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公开(公告)号：US11721789B2
公开(公告)日：2023-08-08
申请号：US17806528
申请日：2022-06-13
Inventor： Jiangbin Zeng , Anhe He , Ling-yuan Hong , Kang-Wei Peng , Su-hui Lin , Chia-Hung Chang
CPC classification number: H01L33/22 , H01L33/005 , H01L33/10 , H01L33/382 , H01L2933/0016
Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.
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公开(公告)号：US10825957B1
公开(公告)日：2020-11-03
申请号：US16887877
申请日：2020-05-29
Inventor： Gaolin Zheng , Hou-Jun Wu , Anhe He , Shiwei Liu , Kang-Wei Peng , Su-Hui Lin , Chia-Hung Chang
Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance; a second electrode disposed over and electrically coupled to the second semiconductor layer; a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and a fourth electrode coupled to the second electrode.
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Patent Agency Ranking
公开(公告)号：US11862752B2
公开(公告)日：2024-01-02
申请号：US17366268
申请日：2021-07-02
Inventor： Qing Wang , Dazhong Chen , Sheng-Hsien Hsu , Ling-yuan Hong , Kang-Wei Peng , Su-hui Lin , Chia-Hung Chang
CPC classification number: H01L33/10 , H01L33/0095 , H01L33/12 , H01L33/24 , H01L2933/0058
Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.
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公开(公告)号：US12087885B2
公开(公告)日：2024-09-10
申请号：US17987001
申请日：2022-11-15
Inventor： Su-hui Lin , Feng Wang , Ling-yuan Hong , Sheng-Hsien Hsu , Sihe Chen , Dazhong Chen , Kang-Wei Peng , Chia-Hung Chang
CPC classification number: H01L33/46 , H01L33/387 , H01L33/405 , H01L33/145 , H01L33/382 , H01L2933/0016 , H01L2933/0025
Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.
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公开(公告)号：US11532769B2
公开(公告)日：2022-12-20
申请号：US16931056
申请日：2020-07-16
Inventor： Su-hui Lin , Feng Wang , Ling-yuan Hong , Sheng-Hsien Hsu , Sihe Chen , Dazhong Chen , Kang-Wei Peng , Chia-Hung Chang
Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.
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公开(公告)号：US12294037B2
公开(公告)日：2025-05-06
申请号：US17450630
申请日：2021-10-12
Inventor： Gong Chen , Su-Hui Lin , Sheng-Hsien Hsu , Kang-Wei Peng , Ling-Yuan Hong , Minyou He , Chia-Hung Chang
Abstract: A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.
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公开(公告)号：US10707380B2
公开(公告)日：2020-07-07
申请号：US16147763
申请日：2018-09-30
Inventor： Gaolin Zheng , Hou-Jun Wu , Anhe He , Shiwei Liu , Kang-Wei Peng , Su-Hui Lin , Chia-Hung Chang
Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.
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