INERT GAS RECOVERY AND RECYCLE FOR SILICON CRYSTAL GROWTH PULLING PROCESS
    7.
    发明申请
    INERT GAS RECOVERY AND RECYCLE FOR SILICON CRYSTAL GROWTH PULLING PROCESS 有权
    用于硅晶体生长拉拔过程的气体回收和回收

    公开(公告)号:US20130149226A1

    公开(公告)日:2013-06-13

    申请号:US13693673

    申请日:2012-12-04

    IPC分类号: C01B23/00

    摘要: This invention is directed to a method for recovering, purifying and recycling an inert gas on a continual basis in connection with a silicon crystal pulling process. Silicon oxide impurities generated during the crystal growth process are completely oxidized by in-situ oxidation with a regulated amount of an oxidizing source gas mixture to form silicon dioxide impurities, which can be removed by a particulate removal device. The particulate-free effluent enters a purification unit to remove the remaining impurities. The inert gas emerging from the purification unit can be fed back into the crystal puller apparatus and/or mixed with the oxidizing source gas mixture. As a result, the ability to increase silicon crystal throughput, quality and at the same time reduce the costs associated with recycling the inert gas can be achieved.

    摘要翻译: 本发明涉及一种连续地回收,净化和再循环惰性气体的方法,其结合硅晶体拉制工艺。 在晶体生长过程中产生的氧化硅杂质通过用调节量的氧化源气体混合物进行原位氧化而完全氧化,形成二氧化硅杂质,其可通过微粒去除装置除去。 无颗粒流出物进入净化单元以除去剩余的杂质。 从净化单元排出的惰性气体可以反馈到晶体拉出装置中和/或与氧化源气体混合物混合。 结果,可以实现提高硅晶体产量,质量并同时降低与惰性气体再循环相关的成本的能力。