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    Biomimetic vascular network and devices using the same
    1.
    发明授权
    Biomimetic vascular network and devices using the same 有权

    公开(公告)号：US09498320B2

    公开(公告)日：2016-11-22

    申请号：US14081378

    申请日：2013-11-15

    申请人： David M. Hoganson ,  Jeffrey T. Borenstein

    发明人： David M. Hoganson ,  Jeffrey T. Borenstein

    IPC分类号： A61F2/04 ,  A61F2/06 ,  G01N33/50 ,  A61F2/02

    CPC分类号： A61F2/06 ,  A61F2/022 ,  A61F2/04 ,  A61F2/062 ,  A61F2002/068 ,  G01N33/5008 ,  G06F19/00

    摘要： The invention provides method of fabricating a scaffold comprising a fluidic network, including the steps of: (a) generating an initial vascular layer for enclosing the chamber and providing fluid to the cells, the initial vascular layer having a network of channels for fluid; (b) translating the initial vascular layer into a model for fluid dynamics analysis; (c) analyzing the initial vascular layer based on desired parameters selected from the group consisting of a characteristic of a specific fluid, an input pressure, an output pressure, an overall flow rate and combinations thereof to determine sheer stress and velocity within the network of channels; (d) measuring the sheer stress and the velocity and comparing the obtained values to predetermined values; (e) determining if either of the shear stress or the velocity are greater than or less than the predetermined values, and (f) optionally modifying the initial vascular layer and repeating steps (b)-(e). The invention also provides compositions comprising a vascular layer for use in tissue lamina as well as a medical devices having a vascular layer and kits.

    BIOMIMETIC VASCULAR NETWORK AND DEVICES USING THE SAME
    2.
    发明申请
    BIOMIMETIC VASCULAR NETWORK AND DEVICES USING THE SAME 审中-公开
    生物体血管网络及使用该装置的装置

    公开(公告)号：US20150366651A1

    公开(公告)日：2015-12-24

    申请号：US14615646

    申请日：2015-02-06

    申请人： David M. Hoganson ,  Howard I. Pryor ,  Ira Spool ,  Joseph P. Vacanti ,  Jeffrey T. Borenstein

    发明人： David M. Hoganson ,  Howard I. Pryor ,  Ira Spool ,  Joseph P. Vacanti ,  Jeffrey T. Borenstein

    IPC分类号： A61F2/06 ,  A61F2/02

    CPC分类号： A61F2/06 ,  A61F2/022 ,  A61F2/04 ,  A61F2/062 ,  A61F2002/068 ,  G01N33/5008

    摘要： The invention provides method of fabricating a scaffold comprising a fluidic network, including the steps of: (a) generating an initial vascular layer for enclosing the chamber and providing fluid to the cells, the initial vascular layer having a network of channels for fluid; (b) translating the initial vascular layer into a model for fluid dynamics analysis; (c) analyzing the initial vascular layer based on desired parameters selected from the group consisting of a characteristic of a specific fluid, an input pressure, an output pressure, an overall flow rate and combinations thereof to determine sheer stress and velocity within the network of channels; (d) measuring the sheer stress and the velocity and comparing the obtained values to predetermined values; (e) determining if either of the shear stress or the velocity are greater than or less than the predetermined values, and (f) optionally modifying the initial vascular layer and repeating steps (b)-(e). The invention also provides compositions comprising a vascular layer for use in tissue lamina as well as a medical devices having a vascular layer and kits.

    摘要翻译： 本发明提供了制造包括流体网络的支架的方法，包括以下步骤：（a）产生用于封闭腔室并向细胞提供流体的初始血管层，初始血管层具有用于流体的通道网络; （b）将初始血管层转化为用于流体动力学分析的模型; （c）基于从由特定流体的特性，输入压力，输出压力，总体流速及其组合组成的组中选择的期望参数来分析初始血管层，以确定网络内的纯粹的应力和速度 渠道; （d）测量纯应力和速度，并将获得的值与预定值进行比较; （e）确定剪切应力或速度是否大于或小于预定值，和（f）任选地修饰初始血管层并重复步骤（b） - （e）。 本发明还提供包含用于组织层的血管层的组合物以及具有血管层和试剂盒的医疗装置。

    Method for microfabricating structures using silicon-on-insulator material
    9.
    发明授权
    Method for microfabricating structures using silicon-on-insulator material 有权
    使用绝缘体上硅材料微结构的方法

    公开(公告)号：US07335527B2

    公开(公告)日：2008-02-26

    申请号：US11231103

    申请日：2005-09-20

    申请人： William D. Sawyer ,  Jeffrey T. Borenstein

    发明人： William D. Sawyer ,  Jeffrey T. Borenstein

    IPC分类号： H01L21/00 ,  B81C1/00

    CPC分类号： B81C1/00182 ,  B81C1/00579 ,  B81C3/001 ,  B81C2201/0191

    摘要： The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI) wafer. The method includes providing an SOI wafer that has (i) a handle layer, (ii) a dielectric layer, and (iii) a device layer, wherein a mesa etch has been made on the device layer of the SOI wafer, providing a substrate, wherein a pattern has been etched onto the substrate, bonding the SOI wafer and the substrate together, removing the handle layer of the SOI wafer, removing the dielectric layer of the SOI wafer, then performing a structural etch on the device layer of the SOI wafer to define the device.

    摘要翻译： 本发明提供了使用绝缘体上硅（SOI）晶片生产微电子机械系统（MEMS）和相关器件的一般制造方法。 该方法包括提供SOI晶片，其具有（i）手柄层，（ii）电介质层和（iii）器件层，其中在SOI晶片的器件层上进行台面蚀刻，提供衬底 其中图案已被蚀刻到衬底上，将SOI晶片和衬底接合在一起，去除SOI晶片的手柄层，去除SOI晶片的电介质层，然后对SOI的器件层进行结构蚀刻 晶圆来定义设备。