摘要:
A method for converting carbon into a carbon oxide, comprises: contacting carbon with steam in presence of a carnegieite-like material of formula (Na2O)xNa[Al2Si2O8], wherein 0
摘要翻译:一种将碳转化为碳氧化物的方法,包括:在碳酸钙样物质(Na 2 O)x Na [Al 2 Si 2 O 8]存在下使碳与蒸汽接触,其中0
摘要:
A method for converting carbon into a carbon oxide, comprises: contacting carbon with steam in presence of a carnegieite-like material of formula (Na2O)xNa2[Al2Si2O8], wherein 0
摘要翻译:一种将碳转化为碳氧化物的方法,包括:在碳酸钾类物质(Na 2 O)x Na 2 [Al 2 Si 2 O 8]存在下使碳与蒸汽接触,其中0
摘要:
Wastewater, for example flue gas desulphurization blowdown water, containing soluble selenium is treated in a bioreactor. Microorganisms in the reactor reduce the selenium to elemental selenium, which is insoluble. The elemental selenium is discharged from the reactor in waste sludge also comprising biomass and other suspended solids. Non-microbial suspended solids are removed by way of acid dissolution followed by de-watering. The remaining sludge is burned at a temperature below the selenium oxidation temperature to remove biomass while leaving selenium particles behind.
摘要:
An exemplary gasification reactor is disclosed including a vessel defined with a reaction chamber for receiving a carbon-containing fuel and an oxygen-containing gas under a partial combustion and producing a synthesis gas. A first cooling device and a second cooling device are provided to cool the vessel. The first cooling device is attached to a first upper region of the vessel. The second cooling device is attached to the second middle region of the vessel. A method and IGCC power generation system is also disclosed.
摘要:
A refractory wall comprises a hotface layer comprising a hotface surface configured to be adjacent to a carbonaceous gasification environment, a backing layer facing the hotface layer, and a cooling layer facing the backing layer and configured to cool the hotface layer via the backing layer. A gasification device and a gasification process are also presented.
摘要:
A refractory wall comprises a hotface layer comprising a hotface surface configured to be adjacent to a carbonaceous gasification environment, a backing layer facing the hotface layer, and a cooling layer facing the backing layer and configured to cool the hotface layer via the backing layer. A gasification device and a gasification process are also presented.