Semiconductor light-emitting device and fabrication method thereof
    2.
    发明授权
    Semiconductor light-emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08278672B2

    公开(公告)日:2012-10-02

    申请号:US11727378

    申请日:2007-03-26

    IPC分类号: H01L33/22

    CPC分类号: H01L33/16 H01L33/22

    摘要: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0 11] or [01 1] from [100], or toward [011] or [0 11] from [ 100] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.

    摘要翻译: 公开了一种半导体发光器件。 半导体发光器件包括设置在半导体衬底上的多层外延结构。 半导体衬底具有与其上表面垂直的预定晶格方向,其中预定晶格方向从[100]或[100]或[011]或[011]到[011]或[011] ],使得半导体衬底的上表面包括具有不同晶格面方向的至少两个晶格面。 多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。 本发明还公开了一种制造半导体发光器件的方法。

    LIGHT-EMITTING DEVICE
    3.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号:US20100084679A1

    公开(公告)日:2010-04-08

    申请号:US12613749

    申请日:2009-11-06

    IPC分类号: H01L33/00 H01L21/30

    摘要: A light-emitting device having a substrate, a light-emitting stack, and a transparent connective layer is provided. The light-emitting stack is disposed above the substrate and comprises a first diffusing surface. The transparent connective layer is disposed between the substrate and the first diffusing surface of the light-emitting stack; an index of refraction of the light-emitting stack is different from that of the transparent connective layer.

    摘要翻译: 提供了具有基板,发光层和透明结合层的发光装置。 发光叠层设置在基板上方并包括第一扩散表面。 透明连接层设置在基板和发光叠层的第一扩散面之间; 发光层的折射率与透明结合层的折射率不同。

    Light emitting device
    4.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US07489068B2

    公开(公告)日:2009-02-10

    申请号:US11326750

    申请日:2006-01-06

    IPC分类号: H01J5/16

    CPC分类号: H01L33/22

    摘要: A light emitting device having a transparent substrate, a light emitting stack, and a transparent adhesive layer is provided. The light emitting stack is disposed above the transparent substrate and comprises a diffusing surface. The transparent adhesive layer is disposed between the transparent substrate and the diffusing surface of the light emitting stack; an index of refraction of the light emitting stack is different from that of the transparent adhesive layer.

    摘要翻译: 提供了具有透明基板,发光叠层和透明粘合剂层的发光器件。 发光堆叠设置在透明基板的上方并且包括漫射面。 透明粘合剂层设置在透明基板和发光叠层的漫射面之间; 发光层的折射率与透明粘合剂层的折射率不同。

    Light-emitting device
    5.
    发明申请
    Light-emitting device 审中-公开
    发光装置

    公开(公告)号:US20080128734A1

    公开(公告)日:2008-06-05

    申请号:US11984248

    申请日:2007-11-15

    IPC分类号: H01L33/00

    CPC分类号: H01L33/22 H01L33/0079

    摘要: A light emitting device having a transparent substrate, a light emitting stack, and a transparent adhesive layer is provided. The light emitting stack is disposed above the transparent substrate and comprises a diffusing surface. The transparent adhesive layer is disposed between the transparent substrate and the diffusing surface of the light emitting stack; an index of refraction of the light emitting stack is different from that of the transparent adhesive layer.

    摘要翻译: 提供了具有透明基板,发光叠层和透明粘合剂层的发光器件。 发光堆叠设置在透明基板的上方并且包括漫射面。 透明粘合剂层设置在透明基板和发光叠层的漫射面之间; 发光层的折射率与透明粘合剂层的折射率不同。

    Semiconductor light-emitting device and fabrication method thereof
    6.
    发明申请
    Semiconductor light-emitting device and fabrication method thereof 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20070221929A1

    公开(公告)日:2007-09-27

    申请号:US11727378

    申请日:2007-03-26

    IPC分类号: H01L33/00

    CPC分类号: H01L33/16 H01L33/22

    摘要: A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device comprises a multilayer epitaxial structure disposed on a semiconductor substrate. The semiconductor substrate has a predetermined lattice direction perpendicular to an upper surface thereof, wherein the predetermined lattice direction is angled toward [0ī1] or [01ī] from [100], or toward [011] or [0 ii] from [ī00] so that the upper surface of the semiconductor substrate comprises at least two lattice planes with different lattice plane directions. The multilayer epitaxial structure has a roughened upper surface perpendicular to the predetermined lattice direction. The invention also discloses a method for fabricating a semiconductor light-emitting device.

    摘要翻译: 公开了一种半导体发光器件。 半导体发光器件包括设置在半导体衬底上的多层外延结构。 半导体衬底具有垂直于其上表面的预定晶格方向,其中预定的晶格方向朝向[100]或[011]或[0 ii],使得半导体衬底的上表面包括具有不同晶格面方向的至少两个晶格面。 多层外延结构具有垂直于预定晶格方向的粗糙化的上表面。 本发明还公开了一种制造半导体发光器件的方法。

    Method of seperating two material systems
    7.
    发明申请
    Method of seperating two material systems 有权
    分离两种材料系统的方法

    公开(公告)号:US20090111205A1

    公开(公告)日:2009-04-30

    申请号:US12285905

    申请日:2008-10-16

    IPC分类号: H01L21/306 H01L21/465

    CPC分类号: H01L33/0079

    摘要: An embodiment of this invention discloses a method of separating two material systems, which comprises steps of providing a bulk sapphire; forming a nitride system on the bulk sapphire; forming at least two channels between the bulk sapphire and the nitride system; etching at least one inner surface of the channel; and separating the bulk sapphire and the nitride system.

    摘要翻译: 本发明的一个实施例公开了一种分离两种材料体系的方法,其包括提供散装蓝宝石的步骤; 在本体蓝宝石上形成氮化物系统; 在本体蓝宝石和氮化物体系之间形成至少两个通道; 蚀刻通道的至少一个内表面; 并分离大块蓝宝石和氮化物体系。