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    SOLAR CELL
    3.
    发明申请
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号：US20120048370A1

    公开(公告)日：2012-03-01

    申请号：US13216061

    申请日：2011-08-23

    申请人： Hyungseok KIM ,  Kwangsun Ji ,  Youngjoo Eo ,  Heonmin Lee ,  Choul Kim ,  Hojung Syn ,  Wonseok Choi ,  Kihoon Park ,  Junghoon Choi ,  Hyunjin Yang

    发明人： Hyungseok KIM ,  Kwangsun Ji ,  Youngjoo Eo ,  Heonmin Lee ,  Choul Kim ,  Hojung Syn ,  Wonseok Choi ,  Kihoon Park ,  Junghoon Choi ,  Hyunjin Yang

    IPC分类号： H01L31/0376

    CPC分类号： H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A solar cell includes a crystalline semiconductor substrate containing a first impurity of a first conductive type, a first non-crystalline impurity semiconductor region directly contacting with the crystalline semiconductor substrate to form a p-n junction with the crystalline semiconductor substrate and including a first portion in which a second impurity of a second conductive type is doped with a first impurity doping concentration and a second portion in which the second impurity is doped with a second impurity doping concentration, the first impurity doping concentration being less than an impurity doping concentration of the crystalline semiconductor substrate and the second impurity doping concentration being greater than the impurity doping concentration of the crystalline semiconductor substrate, a first electrode connected to the first non-crystalline impurity semiconductor region, and a second electrode connected to the crystalline semiconductor substrate.

    摘要翻译： 太阳能电池包括含有第一导电类型的第一杂质的晶体半导体衬底，与晶体半导体衬底直接接触以与晶体半导体衬底形成pn结的第一非结晶杂质半导体区，并且包括第一部分， 第二导电类型的第二杂质掺杂有第一杂质掺杂浓度，第二杂质掺杂有第二杂质掺杂浓度的第二部分，第一杂质掺杂浓度小于晶体半导体的杂质掺杂浓度 衬底，并且第二杂质掺杂浓度大于晶体半导体衬底的杂质掺杂浓度，连接到第一非晶态杂质半导体区的第一电极和连接到晶体半导体衬底的第二电极。

    Solar cell
    5.
    发明授权
    Solar cell 有权
    太阳能电池

    公开(公告)号：US08525018B2

    公开(公告)日：2013-09-03

    申请号：US12876821

    申请日：2010-09-07

    申请人： Kwangsun Ji ,  Heonmin Lee ,  Hojung Syn ,  Wonseok Choi ,  Junghoon Choi ,  Hyunjin Yang

    发明人： Kwangsun Ji ,  Heonmin Lee ,  Hojung Syn ,  Wonseok Choi ,  Junghoon Choi ,  Hyunjin Yang

    IPC分类号： H01L31/00

    CPC分类号： H01L31/02167 ,  H01L31/022441 ,  H01L31/0747 ,  Y02E10/50

    摘要： A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.

    摘要翻译： 讨论太阳能电池。 太阳能电池包括第一导电类型的衬底，位于衬底上的与第一导电类型相反的第二导电类型的发射极区域，位于待分离的衬底上的第一导电类型的第一场区域 从发射极区域，电连接到发射极区域的第一电极，电连接到第一场区域的第二电极和位于发射极区域和第一场区域中的至少一个的绝缘区域。

    SOLAR CELL
    6.
    发明申请
    SOLAR CELL 有权
    太阳能电池

    公开(公告)号：US20110056545A1

    公开(公告)日：2011-03-10

    申请号：US12876821

    申请日：2010-09-07

    申请人： Kwangsun JI ,  Heonmin Lee ,  Hojung Syn ,  Wonseok Choi ,  Junghoon Choi ,  Hyunjin Yang

    发明人： Kwangsun JI ,  Heonmin Lee ,  Hojung Syn ,  Wonseok Choi ,  Junghoon Choi ,  Hyunjin Yang

    IPC分类号： H01L31/04

    CPC分类号： H01L31/02167 ,  H01L31/022441 ,  H01L31/0747 ,  Y02E10/50

    摘要： A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type that is positioned on the substrate, a first field region of the first conductive type that is positioned on the substrate to be separated from the emitter region, a first electrode electrically connected to the emitter region, a second electrode electrically connected to the first field region, and an insulating region positioned on at least one of the emitter region and the first field region.

    摘要翻译： 讨论太阳能电池。 太阳能电池包括第一导电类型的衬底，位于衬底上的与第一导电类型相反的第二导电类型的发射极区域，位于待分离的衬底上的第一导电类型的第一场区域 从发射极区域，电连接到发射极区域的第一电极，电连接到第一场区域的第二电极和位于发射极区域和第一场区域中的至少一个的绝缘区域。

    Solar cell
    7.
    发明授权
    Solar cell 有权
    太阳能电池

    公开(公告)号：US08633379B2

    公开(公告)日：2014-01-21

    申请号：US13211069

    申请日：2011-08-16

    申请人： Kwangsun Ji ,  Heonmin Lee ,  Junghoon Choi ,  Hojung Syn

    发明人： Kwangsun Ji ,  Heonmin Lee ,  Junghoon Choi ,  Hojung Syn

    IPC分类号： H01L31/00

    CPC分类号： H01L31/0747 ,  H01L31/0682 ,  Y02E10/547

    摘要： A solar cell is discussed. The solar cell includes a substrate having a first conductivity type and made of a crystalline semiconductor; an emitter region having a second conductivity type opposite the first conductivity type, and forming a p-n junction with the substrate; a surface field region having the first conductivity type and being separated from the emitter region; a first electrode connected to the emitter region; and a second electrode connected to the surface field region, wherein at least one of the emitter region and the surface field region includes a plurality of semiconductor portions, and at least one of the plurality of semiconductor portion is a crystalline semiconductor portion.

    摘要翻译： 讨论太阳能电池。 太阳能电池包括具有第一导电类型并由结晶半导体制成的衬底; 具有与第一导电类型相反的第二导电类型的发射极区域，并与衬底形成p-n结; 具有第一导电类型并与发射极区分离的表面场区; 连接到所述发射极区域的第一电极; 以及连接到所述表面场区域的第二电极，其中所述发射极区域和所述表面场区域中的至少一个包括多个半导体部分，并且所述多个半导体部分中的至少一个是晶体半导体部分。

    Back contact solar cell and manufacturing method thereof
    9.
    发明授权
    Back contact solar cell and manufacturing method thereof 有权
    背接触太阳能电池及其制造方法

    公开(公告)号：US09082920B2

    公开(公告)日：2015-07-14

    申请号：US13269261

    申请日：2011-10-07

    申请人： Hojung Syn ,  Hyunjin Yang ,  Junghoon Choi ,  Youngjoo Eo

    发明人： Hojung Syn ,  Hyunjin Yang ,  Junghoon Choi ,  Youngjoo Eo

    IPC分类号： H01L31/0232 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0747

    CPC分类号： H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0747 ,  H01L31/202 ,  Y02E10/50 ,  Y02E10/52

    摘要： A back contact solar cell and a method for manufacturing the back contact solar cell are discussed. The back contact solar cell includes a substrate made of crystalline silicon having a first conductivity type, a passivation layer on one side of the substrate, an antireflection layer on the passivation layer, a first electrode on the other side of the substrate, a second electrode on the other side of the substrate and separated from the first electrode, a first semiconductor layer disposed between the first electrode and the substrate and having the first conductivity type, and a second semiconductor layer disposed between the second electrode and the substrate and having a second conductivity type that is opposite to the first conductivity type. The passivation layer includes at least one of amorphous silicon oxide and amorphous silicon carbide.

    摘要翻译： 讨论了背接触太阳能电池和背接触太阳能电池的制造方法。 背接触太阳能电池包括由基底导电类型的晶体硅构成的衬底，衬底一侧上的钝化层，钝化层上的抗反射层，衬底另一侧的第一电极，第二电极 在所述基板的另一侧并且与所述第一电极分离，设置在所述第一电极和所述基板之间并且具有所述第一导电类型的第一半导体层，以及设置在所述第二电极和所述基板之间的第二半导体层， 导电类型与第一导电类型相反。 钝化层包括非晶硅氧化物和非晶碳化硅中的至少一种。

    BACK CONTACT SOLAR CELL AND MANUFACTURING METHOD THEREOF
    10.
    发明申请
    BACK CONTACT SOLAR CELL AND MANUFACTURING METHOD THEREOF 有权
    返回联系太阳能电池及其制造方法

    公开(公告)号：US20120145233A1

    公开(公告)日：2012-06-14

    申请号：US13269261

    申请日：2011-10-07

    申请人： Hojung Syn ,  Hyunjin Yang ,  Junghoon Choi ,  Youngjoo EO

    发明人： Hojung Syn ,  Hyunjin Yang ,  Junghoon Choi ,  Youngjoo EO

    IPC分类号： H01L31/0224 ,  H01L31/0232

    CPC分类号： H01L31/02167 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0747 ,  H01L31/202 ,  Y02E10/50 ,  Y02E10/52

    摘要： A back contact solar cell and a method for manufacturing the back contact solar cell are discussed. The back contact solar cell includes a substrate made of crystalline silicon having a first conductivity type, a passivation layer on one side of the substrate, an antireflection layer on the passivation layer, a first electrode on the other side of the substrate, a second electrode on the other side of the substrate and separated from the first electrode, a first semiconductor layer disposed between the first electrode and the substrate and having the first conductivity type, and a second semiconductor layer disposed between the second electrode and the substrate and having a second conductivity type that is opposite to the first conductivity type. The passivation layer includes at least one of amorphous silicon oxide and amorphous silicon carbide.

    摘要翻译： 讨论了背接触太阳能电池和背接触太阳能电池的制造方法。 背接触太阳能电池包括由基底导电类型的晶体硅构成的衬底，衬底一侧上的钝化层，钝化层上的抗反射层，衬底另一侧的第一电极，第二电极 在所述基板的另一侧并且与所述第一电极分离，设置在所述第一电极和所述基板之间并且具有所述第一导电类型的第一半导体层，以及设置在所述第二电极和所述基板之间的第二半导体层， 导电类型与第一导电类型相反。 钝化层包括非晶硅氧化物和非晶碳化硅中的至少一种。