H01L21/58

    CPC分类号: B81B7/0048 B81B2203/0307

    摘要: A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially define the MEMS device, bonding the SOI wafer to an interposer by direct boding, removing the handle layer of the SOI wafer, removing the oxide layer of the SOI wafer, and further etching the device layer of the SOI wafer to define the MEMS device. A structure manufactured according to the above described processes includes an interposer comprising an SOI wafer and a MEMS device mounted on the interposer. The MEMS device comprises posts extending from a silicon plate. The MEMS device is directly mounted to the interposer by bonding the posts of the MEMS device to the device layer of the interposer.

    摘要翻译: 使用绝缘体上硅(SOI)晶片制造微机电系统(MEMS)和相关器件的方法包括提供SOI晶片,执行台面蚀刻以至少部分限定MEMS器件,通过直接将SOI晶片连接到插入器 去除SOI晶片的手柄层,去除SOI晶片的氧化物层,并进一步蚀刻SOI晶片的器件层以限定MEMS器件。 根据上述工艺制造的结构包括内插器,其包括安装在插入件上的SOI晶片和MEMS器件。 MEMS器件包括从硅板延伸的柱。 MEMS器件通过将MEMS器件的柱结合到插入器的器件层而直接安装到插入器。

    Resonating Sensor with Mechanical Constraints
    7.
    发明申请
    Resonating Sensor with Mechanical Constraints 有权
    谐振传感器与机械约束

    公开(公告)号:US20120111112A1

    公开(公告)日:2012-05-10

    申请号:US12940354

    申请日:2010-11-05

    IPC分类号: G01P15/00

    CPC分类号: G01C19/5698

    摘要: A method and apparatus for sensing movement resonates a primary member in a flexure mode at a given frequency, thus causing the primary member to have top and bottom portions that resonate at substantially about zero Hertz. The method also secures the bottom portion to a first substrate, and mechanically constrains the top portion while resonating in the flexure mode to substantially eliminate vibrations in the top portion. Finally, the method generates a changing capacitance signal in response to movement of the primary member. When generating this changing capacitance signal, the primary member resonates in a bulk mode at a given frequency.

    摘要翻译: 用于感测运动的方法和装置以给定的频率以弯曲模式谐振主要构件,从而使主构件具有基本上约为零赫兹共振的顶部和底部。 该方法还将底部部分固定到第一基板,并且机械约束顶部部分,同时以弯曲模式共振,以基本上消除顶部部分中的振动。 最后,该方法响应于主构件的移动而产生变化的电容信号。 当产生这种改变的电容信号时,主要部件以给定的频率以体模式谐振。

    MEMS DEVICE AND INTERPOSER AND METHOD FOR INTEGRATING MEMS DEVICE AND INTERPOSER
    8.
    发明申请
    MEMS DEVICE AND INTERPOSER AND METHOD FOR INTEGRATING MEMS DEVICE AND INTERPOSER 有权
    MEMS器件和插入器以及用于集成MEMS器件和插入器的方法

    公开(公告)号:US20110001198A1

    公开(公告)日:2011-01-06

    申请号:US12697713

    申请日:2010-02-01

    申请人: William D. Sawyer

    发明人: William D. Sawyer

    CPC分类号: B81B7/0048 B81B2203/0307

    摘要: A method for producing Microelectromechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer includes providing an SOI wafer, performing a mesa etch to at least partially define the MEMS device, bonding the SOI wafer to an interposer by direct boding, removing the handle layer of the SOI wafer, removing the oxide layer of the SOI wafer, and further etching the device layer of the SOI wafer to define the MEMS device. A structure manufactured according to the above described processes includes an interposer comprising an SOI wafer and a MEMS device mounted on the interposer. The MEMS device comprises posts extending from a silicon plate. The MEMS device is directly mounted to the interposer by bonding the posts of the MEMS device to the device layer of the interposer.

    摘要翻译: 使用绝缘体上硅(SOI)晶片制造微机电系统(MEMS)和相关器件的方法包括提供SOI晶片,执行台面蚀刻以至少部分限定MEMS器件,通过直接将SOI晶片连接到插入器 去除SOI晶片的手柄层,去除SOI晶片的氧化物层,并进一步蚀刻SOI晶片的器件层以限定MEMS器件。 根据上述工艺制造的结构包括内插器,其包括安装在插入件上的SOI晶片和MEMS器件。 MEMS器件包括从硅板延伸的柱。 MEMS器件通过将MEMS器件的柱结合到插入器的器件层而直接安装到插入器。

    Input/output device arrangements for terminals
    9.
    发明授权
    Input/output device arrangements for terminals 失效
    端子的输入/输出装置布置

    公开(公告)号:US4533791A

    公开(公告)日:1985-08-06

    申请号:US346219

    申请日:1982-02-05

    摘要: In a mounting arrangement of lamellar, input/output devices for a computer or telecommunications terminal, one of the devices is movable relative to another of the devices between a limited operational position in which a first input/output device is operably exposed but masks a second device, and a fully operational position in which both the first and second devices are operably exposed. One embodiment has one input/output device sliding relative to a vertically adjacent input/output device. In another embodiment, input/output devices are hinged relative to each other and to a common cabinet base. The mounting arrangements offer the advantages of spatial economy, input/output device protection, and the capacity for an aesthetically attractive cabinet.

    摘要翻译: 在用于计算机或电信终端的层状输入/输出装置的安装布置中,所述装置中的一个可以相对于所述装置中的另一装置在可操作地暴露第一输入/输出装置的有限操作位置之间移动, 装置和完全可操作的位置,其中第一和第二装置都可操作地暴露。 一个实施例具有一个输入/输出装置相对于垂直相邻的输入/输出装置滑动。 在另一个实施例中,输入/输出装置相对于彼此和公共的柜底铰接。 安装布置提供了空间经济,输入/输出设备保护以及美观吸引力的机柜的优势。