摘要:
The present disclosure relates to a high-speed and/or power-saving bi-directional transceiver. The transceiver generally includes a (burst) laser driver; an output power monitoring and indicating circuit; control logic (e.g., a microcontroller unit); bi-directional optics; a photodiode bias control circuit; a limiting amplifier; and a receiver optical power monitoring circuit. Optionally, the present transceiver includes a small form factor pluggable (SFP+) connector housing. In addition, the power-saving bi-directional transceiver generally includes a transmitter (TX) energy-saving circuit, a TX burst holding circuit, a receiver (RX) energy-saving circuit, a RX continuous holding circuit and the control logic.
摘要:
An optical transceiver having an integrated optical time domain reflectometer monitoring unit and methods for using the same are disclosed. The disclosure relates to an optical transceiver comprising an optical device comprising a wavelength division multiplexing system (WDM), a data signal driver, a data signal limiting amplifier, and an optical time domain reflectometer (OTDR) data processing module. Furthermore, the optical transceiver is particularly advantageous in an optical line terminal (OLT) and/or a passive optical network (PON). The integrated OTDR data processing module can protect the optical transceiver, ensure successful monitoring data, simplify network wiring and decrease system and network costs by decreasing the number of OTDR modules and WDM units.
摘要:
An optical transceiver having an integrated optical time domain reflectometer monitoring unit and methods for using the same are disclosed. The disclosure relates to an optical transceiver comprising an optical device comprising a wavelength division multiplexing system (WDM), a data signal driver, a data signal limiting amplifier, and an optical time domain reflectometer (OTDR) data processing module. Furthermore, the optical transceiver is particularly advantageous in an optical line terminal (OLT) and/or a passive optical network (PON). The integrated OTDR data processing module can protect the optical transceiver, ensure successful monitoring data, simplify network wiring and decrease system and network costs by decreasing the number of OTDR modules and WDM units.
摘要:
Methods and compositions are provided for performing a set of N DNA sequencing reaction cycles whereby sequence information is obtained for approximately 2*N nucleotide bases.
摘要:
The embodiments of the present invention provide a cellular power supply network, an intelligent gateway and a power supply control method thereof. The cellular power supply network further comprises: at least one cellular power supply layer formed by a plurality of transformers connected as a cellular structure. In the embodiments of the present invention, the electricity energy can be transferred from one transformer to another transformer demanding power as needed, so that the power is more reasonably distributed and the energy utilization rate is improved. In the technical solutions of the present invention, when a certain transformer cannot work normally due to a fault, the electricity energy outside the transformer can be introduced into the user of the transformer using the cellular power supply network, so as to keep continuous power usage. Meanwhile, the transformer can be separated from the power supply network for repairing and maintenance.
摘要:
The present invention relates to a method for producing a filled elastomer wherein a rubber composition is produced by mixing I) raw rubber, II) cross linking agent, III) filler, IV) isocyanate terminated polymer composition and optionally V) further additives and cross linking of the rubber composition. The present invention further relates to a filled elastomer obtainable according to said method and the use of filled elastomers according to the invention as shoe sole.
摘要:
A programmable memory cell including a thick oxide spacer transistor, a programmable thin oxide anti-fuse disposed adjacent to the thick oxide spacer transistor, and first and second thick oxide access transistors. The thick oxide spacer transistor and first and second thick oxide access transistors can include an oxide layer that is thicker than an oxide layer of the programmable thin oxide anti-fuse. The programmable thin oxide anti-fuse and the thick oxide spacer transistor can be natively doped. The first and second thick oxide access transistors can be doped so as to have standard threshold voltage characteristics.
摘要:
Three dimensional cross-point array memory devices and selecting cells within a three dimensional cross-point array memory. In a particular embodiment, three different voltages levels are applied to bit lines of the cross point array to allow for selection of a specific cell. Series of select devices may be implemented to provide a high voltage and a low voltage to specific bit lines, while a middle voltage may also be provided. In a particular embodiment, the select devices comprise Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs).
摘要:
An electric power source arrangement is described, comprising a fuel cell means (2) having a nominal voltage and a specified voltage-current characteristic, to be connected to a load (1), and comprising a variable DC-DC voltage converter (3), a by-pass branch (11) by-passing the DC-DC voltage converter, a switch (13) alternatively connecting the fuel cell to the DC-DC voltage converter or to the by-pass branch, and a control unit (12) controlling the switch, which control unit (12) comprises a measuring device coupled to the fuel cell means (2) for detecting the operating point thereof and is configured to connect the by-pass branch (11) if the fuel cell means voltage is within a selected range of section (5) of the voltage-current characteristic of the fuel cell means and to disconnect the by-pass branch in the remaining range of sections (4, 6, 7) of said characteristic.
摘要:
A method and apparatus for writing data to a non-volatile memory cell, such as an STRAM memory cell or an RRAM memory cell. In some embodiments, a plurality of N non-volatile memory cells, where N is a greater than two, are connected to a common floating source line. A write circuit is adapted to program a selected memory cell of the plurality to a selected data state by passing a write current of selected magnitude through the selected memory cell and concurrently passing a portion of the write current in parallel through each of the remaining N−1 memory cells of the plurality via the common floating source line.