利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

25 条记录 (耗时 0.033 秒)

    PULL-BACK DESIGN TO MITIGATE PLASTIC SENSOR CRACKS
    1.
    发明申请
    PULL-BACK DESIGN TO MITIGATE PLASTIC SENSOR CRACKS 审中-公开
    拉回设计减轻塑料传感器裂纹

    公开(公告)号：US20140065321A1

    公开(公告)日：2014-03-06

    申请号：US13602029

    申请日：2012-08-31

    申请人： Wonsuk Chung ,  Chun-Hao Tung ,  Yu-Chun Tseng ,  Sunggu Kang ,  John Z. Zhong ,  Siddharth Mohapatra

    发明人： Wonsuk Chung ,  Chun-Hao Tung ,  Yu-Chun Tseng ,  Sunggu Kang ,  John Z. Zhong ,  Siddharth Mohapatra

    IPC分类号： H05K3/00

    CPC分类号： H05K3/0052 ,  H05K3/0032 ,  H05K3/28 ,  H05K2203/0228

    摘要： The described embodiments relate generally to the singulation of circuits and more particularly to a method of cutting of a polymer substrate that is overlaid with a conductive element and a passivation layer. In one embodiment, the passivation layer is applied selectively to the polymer substrate in an area covering the conductive element and extending at least a first distance past an outer edge of the conductive element. Then, a cutting operation is performed along a cutting path located a second distance from an outer edge of the passivation layer. The second distance is a minimum distance between the edge of the passivation layer and the cutting path that prevents a load applied at the second distance from causing a stress crack in the passivation layer.

    摘要翻译： 所描述的实施例大体上涉及电路的单个化，更具体地涉及切割覆盖有导电元件和钝化层的聚合物衬底的方法。 在一个实施例中，钝化层在覆盖导电元件的区域中选择性地施加到聚合物衬底，并且延伸至少通过导电元件的外边缘的第一距离。 然后，沿着距离钝化层的外边缘第二距离的切割路径执行切割操作。 第二距离是钝化层的边缘与切割路径之间的最小距离，该距离防止在第二距离施加的载荷在钝化层中引起应力裂纹。

    Electromechanical devices having support structures
    2.
    发明授权
    Electromechanical devices having support structures 有权
    具有支撑结构的机电装置

    公开(公告)号：US08344470B2

    公开(公告)日：2013-01-01

    申请号：US13099221

    申请日：2011-05-02

    申请人： Jeffrey B. Sampsell ,  Clarence Chui ,  Manish Kothari ,  Mark W. Miles ,  Teruo Sasagawa ,  Wonsuk Chung ,  Ming-Hau Tung

    发明人： Jeffrey B. Sampsell ,  Clarence Chui ,  Manish Kothari ,  Mark W. Miles ,  Teruo Sasagawa ,  Wonsuk Chung ,  Ming-Hau Tung

    IPC分类号： H01L31/0232

    CPC分类号： G02B26/001 ,  B81B3/007 ,  B81B2201/047 ,  B81B2203/0307 ,  B81B2203/053

    摘要： Embodiments of MEMS devices comprise a conductive movable layer spaced apart from a conductive fixed layer by a gap, and supported by rigid support structures, or rivets, overlying depressions in the conductive movable layer, or by posts underlying depressions in the conductive movable layer. In certain embodiments, both rivets and posts may be used. In certain embodiments, these support structures are formed from rigid inorganic materials, such as metals or oxides. In certain embodiments, etch barriers may also be deposited to facilitate the use of materials in the formation of support structures which are not selectively etchable with respect to other components within the MEMS device.

    摘要翻译： MEMS器件的实施例包括通过间隙与导电固定层间隔开的导电可移动层，并且由导电可移动层中的上凹部的刚性支撑结构或铆钉支撑，或由导电可移动层中的凹陷下方的柱支撑。 在某些实施例中，可以使用铆钉和柱。 在某些实施方案中，这些支撑结构由诸如金属或氧化物的刚性无机材料形成。 在某些实施例中，还可以沉积蚀刻阻挡层以促进材料在形成相对于MEMS器件内的其它部件不能选择性蚀刻的支撑结构的形成中的使用。

    Patterning of mechanical layer in MEMS to reduce stresses at supports
    3.
    发明申请
    Patterning of mechanical layer in MEMS to reduce stresses at supports 失效
    MEMS中机械层的图案化，以减少支撑件的应力

    公开(公告)号：US20070279753A1

    公开(公告)日：2007-12-06

    申请号：US11445529

    申请日：2006-06-01

    申请人： Ming-Hau Tung ,  Wonsuk Chung

    发明人： Ming-Hau Tung ,  Wonsuk Chung

    IPC分类号： G02B27/14

    CPC分类号： G02B26/001 ,  B81B2201/047 ,  B81C1/00666 ,  B81C2201/0109

    摘要： A method of fabricating a MEMS device includes the formation of support posts having horizontal wing portions at the edges of the post. A mechanical layer is deposited over the support posts and portions of the mechanical layer overlying portions of the support post other than the horizontal wing portions are etched away. A resultant MEMS device includes a mechanical layer overlying at least a portion of the horizontal wing portions of the underlying support structures.

    摘要翻译： 制造MEMS器件的方法包括在柱的边缘处形成具有水平翼部的支撑柱。 机械层沉积在支撑柱上，并且除了水平翼部分之外的覆盖支撑柱的部分的机械层的部分被蚀刻掉。 所得到的MEMS器件包括覆盖下面的支撑结构的水平翼部分的至少一部分的机械层。

    Method and system for registering IP address in portable Internet network when interworking with different types of network
    4.
    发明申请
    Method and system for registering IP address in portable Internet network when interworking with different types of network 审中-公开
    在与不同类型的网络互通时，在便携式互联网中注册IP地址的方法和系统

    公开(公告)号：US20070264979A1

    公开(公告)日：2007-11-15

    申请号：US11410360

    申请日：2006-04-25

    申请人： Seongsoo Park ,  Donghahk Lee ,  Wonsuk Chung

    发明人： Seongsoo Park ,  Donghahk Lee ,  Wonsuk Chung

    IPC分类号： H04Q7/38 ,  H04Q7/22 ,  H04M3/42

    CPC分类号： H04W8/06 ,  H04L29/12311 ,  H04L61/2015 ,  H04L61/2084 ,  H04L65/1073 ,  H04M7/006 ,  H04M2207/18 ,  H04W80/04

    摘要： Disclosed is a method for registering an IP address in a Portable Internet network in interworking with a different type of network, which enables a communication service to be continued without change in an IP address of a personal subscriber station when the personal subscriber station moves to the Portable Internet network, the method including: (a) when the personal subscriber station accesses the Portable Internet network, receiving a registration request message from the personal subscriber station, the registration request message including both information on an IP assignment method by which an IP address has been assigned to the personal subscriber station in the different type of network, and information on an IP address assigned to the personal subscriber station; and (b) registering the IP address being used by the different type of network as the IP address of the personal subscriber station by using the IP address information.

    摘要翻译： 公开了一种用于在便携式因特网网络中注册与不同类型的网络相互作用的IP地址的方法，这使得当个人用户站移动到个人用户站时，无需改变个人用户站的IP地址就可以继续通信服务 便携式因特网网络，该方法包括：（a）当个人用户台访问便携式因特网时，从个人用户站接收注册请求消息，该注册请求消息包括IP分配方式的两个信息，IP地址 已被分配给不同类型的网络中的个人用户站以及分配给个人用户站的IP地址的信息; 和（b）通过使用IP地址信息将不同类型的网络所使用的IP地址注册为个人用户站的IP地址。

    Silicon-rich silicon nitrides as etch stops in MEMS manufacture
    6.
    发明授权
    Silicon-rich silicon nitrides as etch stops in MEMS manufacture 失效
    在MEMS制造中，富硅硅氮化物作为蚀刻停止

    公开(公告)号：US07382515B2

    公开(公告)日：2008-06-03

    申请号：US11334990

    申请日：2006-01-18

    申请人： Wonsuk Chung ,  Steve Zee ,  Teruo Sasagawa

    发明人： Wonsuk Chung ,  Steve Zee ,  Teruo Sasagawa

    IPC分类号： G02B26/00 ,  G02B26/08 ,  G02B27/00 ,  H01L21/302

    CPC分类号： B81C1/00801 ,  B81B2201/047 ,  B81C2201/014 ,  G02B26/001 ,  Y10T428/31678

    摘要： The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and or template layer. The etch stop layer may include silicon-rich silicon nitride.

    摘要翻译： 通过在牺牲层和电极之间采用蚀刻停止层来改善诸如干涉式调制器之类的MEMS器件的制造。 蚀刻停止可以减少对牺牲层和电极的不希望的过蚀刻。 蚀刻停止层也可以用作阻挡层，缓冲层和/或模板层。 蚀刻停止层可以包括富硅的氮化硅。

    MEMS DEVICE AND INTERCONNECTS FOR SAME
    9.
    发明申请
    MEMS DEVICE AND INTERCONNECTS FOR SAME 失效
    MEMS器件及其相互连接

    公开(公告)号：US20100202038A1

    公开(公告)日：2010-08-12

    申请号：US12764454

    申请日：2010-04-21

    申请人： Wonsuk Chung ,  SuryaPrakash Ganti ,  Stephen Zee

    发明人： Wonsuk Chung ,  SuryaPrakash Ganti ,  Stephen Zee

    IPC分类号： G02B26/00 ,  B05D5/12 ,  C23F1/02

    CPC分类号： G02B26/001

    摘要： A microelectromechanical systems device having an electrical interconnect connected to at least one of an electrode and a movable layer within the device. At least a portion of the electrical interconnect is formed from the same material as a movable layer of the device. A thin film, particularly formed of molybdenum, is provided underneath the electrical interconnect. The movable layer preferably comprises aluminum.

    摘要翻译： 一种微机电系统装置，其具有连接到所述装置内的电极和可移动​​层中的至少一个的电互连。 电互连的至少一部分由与器件的可移动层相同的材料形成。 特别是由钼形成的薄膜被提供在电互连下面。 可移动层优选包括铝。