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Patent Agency Ranking
公开(公告)号：US20180138364A1
公开(公告)日：2018-05-17
申请号：US15853913
申请日：2017-12-25
Inventor： Jie ZHANG , Jianming LIU , Xueliang ZHU , Chen-ke HSU
CPC classification number: H01L33/14 , H01L27/156 , H01L33/0075 , H01L33/06 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/46 , H01L2933/0016 , H01L2933/0025
Abstract: A light-emitting diode includes a conductive mask layer planted over a substrate surface. An epitaxial laminated layer is formed over the conductive mask layer via epitaxial growth; and a current channel is formed over the epitaxial laminated layer; during injection, current is firstly conducted to the conductive mask layer through the current channel, and then to the epitaxial laminated layer after horizontal spreading over the conductive mask layer, which effectively improves current spreading uniformity and reduces working voltage of device. Meanwhile, the conductive mask layer reflects light to further improve extraction efficiency and light-emitting luminance.
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公开(公告)号：US20180026156A1
公开(公告)日：2018-01-25
申请号：US15723720
申请日：2017-10-03
Inventor： Jie ZHANG , Xueliang ZHU , Chengxiao DU , Jianming LIU , Chen-ke HSU
CPC classification number: H01L33/16 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L33/325
Abstract: A light-emitting diode (LED) chip includes from bottom to up: a conductive substrate, a p-type nitride layer, an active layer, an n-type recovery layer, an n-type nitride layer and an n electrode, wherein, the n-type nitride layer has a nitride polarity crystal and a gallium polarity crystal, and the surfaces of the nitride polarity and the gallium polarity regions appear different in height, the n-type recovery layer surface approximate to the n-type nitride layer has consistent mixed polarity with the n-type nitride layer, and the surface far from the n-type nitride layer is a connected gallium polarity surface.
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公开(公告)号：US20180122988A1
公开(公告)日：2018-05-03
申请号：US15847844
申请日：2017-12-19
Inventor： Jie ZHANG , Xueliang ZHU , Chengxiao DU , Jianming LIU , Chen-ke HSU
CPC classification number: H01L33/14 , H01L33/007 , H01L33/06 , H01L33/24 , H01L33/32
Abstract: A light-emitting diode (LED) epitaxial structure includes, from bottom to up, a substrate, a first conductive type semiconductor layer, a super lattice, a multi-quantum well layer with V pits, a hole injection layer and a second conductive type semiconductor layer. The hole injection layer appears in the shape of dual hexagonal pyramid, which fills up the V pits and embeds in the second conductive type semiconductor layer. Various embodiments of the present disclosures can effectively reduce point defect density and dislocation density of semiconductor material and effectively enlarge hole injection area and improves hole injection efficiency.
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公开(公告)号：US20170133557A1
公开(公告)日：2017-05-11
申请号：US15417227
申请日：2017-01-27
Inventor： Zhibai ZHONG , Wen-yu LIN , Yen-chih CHIANG , Jianming LIU , Chia-en LEE , Su-hui LIN , Chen-ke HSU
CPC classification number: H01L33/385 , H01L33/0075 , H01L33/38 , H01L33/486 , H01L33/62 , H01L33/641 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066 , H01L2933/0075
Abstract: A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.
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公开(公告)号：US20180138358A1
公开(公告)日：2018-05-17
申请号：US15849566
申请日：2017-12-20
Inventor： Jie ZHANG , Xiangxu FENG , Chengxiao DU , Jianming LIU , Chen-ke HSU
CPC classification number: H01L33/06 , H01L33/007 , H01L33/025 , H01L33/04 , H01L33/10 , H01L33/22 , H01L33/32
Abstract: A light-emitting diode includes from bottom to up: a substrate, a first-conductive type semiconductor layer, a super lattice, a multi-quantum well layer and a second-conductive type semiconductor layer. At least one layer of granular medium layer is inserted in the super lattice. The granular medium layer is used for forming V pits with different widths and depths in the super lattice. The multi-quantum well layer fills up the V pits and is over the top surface of the super lattice. The number of micro-particle generations, positions and densities can be adjusted by introducing granular medium layers and controlling the number of layers, position and growth conditions during super lattice growth process, to ensure V pits of different depths and densities. This can change hole injection effect, effectively improve hole injection efficiency and distribution uniformity in all quantum wells, thus improving LED light-emitting efficiency.
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