摘要:
A method for manufacturing an optoelectronic device includes steps of: providing an optoelectronic structure; forming a first metal contact layer having a pattern on the upper surface of the optoelectronic structure; forming a dielectric layer on the first metal contact layer and the optoelectronic structure; removing the dielectric layer on the first metal contact layer; and forming an electrode structure on the first metal contact layer.
摘要:
A method for manufacturing an optoelectronic device includes steps of: providing an optoelectronic structure; forming a first contact layer having a pattern on the upper surface of the optoelectronic structure; forming a dielectric layer on the first contact layer and the optoelectronic structure; removing the dielectric layer on the first contact layer; and forming an electrode structure on the first contact layer.
摘要:
A wafer temperature control apparatus comprises a first temperature sensor and a second temperature sensor. The first temperature sensor is configured to receive a first temperature signal from a center portion of a backside of a susceptor. The second temperature sensor is configured to receive a second temperature signal from an edge portion of the susceptor. A plurality of controllers are configured to adjust each heating source's output based upon the first temperature signal and the second temperature signal.
摘要:
A device for fixing soft tissue. A sleeve is detachably connected to a self-drilling tapping screw, moving and rotating the self-drilling tapping screw. A guide bar is detachably connected to the self-drilling tapping screw and fit in the sleeve. A fixing pin is fit in a washer and connected to the self-drilling tapping screw. The guide bar is detachably fit in the fixing pin. The fixing pin abuts the washer and the self-drilling tapping screw.
摘要:
A touch-sensitive device includes a membrane substrate, an inductive layer and a protection layer. The inductive layer, arranged on a front face of the membrane substrate, has a plurality of capacitance-inductive sections, and at least one transmission line extended from a side of each of the capacitance-inductive sections. The protection layer is arranged on a front face of the inductive layer. A capacitance variation generated from the inductive section is in turn to output a signal to an electronic object via the transmission lines. After the signal is processed by the electronic object, a specific function is then executed.
摘要:
A spinal dynamic stabilization device for maintaining an anatomical height between two adjacent vertebras is provided. Each vertebra includes a spinous process and two symmetric pedicles. The spinal dynamic stabilization device includes a supporting member, at least one anchoring member, and at least one connecting member. The supporting member is disposed between the spinous processes. The anchoring member is fixed in one of the vertebra via one of the pedicles. The connecting member connects the supporting member to the anchoring member, fixing a relative position between the supporting member and the anchoring member, further fixing a relative position between the vertebras.
摘要:
A FinFET device may include a dummy FinFET structure laterally adjacent an active FinFET structure to reduce stress imbalance and the effects of stress imbalance on the active FinFET structure. The FinFET device comprises an active FinFET comprising a plurality of semiconductor fins, and a dummy FinFET comprising a plurality of semiconductor fins. The active FinFET and the dummy FinFET are laterally spaced from each other by a spacing that is related to the fin pitch of the active FinFET.
摘要:
An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.
摘要:
An interspinous stabilization device includes: (1) a supporting member with a top surface and a bottom surface both being configured to engage spinous processes; (2) two side members connected to the supporting member; (3) a fastener attached to the side members; and optionally (4) two extendable arms each secured on one of the side members.