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27 条记录 (耗时 0.029 秒)

    Capacitance process using passivation film scheme
    7.
    发明申请
    Capacitance process using passivation film scheme 有权
    电容工艺采用钝化膜方案

    公开(公告)号：US20070077700A1

    公开(公告)日：2007-04-05

    申请号：US11634580

    申请日：2006-12-06

    申请人： Chuan Lin ,  James Chiu

    发明人： Chuan Lin ,  James Chiu

    IPC分类号： H01L21/8242 ,  H01L21/20 ,  H01L21/311

    CPC分类号： H01L28/40 ,  H01L23/5223 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In accordance with the objectives of the invention a new method and structure is provided for the creation of a capacitor. A contact pad and a lower capacitor plate have been provided over a substrate. Under the first embodiment of the invention, a layer of etch stop material, serving as the capacitor dielectric is deposited after which a triple layer of passivation is created over a substrate. The compound passivation layer is first etched, using a fuse mask, to define and expose the capacitor dielectric and a fuse area after which the passivation layer is second etched to define and expose the contact pad. A layer of AlCu is then deposited, patterned and etched to create a capacitor upper plate and a contact interconnect over the contact pad. Under a second embodiment of the invention, a triple layer of passivation is created over a layer of etch stop material deposited over a substrate, a contact pad and a lower capacitor plate have been provided over the substrate. The compound passivation layer is first etched to expose the lower capacitor plate. A layer of capacitor dielectric is deposited after which the passivation layer is second etched to expose the contact pad. A layer of AlCu is then deposited, patterned and etched to create an AlCu interconnect over the contact pad and a upper capacitor plate.

    摘要翻译： 根据本发明的目的，提供了一种用于产生电容器的新方法和结构。 接触焊盘和下电容器板已经设置在基板上。 在本发明的第一实施例中，沉积用作电容器电介质的一层蚀刻停止材料，之后在衬底上形成三层钝化。 首先使用熔丝掩模蚀刻化合物钝化层以限定和暴露电容器电介质和熔融区域，之后第二蚀刻钝化层以限定和暴露接触焊盘。 然后沉积，图案化和蚀刻AlCu层，以在接触焊盘上形成电容器上板和接触互连。 在本发明的第二实施例中，在沉积在衬底上的蚀刻停止材料层上形成三层钝化，在衬底上提供接触焊盘和下电容器板。 首先蚀刻复合钝化层以暴露下电容器板。 沉积一层电容电介质，之后第二次蚀刻钝化层以露出接触垫。 然后沉积，图案化和蚀刻AlCu层，以在接触焊盘和上电容器板上产生AlCu互连。

    Junction leakage suppression in memory devices
    8.
    发明申请
    Junction leakage suppression in memory devices 有权
    存储器件中的结漏电抑制

    公开(公告)号：US20070052002A1

    公开(公告)日：2007-03-08

    申请号：US11152375

    申请日：2005-06-15

    申请人： Shibly Ahmed ,  Jun Kang ,  Hsiao-Han Thio ,  Imran Khan ,  Dong-Hyuk Ju ,  Chuan Lin

    发明人： Shibly Ahmed ,  Jun Kang ,  Hsiao-Han Thio ,  Imran Khan ,  Dong-Hyuk Ju ,  Chuan Lin

    IPC分类号： H01L29/788

    CPC分类号： H01L29/66833 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/7885 ,  H01L29/792

    摘要： A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.

    摘要翻译： 存储器件包括衬底和形成在衬底中的源区和漏区。 源极和漏极区域包括磷和砷，并且磷可以在砷之前被植入。 存储器件还包括形成在衬底上的第一电介质层和形成在第一介电层上的电荷存储元件。 存储器件还可以包括形成在电荷存储元件上的第二电介质层和形成在第二介电层上的控制栅极。

    Heat sink for memory
    9.
    发明申请
    Heat sink for memory 审中-公开
    用于记忆的散热器

    公开(公告)号：US20060268523A1

    公开(公告)日：2006-11-30

    申请号：US11184877

    申请日：2005-07-20

    申请人： Chuan Lin

    发明人： Chuan Lin

    IPC分类号： H05K7/20

    CPC分类号： H01L23/4006 ,  G06F1/20 ,  H01L23/367 ,  H01L2023/405 ,  H01L2023/4056 ,  H01L2023/4062 ,  H01L2924/0002 ,  H01L2924/00

    摘要： This invention relates to an improved heat sink for memory, it comprising of two clamp pieces and a fixing plug, especially, the two clamp pieces are symmetrical to each other, there are all kinds of dented and bumped interleaved special marks installed on their outer surfaces along flow field direction, moreover, corresponding dented and protruding pivoting parts are installed at two sides of one side of their corresponding inner surfaces, through the two dented and protruding pivoting parts and the fixing plug to penetrate and lock them, an inverted U shape heat sink structure is thus formed; therefore, when is in use, in addition to possessing easy and convenient assembly, there is no need to have the assistance from other support tool for the assembly of the heat sink and memory in the production line, it is only needed to embed the memory and touch it all the way to the lower ends of the dented and protruding pivoting parts to achieve accurate positioning function, meanwhile, the two clamp pieces will not get distorted, they can limit the memory to perform movement only in single direction, therefore, heat sink and memory can accurately touch and position each other to achieve good heat dissipating effect and to have the heat dissipating efficiency enhanced.

    摘要翻译： 本发明涉及一种用于存储器的改进的散热器，其包括两个夹片和固定插头，特别地，两个夹具彼此对称，在其外表面上安装有各种凹陷和凸起的交错的特殊标记 沿着流场方向，相应的凹入和突出的枢转部分安装在其相应内表面一侧的两侧，通过两个凹进和突出的枢转部分和固定塞将其穿透和锁定，倒U形热 这样形成了水槽结构; 因此，当使用时，除了具有简单和方便的组装之外，不需要其他支持工具的帮助来组装散热器和存储器在生产线中，仅需要嵌入存储器 并将其一直碰到凹凸突出部分的下端，以实现精确的定位功能，同时两个夹具不会变形，可以限制记忆体在单一方向上进行运动，因此热量 水槽和存储器可以准确地相互接触并相互定位以获得良好的散热效果并且提高散热效率。