公开(公告)号：US08134329B2

公开(公告)日：2012-03-13

申请号：US11735035

申请日：2007-04-13

Applicant: Xavier de Frutos

Inventor： Xavier de Frutos

IPC: H02P27/04

CPC classification number: H02P27/04 ,  H02M1/44 ,  H02M3/1588 ,  H02P2201/11 ,  Y02B70/1466

Abstract: A buck converter for use in controlling a motor in accordance with an embodiment of the present invention includes a power input operable for connection to a DC power supply, a switch for selectively connecting the motor to the power supply, a pulse width modulation controller operable to provide a pulse width modulation signal to the switch, wherein the switch connects the motor to the power supply based on the pulse width modulation signal, and a voltage shifting capacitor connected across the switch and in series with a diode. The buck converter may include a shift control device operable to control a voltage across the voltage shifting capacitor.

Abstract translation: 根据本发明的实施例的用于控制电动机的降压转换器包括可操作用于连接到DC电源的电源输入端，用于选择性地将电动机连接到电源的开关，可用于 向开关提供脉宽调制信号，其中开关基于脉宽调制信号将电动机连接到电源，以及连接在开关上并与二极管串联的电压移动电容器。 降压转换器可以包括可操作以控制跨越电压转换电容器的电压的变速控制装置。

公开(公告)号：US06856177B1

公开(公告)日：2005-02-15

申请号：US10625032

申请日：2003-07-22

Applicant: Xavier de Frutos ,  Bruno C. Nadd ,  Vincent Thiery ,  Chik Yam Lee

Inventor： Xavier de Frutos ,  Bruno C. Nadd ,  Vincent Thiery ,  Chik Yam Lee

IPC: H01L20060101 ,  H03B1/00 ,  H03K3/00 ,  H03K17/06 ,  H03K19/00

CPC classification number: H03K17/063

Abstract: A power switching circuit comprising a power semiconductor switching device, a charge pump circuit having a control input to control whether it is on or off and a charge pump output, the charge pump output being coupled to a control terminal of the power semiconductor switching device, a bootstrap power supply for supplying power to driver circuitry for the power semiconductor switching device, the bootstrap power supply comprising a bootstrap capacitor coupled to a charging current source, the bootstrap power supply providing power to the driver circuitry when the power semiconductor switching device is being switched by the driver circuitry in a pulsed mode, and the charge pump supplying a control voltage to turn on the power semiconductor switching device and maintain it on when the power switching semiconductor device is to be maintained on continuously.

Abstract translation: 一种功率开关电路，包括功率半导体开关器件，具有用于控制其是否导通的控制输入的电荷泵电路和电荷泵输出，所述电荷泵输出耦合到所述功率半导体开关器件的控制端子， 用于向功率半导体开关装置的驱动器电路供电的自举电源，所述自举电源包括耦合到充电电流源的自举电容器，所述自举电源在所述功率半导体开关装置正在被驱动时向所述驱动器电路提供电力 通过驱动电路以脉冲模式切换，并且电荷泵提供控制电压以接通功率半导体开关器件，并且当功率开关半导体器件将被连续地保持时保持接通。

公开(公告)号：US07465610B2

公开(公告)日：2008-12-16

申请号：US11503792

申请日：2006-08-14

Applicant: Bruno C. Nadd ,  Vincent Thiery ,  Xavier de Frutos ,  Chik Yam Lee

Inventor： Bruno C. Nadd ,  Vincent Thiery ,  Xavier de Frutos ,  Chik Yam Lee

IPC: H01L21/335 ,  H01L31/112

CPC classification number: H02H7/0838 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02P7/04 ,  H02P2203/07 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A fully protected H-bridge for a d-c motor consists of two high side MOSFETs and a control and logic IC on a first conductive heat sink all within a first package and two discrete low side MOSFETs. The entire bridge is controlled by the IC. Shoot thru protection is provided for each leg, and a PMW soft start sequence is provided through the control of the low side MOSFETs, programed by an external, chargeable RC circuit. Input signals to the high side MOSFETs select the operation modes. Protective circuits are provided for short circuit current and over current conditions. Sleep mode and braking/non braking control is also provided.

Abstract translation: 用于d-c电机的完全受保护的H桥由两个高边MOSFET组成，第一导电散热器上的控制和逻辑IC都在第一封装和两个分立的低侧MOSFET内。 整个桥梁由IC控制。 为每条支路提供射击保护，通过控制低端MOSFET提供PMW软起动序列，由外部可充电RC电路编程。 输入高边MOSFET的信号选择工作模式。 为短路电流和过流条件提供保护电路。 还提供睡眠模式和制动/非制动控制。

公开(公告)号：US20070069289A1

公开(公告)日：2007-03-29

申请号：US11549361

申请日：2006-10-13

Applicant: Bruno Nadd ,  Xavier de Frutos ,  Andre Mourrier

Inventor： Bruno Nadd ,  Xavier de Frutos ,  Andre Mourrier

IPC: H01L29/76

CPC classification number: H02M1/08 ,  H02M1/088 ,  H02M3/33592 ,  Y02B70/1475

Abstract: A synchronous rectifier comprising a MOSFET device, and a gate driver for driving the gate of the MOSFET device, the MOSFET device comprising first and second MOSFET transistors coupled with their drain-source paths in parallel to receive an alternating current waveform for rectification by the drain-source paths of the MOSFET transistors, the first transistor having a low Rdson and the second transistor having a high Rdson whereby the apparent Rdson of the MOSFET device is increased when the current through the MOSFET device is below a threshold thereby enabling zero crossing detection.

公开(公告)号：US06906487B2

公开(公告)日：2005-06-14

申请号：US10348682

申请日：2003-01-21

Applicant: Xavier de Frutos

Inventor： Xavier de Frutos

IPC: H02H7/085 ,  H02H7/093 ,  G05D3/00 ,  H02P3/00 ,  H02P7/00

CPC classification number: H02H7/0851 ,  H02H7/093

Abstract: An antipinch circuit prevents the motor driven closure of an automotive window if a soft obstacle is compressed between the window and the top of the door frame, and the window is opened in response to the sensing of the obstacle. The circuit measures the motor torque (by measuring motor current) and the motor shaft speed (by measuring motor back EMF). The torque and motor speed are compared to “signatures” of these values in the case of the window closing normally against the top of the door frame, or against an obstacle, and either stopping or reversing the motor rotation accordingly.

Abstract translation: 如果在窗户和门框的顶部之间压缩了软障碍物，则响应于障碍物的感测而打开窗户，止反电路可以防止汽车窗的马达驱动关闭。 电路测量电机转矩（通过测量电机电流）和电机轴转速（通过测量电机反电动势）。 在窗口正常关闭门框顶部或障碍物的情况下，扭矩和电机速度与这些值的“签名”进行比较，并且相应地停止或反转电机旋转。

公开(公告)号：US06747300B2

公开(公告)日：2004-06-08

申请号：US10091194

申请日：2002-03-04

Applicant: Bruno C. Nadd ,  Vincent Thiery ,  Xavier de Frutos ,  Chik Yam Lee

Inventor： Bruno C. Nadd ,  Vincent Thiery ,  Xavier de Frutos ,  Chik Yam Lee

IPC: H01L2976

CPC classification number: H02H7/0838 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02P7/04 ,  H02P2203/07 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A fully protected H-bridge for a d-c motor consists of two high side MOSFETs and a control and logic IC on a first conductive heat sink all within a first package and two discrete low side MOSFETs. The entire bridge is controlled by the IC. Shoot thru protection is provided for each leg, and a PMW soft start sequence is provided through the control of the low side MOSFETs, programed by an external, chargeable RC circuit. Input signals to the high side MOSFETs select the operation modes. Protective circuits are provided for short circuit current and over current conditions. Sleep mode and braking/non braking control is also provided.

Abstract translation: 用于d-c电机的完全受保护的H桥由两个高边MOSFET组成，第一导电散热器上的控制和逻辑IC都在第一封装和两个分立的低侧MOSFET内。 整个桥梁由IC控制。 为每条支路提供射击保护，通过控制低端MOSFET提供PMW软起动序列，由外部可充电RC电路编程。 输入高边MOSFET的信号选择工作模式。 为短路电流和过流条件提供保护电路。 还提供睡眠模式和制动/非制动控制。

公开(公告)号：US07948296B2

公开(公告)日：2011-05-24

申请号：US11549361

申请日：2006-10-13

Applicant: Bruno Charles Nadd ,  Xavier de Frutos ,  Andre Mourrier

Inventor： Bruno Charles Nadd ,  Xavier de Frutos ,  Andre Mourrier

IPC: H03K17/687

CPC classification number: H02M1/08 ,  H02M1/088 ,  H02M3/33592 ,  Y02B70/1475

Abstract: A synchronous rectifier comprising a MOSFET device, and a gate driver for driving the gate of the MOSFET device, the MOSFET device comprising first and second MOSFET transistors coupled with their drain-source paths in parallel to receive an alternating current waveform for rectification by the drain-source paths of the MOSFET transistors, the first transistor having a low Rdson and the second transistor having a high Rdson whereby the apparent Rdson of the MOSFET device is increased when the current through the MOSFET device is below a threshold thereby enabling zero crossing detection.

Abstract translation: 包括MOSFET器件的同步整流器和用于驱动MOSFET器件的栅极的栅极驱动器，MOSFET器件包括与其漏极 - 源极路径并联耦合的第一和第二MOSFET晶体管，以接收交流电流波形，以由漏极 MOSFET晶体管的源极路径，第一晶体管具有低Rdson，第二晶体管具有高Rdson，由此当通过MOSFET器件的电流低于阈值时，MOSFET器件的视在Rdson增加，从而实现过零检测。

公开(公告)号：US20090060479A1

公开(公告)日：2009-03-05

申请号：US11735035

申请日：2007-04-13

Applicant: Xavier de Frutos

Inventor： Xavier de Frutos

IPC: H02P7/29

CPC classification number: H02P27/04 ,  H02M1/44 ,  H02M3/1588 ,  H02P2201/11 ,  Y02B70/1466

Abstract: A buck converter for use in controlling a motor in accordance with an embodiment of the present invention includes a power input operable for connection to a DC power supply, a switch for selectively connecting the motor to the power supply, a pulse width modulation controller operable to provide a pulse width modulation signal to the switch, wherein the switch connects the motor to the power supply based on the pulse width modulation signal, and a voltage shifting capacitor connected across the switch and in series with a diode. The buck converter may include a shift control device operable to control a voltage across the voltage shifting capacitor.

Abstract translation: 根据本发明的实施例的用于控制电动机的降压转换器包括可操作用于连接到DC电源的电源输入端，用于选择性地将电动机连接到电源的开关，可用于 向开关提供脉宽调制信号，其中开关基于脉宽调制信号将电动机连接到电源，以及连接在开关上并与二极管串联的电压移动电容器。 降压转换器可以包括可操作以控制跨越电压转换电容器的电压的变速控制装置。

公开(公告)号：US07183834B2

公开(公告)日：2007-02-27

申请号：US10683608

申请日：2003-10-10

Applicant: Bruno Charles Nadd ,  Xavier de Frutos ,  Andre Mourrier

Inventor： Bruno Charles Nadd ,  Xavier de Frutos ,  Andre Mourrier

IPC: H03K17/62

CPC classification number: H02M1/08 ,  H02M1/088 ,  H02M3/33592 ,  Y02B70/1475

Abstract: A synchronous rectifier comprising a MOSFET device, and a gate driver for driving the gate of the MOSFET device, the MOSFET device comprising first and second MOSFET transistors coupled with their drain-source paths in parallel to receive an alternating current waveform for rectification by the drain-source paths of the MOSFET transistors, the first transistor having a low Rdson and the second transistor having a high Rdson whereby the apparent Rdson of the MOSFET device is increased when the current through the MOSFET device is below a threshold thereby enabling zero crossing detection.

Abstract translation: 包括MOSFET器件的同步整流器和用于驱动MOSFET器件的栅极的栅极驱动器，MOSFET器件包括与其漏极 - 源极路径并联耦合的第一和第二MOSFET晶体管，以接收交流电流波形，以由漏极 MOSFET晶体管的源极路径，第一晶体管具有低Rdson，第二晶体管具有高Rdson，由此当通过MOSFET器件的电流低于阈值时，MOSFET器件的视在Rdson增加，从而实现过零检测。

公开(公告)号：US07115922B2

公开(公告)日：2006-10-03

申请号：US10819862

申请日：2004-04-07

Applicant: Bruno C Nadd ,  Vincent Thiery ,  Xavier de Frutos ,  Chik Yam Lee

Inventor： Bruno C Nadd ,  Vincent Thiery ,  Xavier de Frutos ,  Chik Yam Lee

IPC: H01L29/76

CPC classification number: H02H7/0838 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02P7/04 ,  H02P2203/07 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A fully protected H-bridge for a d-c motor consists of two high side MOSFETs and a control and logic IC on a first conductive heat sink all within a first package and two discrete low side MOSFETs. The entire bridge is controlled by the IC. Shoot thru protection is provided for each leg, and a PMW soft start sequence is provided through the control of the low side MOSFETs, programed by an external, chargeable RC circuit. Input signals to the high side MOSFETs select the operation modes. Protective circuits are provided for short circuit current and over current conditions. Sleep mode and braking/non braking control is also provided.

Abstract translation: 用于d-c电机的完全受保护的H桥由两个高边MOSFET组成，第一导电散热器上的控制和逻辑IC都在第一封装和两个分立的低侧MOSFET内。 整个桥梁由IC控制。 为每条支路提供射击保护，通过控制低端MOSFET提供PMW软起动序列，由外部可充电RC电路编程。 输入高边MOSFET的信号选择工作模式。 为短路电流和过流条件提供保护电路。 还提供睡眠模式和制动/非制动控制。