公开(公告)号：US20180026155A1

公开(公告)日：2018-01-25

申请号：US15723248

申请日：2017-10-03

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Binbin LI ,  Yi-hsiang HSU ,  Jingjing WEI ,  Yu ZHOU ,  Zhen WANG ,  Kai XU ,  Chia-hung CHANG

IPC: H01L33/10 ,  H01L33/20 ,  H01L33/00

CPC classification number: H01L33/10 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32

Abstract: A patterned sapphire substrate has a first surface and a second surface opposite to each other, in which, the first surface of the substrate is formed by arranging a plurality of interspaced patterns, wherein, the patterns have a top surface, a bottom surface and a plurality of side surfaces and at least one concave region sandwiched between the adjacent side surfaces and the top surface, where, depth and width of the concave region gradually decrease from the top to the bottom of the pattern. The concave region on the pattern surface of the patterned sapphire substrate enlarges light reflection area, thus improving light extraction efficiency of the patterned sapphire substrate.

公开(公告)号：US20170263812A1

公开(公告)日：2017-09-14

申请号：US15607461

申请日：2017-05-27

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Chia-hung CHANG ,  Gong CHEN ,  Su-hui LIN ,  Kang-wei PENG ,  Sheng-hsien HSU ,  Chuan-gui LIU ,  Xiao-xiong LIN ,  Yu ZHOU ,  Jing-jing WEI ,  Jing HUANG

IPC: H01L33/02 ,  H01L27/15 ,  H01L33/60 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/025 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/60

Abstract: An LED fabrication method includes forming impurity release holes by focusing a laser at the substrate back surface, and forming invisible explosion points by focusing a laser inside the substrate on positions corresponding to the impurity release holes; communicating the impurity release holes with the invisible explosion points to release impurities generated during forming of the invisible explosion points from the substrate through the impurity release holes, thereby avoiding low external quantum efficiency resulting from adherence of impurities to the side wall of the invisible explosion points. By focusing on a position with 10 μm˜40 ˜m inward from the substrate back side, adjusting laser energy and frequency to burn holes inside the substrate to penetrate and expose the substrate back surface, thereby effectively removing by-products, and reducing light absorption by such by-products, light extraction from a side wall of the LED can also be improved and light extraction efficiency is enhanced.