公开(公告)号：US20180026156A1

公开(公告)日：2018-01-25

申请号：US15723720

申请日：2017-10-03

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jie ZHANG ,  Xueliang ZHU ,  Chengxiao DU ,  Jianming LIU ,  Chen-ke HSU

IPC: H01L33/16 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/16 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/325

Abstract: A light-emitting diode (LED) chip includes from bottom to up: a conductive substrate, a p-type nitride layer, an active layer, an n-type recovery layer, an n-type nitride layer and an n electrode, wherein, the n-type nitride layer has a nitride polarity crystal and a gallium polarity crystal, and the surfaces of the nitride polarity and the gallium polarity regions appear different in height, the n-type recovery layer surface approximate to the n-type nitride layer has consistent mixed polarity with the n-type nitride layer, and the surface far from the n-type nitride layer is a connected gallium polarity surface.

公开(公告)号：US20180138358A1

公开(公告)日：2018-05-17

申请号：US15849566

申请日：2017-12-20

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jie ZHANG ,  Xiangxu FENG ,  Chengxiao DU ,  Jianming LIU ,  Chen-ke HSU

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32

Abstract: A light-emitting diode includes from bottom to up: a substrate, a first-conductive type semiconductor layer, a super lattice, a multi-quantum well layer and a second-conductive type semiconductor layer. At least one layer of granular medium layer is inserted in the super lattice. The granular medium layer is used for forming V pits with different widths and depths in the super lattice. The multi-quantum well layer fills up the V pits and is over the top surface of the super lattice. The number of micro-particle generations, positions and densities can be adjusted by introducing granular medium layers and controlling the number of layers, position and growth conditions during super lattice growth process, to ensure V pits of different depths and densities. This can change hole injection effect, effectively improve hole injection efficiency and distribution uniformity in all quantum wells, thus improving LED light-emitting efficiency.

公开(公告)号：US20180138332A1

公开(公告)日：2018-05-17

申请号：US15870949

申请日：2018-01-13

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Chengxiao DU ,  Jiansen ZHENG ,  Jie ZHANG ,  Chen-ke HSU

IPC: H01L31/0236 ,  H01L31/18 ,  H01L31/0304

CPC classification number: H01L31/02366 ,  B82Y40/00 ,  B82Y99/00 ,  H01L31/03044 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/16 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  Y02E10/50 ,  Y02P70/521

Abstract: A semi-polar LED epitaxial structure includes, from bottom to up: a sapphire substrate; a semiconductor bottom layer structure; and a semiconductor functional layer; wherein: a surface of the semiconductor bottom structure has V pits; and a side of the V pits is a semi-polar surface, corresponding to (1-101) family of crystal planes. A fabrication method includes: providing a sapphire substrate; growing a semiconductor bottom structure over the sapphire substrate to form V pits on a surface, wherein a side of the V pits is a semi-polar surface, corresponding to (1-101) family of crystal planes; and growing a semiconductor functional layer over the semi-polar surface of the semiconductor bottom structure.

公开(公告)号：US20180122988A1

公开(公告)日：2018-05-03

申请号：US15847844

申请日：2017-12-19

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Jie ZHANG ,  Xueliang ZHU ,  Chengxiao DU ,  Jianming LIU ,  Chen-ke HSU

IPC: H01L33/14 ,  H01L33/32 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/14 ,  H01L33/007 ,  H01L33/06 ,  H01L33/24 ,  H01L33/32

Abstract: A light-emitting diode (LED) epitaxial structure includes, from bottom to up, a substrate, a first conductive type semiconductor layer, a super lattice, a multi-quantum well layer with V pits, a hole injection layer and a second conductive type semiconductor layer. The hole injection layer appears in the shape of dual hexagonal pyramid, which fills up the V pits and embeds in the second conductive type semiconductor layer. Various embodiments of the present disclosures can effectively reduce point defect density and dislocation density of semiconductor material and effectively enlarge hole injection area and improves hole injection efficiency.