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    Amorphous tin-cadmium oxide films and the production thereof
    3.
    发明授权
    Amorphous tin-cadmium oxide films and the production thereof 有权
    无定形锡 - 氧化镉膜及其制备

    公开(公告)号：US08568828B2

    公开(公告)日：2013-10-29

    申请号：US12705465

    申请日：2010-02-12

    申请人： Xiaonan Li ,  Timothy A. Gessert

    发明人： Xiaonan Li ,  Timothy A. Gessert

    IPC分类号： C23C16/00

    CPC分类号： H01B1/08 ,  H01L31/022466 ,  H01L31/1884 ,  Y02E10/50

    摘要： A tin-cadmium oxide film having an amorphous structure and a ratio of tin atoms to cadmium atoms of between 1:1 and 3:1. The tin-cadmium oxide film may have an optical band gap of between 2.7 eV and 3.35 eV. The film may also have a charge carrier concentration of between 1×1020 cm−3 and 2×1020 cm−3. The tin cadmium oxide film may also exhibit a Hall mobility of between 40 cm2V−1 s−1 and 60 cm2V−1 s−1. Also disclosed is a method of producing an amorphous tin-cadmium oxide film as described and devices using same.

    摘要翻译： 具有无定形结构，锡原子与镉原子的比例在1:1至3:1之间的氧化锡 - 氧化锡膜。 锡 - 氧化镉膜的光学带隙可以在2.7eV至3.35eV之间。 膜的电荷载流子浓度也可以在1×1020cm-3和2×1020cm-3之间。 锡镉氧化物膜也可以表现出40cm 2·V -1·s -1和60cm 2·V -1 s -1之间的霍尔迁移率。 还公开了如上所述的制造非晶态氧化镉氧化物膜的方法和使用其的器件。

    High Permittivity Transparent Films
    4.
    发明申请
    High Permittivity Transparent Films 审中-公开
    高介电常数透明膜

    公开(公告)号：US20120107491A1

    公开(公告)日：2012-05-03

    申请号：US13344185

    申请日：2012-01-05

    申请人： Xiaonan Li ,  James Burst ,  Timothy A. Gessert

    发明人： Xiaonan Li ,  James Burst ,  Timothy A. Gessert

    IPC分类号： B05D5/12 ,  H01B1/02 ,  H01B1/00

    CPC分类号： C23C16/405 ,  C03C17/001

    摘要： Thin films containing a transparent conducting oxide and a high permittivity material are disclosed. Exemplary thin films may exhibit increased transmission in the visible-to-near infrared (vis-NIR) spectrum without a decrease in electrical conductivity compared to the thin film without the high permittivity material. Methods for making thin films having enhanced optical properties without substantially decreased electrical quality are also disclosed.

    摘要翻译： 公开了含有透明导电氧化物和高介电常数材料的薄膜。 与没有高介电常数材料的薄膜相比，示例性的薄膜可能在可见光到近红外（vis-NIR）光谱中表现出增加的透射率，而不降低导电性。 还公开了制造具有增强的光学特性而没有显着降低的电气质量的薄膜的方法。

    FLUORINE COMPOUNDS FOR DOPING CONDUCTIVE OXIDE THIN FILMS
    6.
    发明申请
    FLUORINE COMPOUNDS FOR DOPING CONDUCTIVE OXIDE THIN FILMS 失效
    用于掺杂导电氧化物薄膜的氟化合物

    公开(公告)号：US20110070371A1

    公开(公告)日：2011-03-24

    申请号：US12884490

    申请日：2010-09-17

    申请人： Tim Gessert ,  Xiaonan Li ,  Teresa M. Barnes ,  Robert Torres, JR. ,  Carrie L. Wyse

    发明人： Tim Gessert ,  Xiaonan Li ,  Teresa M. Barnes ,  Robert Torres, JR. ,  Carrie L. Wyse

    IPC分类号： C23C16/08

    CPC分类号： C23C16/45523 ,  C23C16/407 ,  C23C16/50

    摘要： Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

    摘要翻译： 描述了通过化学气相沉积在衬底上形成导电性氟掺杂金属氧化物层的方法。 所述方法可以包括在处理室中加热衬底，并将含金属的前体和含氟前体引入到处理室中。 所述方法还可以包括向处理室中加入含氧前体。 使前体反应以在衬底上沉积氟掺杂的金属氧化物层。 方法还可以包括通过等离子体辅助化学气相沉积形成导电性氟掺杂金属氧化物层。 这些方法可以包括在处理室中提供衬底，并将含金属的前体和含氟前体引入处理室。 可以形成包括来自含金属的前体和含氟前体的物质的等离子体。 该物质可以反应以在衬底上沉积氟掺杂的金属氧化物层。

    Fluorine compounds for doping conductive oxide thin films
    7.
    发明授权
    Fluorine compounds for doping conductive oxide thin films 失效
    用于掺杂导电氧化物薄膜的氟化合物

    公开(公告)号：US08425978B2

    公开(公告)日：2013-04-23

    申请号：US12884490

    申请日：2010-09-17

    申请人： Tim Gessert ,  Xiaonan Li ,  Teresa M. Barnes ,  Robert Torres, Jr. ,  Carrie L. Wyse

    发明人： Tim Gessert ,  Xiaonan Li ,  Teresa M. Barnes ,  Robert Torres, Jr. ,  Carrie L. Wyse

    IPC分类号： C23C16/00 ,  C23C16/08

    CPC分类号： C23C16/45523 ,  C23C16/407 ,  C23C16/50

    摘要： Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

    摘要翻译： 描述了通过化学气相沉积在衬底上形成导电氟掺杂金属氧化物层的方法。 所述方法可以包括在处理室中加热衬底，并将含金属的前体和含氟前体引入到处理室中。 所述方法还可以包括向处理室中加入含氧前体。 使前体反应以在衬底上沉积氟掺杂的金属氧化物层。 方法还可以包括通过等离子体辅助化学气相沉积形成导电性氟掺杂金属氧化物层。 这些方法可以包括在处理室中提供衬底，并将含金属的前体和含氟前体引入处理室。 可以形成包括来自含金属的前体和含氟前体的物质的等离子体。 该物质可以反应以在衬底上沉积氟掺杂的金属氧化物层。

    Variable temperature semiconductor film deposition
    8.
    发明授权
    Variable temperature semiconductor film deposition 失效
    可变温度半导体膜沉积

    公开(公告)号：US5712187A

    公开(公告)日：1998-01-27

    申请号：US555621

    申请日：1995-11-09

    申请人： Xiaonan Li ,  Peter Sheldon

    发明人： Xiaonan Li ,  Peter Sheldon

    IPC分类号： H01L21/203 ,  H01L21/363 ,  H01L31/073 ,  H01L31/18 ,  H01L21/20

    CPC分类号： H01L31/073 ,  H01L21/02474 ,  H01L21/02562 ,  H01L21/02595 ,  H01L21/02631 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

    摘要： A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

    摘要翻译： 一种在衬底上沉积半导体材料的方法。 该方法顺序地包括（a）提供诸如蒸气的沉积状态的半导体材料以沉积在基底上; （b）将半导体材料沉积在衬底上，同时将衬底加热到​​足以使半导体材料形成具有第一晶粒尺寸的第一膜层的第一温度; （c）在将衬底冷却至足以使半导体材料形成沉积在第一膜层上并具有小于第一晶粒尺寸的第二晶粒尺寸的第二膜层的第二温度下，将半导体材料连续沉积在衬底上; 和（d）提高衬底温度，同时继续或不继续沉积半导体材料以形成第三膜层，从而将膜层退火成在光伏应用中具有良好效率特性的单层。 优选的半导体材料是沉积在已经具有硫化镉层的玻璃/氧化锡衬底上的碲化镉。