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公开(公告)号：US12087885B2
公开(公告)日：2024-09-10
申请号：US17987001
申请日：2022-11-15
Inventor： Su-hui Lin , Feng Wang , Ling-yuan Hong , Sheng-Hsien Hsu , Sihe Chen , Dazhong Chen , Kang-Wei Peng , Chia-Hung Chang
CPC classification number: H01L33/46 , H01L33/387 , H01L33/405 , H01L33/145 , H01L33/382 , H01L2933/0016 , H01L2933/0025
Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.
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公开(公告)号：US11532769B2
公开(公告)日：2022-12-20
申请号：US16931056
申请日：2020-07-16
Inventor： Su-hui Lin , Feng Wang , Ling-yuan Hong , Sheng-Hsien Hsu , Sihe Chen , Dazhong Chen , Kang-Wei Peng , Chia-Hung Chang
Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.
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公开(公告)号：US11721789B2
公开(公告)日：2023-08-08
申请号：US17806528
申请日：2022-06-13
Inventor： Jiangbin Zeng , Anhe He , Ling-yuan Hong , Kang-Wei Peng , Su-hui Lin , Chia-Hung Chang
CPC classification number: H01L33/22 , H01L33/005 , H01L33/10 , H01L33/382 , H01L2933/0016
Abstract: A light-emitting diode (LED) device includes a substrate, an epitaxial layered structure disposed on the substrate, a current-spreading layer disposed on the epitaxial layered structure, a current-blocking unit disposed on the current-spreading layer, and a distributed Bragg reflector. The epitaxial layered structure, the current-spreading layer and the current-blocking unit are covered by the distributed Bragg reflector. One of the current-spreading layer, the current-blocking unit, and a combination thereof has a patterned rough structure. A method for manufacturing the LED device is also disclosed.
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Patent Agency Ranking
公开(公告)号：US10825957B1
公开(公告)日：2020-11-03
申请号：US16887877
申请日：2020-05-29
Inventor： Gaolin Zheng , Hou-Jun Wu , Anhe He , Shiwei Liu , Kang-Wei Peng , Su-Hui Lin , Chia-Hung Chang
Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance; a second electrode disposed over and electrically coupled to the second semiconductor layer; a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and a fourth electrode coupled to the second electrode.
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公开(公告)号：US10014436B2
公开(公告)日：2018-07-03
申请号：US15424942
申请日：2017-02-06
Inventor： Cheng-Hung Lee , Sheng-Wei Chou , Chi-Hung Lin , Chan-Chan Ling , Chia-Hung Chang
CPC classification number: H01L33/007 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
Abstract: A method for manufacturing a light emitting element includes: a GaN layer is formed on an AlN-deposited plain or patterned substrate, and the stress between different materials is changed and buffered through thermal treatment of annealing under H2 atmosphere or under H2 and NH3 mixed atmosphere, thus eliminating epitaxial wafer warp caused by such stress and improving epitaxial quality and light-emitting efficiency of the light-emitting element.
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公开(公告)号：US11862752B2
公开(公告)日：2024-01-02
申请号：US17366268
申请日：2021-07-02
Inventor： Qing Wang , Dazhong Chen , Sheng-Hsien Hsu , Ling-yuan Hong , Kang-Wei Peng , Su-hui Lin , Chia-Hung Chang
CPC classification number: H01L33/10 , H01L33/0095 , H01L33/12 , H01L33/24 , H01L2933/0058
Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.
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公开(公告)号：US12294037B2
公开(公告)日：2025-05-06
申请号：US17450630
申请日：2021-10-12
Inventor： Gong Chen , Su-Hui Lin , Sheng-Hsien Hsu , Kang-Wei Peng , Ling-Yuan Hong , Minyou He , Chia-Hung Chang
Abstract: A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.
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公开(公告)号：US10707380B2
公开(公告)日：2020-07-07
申请号：US16147763
申请日：2018-09-30
Inventor： Gaolin Zheng , Hou-Jun Wu , Anhe He , Shiwei Liu , Kang-Wei Peng , Su-Hui Lin , Chia-Hung Chang
Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.
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