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公开(公告)号：US08398747B2
公开(公告)日：2013-03-19
申请号：US12489759
申请日：2009-06-23
IPC分类号： B01D53/02
CPC分类号： B01J20/28052 , B01D15/00 , B01D53/04 , B01D53/0462 , B01D53/047 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/108 , B01D2256/24 , B01D2257/504 , B01D2257/704 , B01D2257/80 , B01D2259/402 , B01D2259/4145 , B01J20/046 , B01J20/08 , B01J20/10 , B01J20/186 , B01J20/20 , B01J20/3416 , B01J20/3458 , B01J20/3483 , B01J2220/42 , B01J2220/56 , C07C7/12 , C07C7/13 , Y02C10/08 , Y02P20/152 , C07C11/24
摘要： This invention relates in part to a process for producing high purity acetylene by withdrawing a crude acetylene stream from a storage source, and passing said stream through an adsorbent bed that contains layered adsorption media to selectively remove moisture, solvent and carbon dioxide from the stream, thereby producing the high purity acetylene. The adsorption media is regenerated in-situ. The high purity acetylene product is useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.
摘要翻译： 本发明部分地涉及通过从储存源中取出粗乙炔流并使所述物流通过含有层状吸附介质的吸附剂床来选择性地从流中去除水分，溶剂和二氧化碳来生产高纯度乙炔的方法， 从而产生高纯度乙炔。 吸附介质原位再生。 高纯度乙炔产物可用作在半导体应用中沉积碳和含碳膜的原料。
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公开(公告)号：US08322383B2
公开(公告)日：2012-12-04
申请号：US12472420
申请日：2009-05-27
CPC分类号： F17C11/002 , Y02E60/321
摘要： This invention relates in part to a method for preparing a pressure vessel for receiving high purity acetylene at elevated pressure. The method involves providing a porous filler-containing pressure vessel, deep cleaning the porous filler-containing pressure vessel, purifying a solvent, and charging the purified solvent into the deep cleaned, porous filler-containing pressure vessel. The pressure vessel is then charged with high purity acetylene for storage, transport and/or delivery of the high purity acetylene. The high purity acetylene may be useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.
摘要翻译： 本发明部分地涉及用于在高压下接收高纯度乙炔的压力容器的方法。 该方法包括提供含多孔填料的压力容器，深度清洗含多孔填料的压力容器，净化溶剂，并将纯化的溶剂装入深层清洁的含多孔填料的压力容器中。 然后向压力容器中加入高纯度乙炔，用于储存，运输和/或输送高纯度乙炔。 高纯度乙炔可用作在半导体应用中沉积碳和含碳膜的源材料。
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公开(公告)号：US20100300578A1
公开(公告)日：2010-12-02
申请号：US12472420
申请日：2009-05-27
CPC分类号： F17C11/002 , Y02E60/321
摘要： This invention relates in part to a method for preparing a pressure vessel for receiving high purity acetylene at elevated pressure. The method involves providing a porous filler-containing pressure vessel, deep cleaning the porous filler-containing pressure vessel, purifying a solvent, and charging the purified solvent into the deep cleaned, porous filler-containing pressure vessel. The pressure vessel is then charged with high purity acetylene for storage, transport and/or delivery of the high purity acetylene. The high purity acetylene may be useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.
摘要翻译： 本发明部分地涉及用于在高压下接收高纯度乙炔的压力容器的方法。 该方法包括提供含多孔填料的压力容器，深度清洗含多孔填料的压力容器，净化溶剂，并将纯化的溶剂装入深层清洁的含多孔填料的压力容器中。 然后向压力容器中加入高纯度乙炔，用于储存，运输和/或输送高纯度乙炔。 高纯度乙炔可用作在半导体应用中沉积碳和含碳膜的源材料。
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公开(公告)号：US09316355B2
公开(公告)日：2016-04-19
申请号：US13665141
申请日：2012-10-31
CPC分类号： F17C11/002 , Y02E60/321
摘要： This invention relates in part to a method for preparing a pressure vessel for receiving high purity acetylene at elevated pressure. The method involves providing a porous filler-containing pressure vessel, deep cleaning the porous filler-containing pressure vessel, purifying a solvent, and charging the purified solvent into the deep cleaned, porous filler-containing pressure vessel. The pressure vessel is then charged with high purity acetylene for storage, transport and/or delivery of the high purity acetylene. The high purity acetylene may be useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.
摘要翻译： 本发明部分地涉及用于在高压下接收高纯度乙炔的压力容器的方法。 该方法包括提供含多孔填料的压力容器，深度清洗含多孔填料的压力容器，净化溶剂，并将纯化的溶剂装入深层清洁的含多孔填料的压力容器中。 然后向压力容器中加入高纯度乙炔，用于储存，运输和/或输送高纯度乙炔。 高纯度乙炔可用作在半导体应用中沉积碳和含碳膜的源材料。
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公开(公告)号：US20130048143A1
公开(公告)日：2013-02-28
申请号：US13665141
申请日：2012-10-31
CPC分类号： F17C11/002 , Y02E60/321
摘要： This invention relates in part to a method for preparing a pressure vessel for receiving high purity acetylene at elevated pressure. The method involves providing a porous filler-containing pressure vessel, deep cleaning the porous filler-containing pressure vessel, purifying a solvent, and charging the purified solvent into the deep cleaned, porous filler-containing pressure vessel. The pressure vessel is then charged with high purity acetylene for storage, transport and/or delivery of the high purity acetylene. The high purity acetylene may be useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.
摘要翻译： 本发明部分地涉及用于在高压下接收高纯度乙炔的压力容器的方法。 该方法包括提供含多孔填料的压力容器，深度清洗含多孔填料的压力容器，净化溶剂，并将纯化的溶剂装入深层清洁的含多孔填料的压力容器中。 然后向压力容器中加入高纯度乙炔，用于储存，运输和/或输送高纯度乙炔。 高纯度乙炔可用作在半导体应用中沉积碳和含碳膜的源材料。
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公开(公告)号：US20100319536A1
公开(公告)日：2010-12-23
申请号：US12489759
申请日：2009-06-23
CPC分类号： B01J20/28052 , B01D15/00 , B01D53/04 , B01D53/0462 , B01D53/047 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/108 , B01D2256/24 , B01D2257/504 , B01D2257/704 , B01D2257/80 , B01D2259/402 , B01D2259/4145 , B01J20/046 , B01J20/08 , B01J20/10 , B01J20/186 , B01J20/20 , B01J20/3416 , B01J20/3458 , B01J20/3483 , B01J2220/42 , B01J2220/56 , C07C7/12 , C07C7/13 , Y02C10/08 , Y02P20/152 , C07C11/24
摘要： This invention relates in part to a process for producing high purity acetylene by withdrawing a crude acetylene stream from a storage source, and passing said stream through an adsorbent bed that contains layered adsorption media to selectively remove moisture, solvent and carbon dioxide from the stream, thereby producing the high purity acetylene. The adsorption media is regenerated in-situ. The high purity acetylene product is useful as a source material for depositing carbon and carbon-containing films in semiconductor applications.
摘要翻译： 本发明部分地涉及通过从储存源中取出粗乙炔流并使所述物流通过含有层状吸附介质的吸附剂床来选择性地从流中去除水分，溶剂和二氧化碳来生产高纯度乙炔的方法， 从而产生高纯度乙炔。 吸附介质原位再生。 高纯度乙炔产物可用作在半导体应用中沉积碳和含碳膜的原料。
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公开(公告)号：US20120227816A1
公开(公告)日：2012-09-13
申请号：US13045174
申请日：2011-03-10
申请人： Xuemei Song , Lloyd Anthony Brown , Thomas Schulte
发明人： Xuemei Song , Lloyd Anthony Brown , Thomas Schulte
IPC分类号： F15D1/00
CPC分类号： G05D11/138 , B01F3/028 , Y10T137/0318
摘要： This invention is directed to various protocols for reprocessing off-spec gas to produce a concentration of off-spec gases to a desired target concentration. A combination of source gases is blended with the off-spec gas. This technique has the effect of enabling relatively small adjustments to the concentration of off-spec gas. Processes are also described that incorporate the blending protocols.
摘要翻译： 本发明涉及用于重新处理不典型气体以产生浓度异常气体达到所需目标浓度的各种方案。 源气体的组合与异常气体混合。 这种技术具有能够对非典型气体的浓度进行相当小的调整的效果。 还描述了并入混合方案的方法。
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8.发明申请SILICON-CONTAINING DOPANT COMPOSITIONS, SYSTEMS AND METHODS OF USE THEREOF FOR IMPROVING ION BEAM CURRENT AND PERFORMANCE DURING SILICON ION IMPLANTATION 有权含硅含量的组合物，系统及其使用方法，用于改善离子束电流和硅离子植入过程中的性能公开(公告)号：US20140061501A1
公开(公告)日：2014-03-06
申请号：US14011887
申请日：2013-08-28
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/006
摘要： A novel composition, system and method thereof for improving beam current during silicon ion implantation are provided. The silicon ion implant process involves utilizing a first silicon-based co-species and a second species. The second species is selected to have an ionization cross-section higher than that of the first silicon-based species at an operating arc voltage of an ion source utilized during generation and implantation of active silicon ions species. The active silicon ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated solely from SiF4.
摘要翻译： 提供了一种用于在硅离子注入期间改善束电流的新型组成，系统及其方法。 硅离子注入工艺涉及利用第一硅基共同物种和第二物质。 在生成和注入活性硅离子物质期间使用的离子源的操作电弧电压下，选择第二种类具有高于第一硅类物质的离子化横截面。 活性硅离子产生改进的束电流，其特征在于与仅从SiF 4产生的束电流相比，保持或增加束电流水平，而不会引起离子源的劣化。
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公开(公告)号：US07740690B2
公开(公告)日：2010-06-22
申请号：US11729457
申请日：2007-03-29
IPC分类号： B01D53/04
CPC分类号： B01D53/0462 , B01D53/0438 , B01D2257/302 , B01D2257/504 , B01D2257/80 , B01D2258/0216 , B01D2259/40098 , B01D2259/401 , B01J8/0242 , B01J8/0285 , B01J2208/00061 , B01J2208/0015 , B01J2208/00212 , B01J2208/00407 , Y02C10/08
摘要： The present invention relates to methods and systems for purifying gases, such as for example semiconductor process gases. The invention more particularly relates to fluid purification methods and systems having improved heat transfer capabilities and controls such that the purified fluid produced from the process contains reduced impurity levels and/or exhibits more uniform concentrations within the final product. In another aspect of the invention, the activation time for adsorbent beds used in such processes and systems can be reduced.
摘要翻译： 本发明涉及用于净化气体的方法和系统，例如半导体工艺气体。 本发明更具体地涉及具有改进的热传递能力和控制的流体净化方法和系统，使得由该方法产生的纯化流体含有降低的杂质水平和/或在最终产物内表现出更均匀的浓度。 在本发明的另一方面，可以减少在这些方法和系统中使用的吸附床的活化时间。
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10.发明授权公开(公告)号：US09114989B2
公开(公告)日：2015-08-25
申请号：US13693673
申请日：2012-12-04
申请人： Lingyan Song , Lloyd Anthony Brown
发明人： Lingyan Song , Lloyd Anthony Brown
CPC分类号： C01B23/0094 , C01B23/0021 , C01B2210/0004 , C01B2210/0034 , C01B2210/0045 , C01B2210/005 , C01B2210/0053 , C01B2210/007 , C01B2210/0098 , C30B15/00 , C30B15/20 , C30B29/06 , F25J3/08 , F25J2200/02 , F25J2205/40 , F25J2205/50 , F25J2205/82 , F25J2215/30 , F25J2215/58 , F25J2245/02 , F25J2245/58 , Y02C10/12
摘要： This invention is directed to a method for recovering, purifying and recycling an inert gas on a continual basis in connection with a silicon crystal pulling process. Silicon oxide impurities generated during the crystal growth process are completely oxidized by in-situ oxidation with a regulated amount of an oxidizing source gas mixture to form silicon dioxide impurities, which can be removed by a particulate removal device. The particulate-free effluent enters a purification unit to remove the remaining impurities. The inert gas emerging from the purification unit can be fed back into the crystal puller apparatus and/or mixed with the oxidizing source gas mixture. As a result, the ability to increase silicon crystal throughput, quality and at the same time reduce the costs associated with recycling the inert gas can be achieved.
摘要翻译： 本发明涉及一种连续地回收，净化和再循环惰性气体的方法，其结合硅晶体拉制工艺。 在晶体生长过程中产生的氧化硅杂质通过用调节量的氧化源气体混合物进行原位氧化而完全氧化，形成二氧化硅杂质，其可通过微粒去除装置除去。 无颗粒流出物进入净化单元以除去剩余的杂质。 从净化单元排出的惰性气体可以反馈到晶体拉出装置中和/或与氧化源气体混合物混合。 结果，可以实现提高硅晶体产量，质量并同时降低与惰性气体再循环相关的成本的能力。
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