SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
    半导体结构及其制造方法

    公开(公告)号:US20160329283A1

    公开(公告)日:2016-11-10

    申请号:US15140289

    申请日:2016-04-27

    Applicant: XINTEC INC.

    Abstract: A semiconductor structure includes a first substrate, a second substrate, a dam layer, a photoresist layer, and a conductive layer. The first substrate has a conductive pad. The second substrate has a through via, a sidewall surface surrounding the through via, a first surface, and a second surface opposite to the first surface. The through via penetrates through the first and second surfaces. The conductive pad is aligned with the through via. The dam layer is located between the first substrate and the second surface. The dam layer protrudes toward the through via. The photoresist layer is located on the first surface, the sidewall surface, the dam layer protruding toward the through via, and between the conductive pad and the dam layer protruding toward the through via. The conductive layer is located on the photoresist layer and the conductive pad.

    Abstract translation: 半导体结构包括第一基板,第二基板,阻挡层,光致抗蚀剂层和导电层。 第一基板具有导电垫。 第二基板具有通孔,围绕通孔的侧壁表面,第一表面和与第一表面相对的第二表面。 通孔穿过第一和第二表面。 导电垫与通孔对齐。 坝层位于第一基板和第二表面之间。 坝层朝向通孔突出。 光致抗蚀剂层位于第一表面上,侧壁表面,阻挡层朝向通孔突出,并且在导电垫和阻挡层之间朝向通孔突出。 导电层位于光致抗蚀剂层和导电垫上。

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