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    TFT substrate and display device having the same
    1.
    发明授权
    TFT substrate and display device having the same 失效
    TFT基板和具有该TFT基板的显示装置

    公开(公告)号：US07741641B2

    公开(公告)日：2010-06-22

    申请号：US11371057

    申请日：2006-03-08

    申请人： Yang-Ho Bae ,  Chang-Oh Jeong ,  Min-Seok Oh ,  Je-Hun Lee ,  Beom-Seok Cho

    发明人： Yang-Ho Bae ,  Chang-Oh Jeong ,  Min-Seok Oh ,  Je-Hun Lee ,  Beom-Seok Cho

    IPC分类号： H01L29/43 ,  H01L29/786

    CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L29/458

    摘要： A TFT substrate includes a base substrate, a gate wiring formed on the base substrate, a gate insulation layer, an activation layer, an oxidation-blocking layer, a data wiring, a protection layer and a pixel electrode. The gate wiring includes a gate line and a gate electrode. The gate insulation layer is formed on the base substrate to cover the gate wiring. The activation layer is formed on the gate insulation layer. The oxidation-blocking layer is formed on the activation layer. The data wiring includes a data line, a source electrode and a drain electrode. The source and drain electrodes are disposed on the oxidation-blocking layer therefore lowering the on-current (“Ion”) for turning on the TFT and increasing the off-current (“Ioff”) for turning off the TFT due to the oxidation-blocking layer.

    摘要翻译： TFT基板包括基底基板，形成在基底基板上的栅极布线，栅极绝缘层，激活层，氧化阻挡层，数据布线，保护层和像素电极。 栅极布线包括栅极线和栅电极。 栅极绝缘层形成在基底基板上以覆盖栅极布线。 活化层形成在栅绝缘层上。 氧化阻挡层形成在活化层上。 数据线包括数据线，源电极和漏电极。 源电极和漏电极设置在氧化阻挡层上，因此降低用于导通TFT的导通电流（“Ion”），并且由于氧化阻挡层而增加关闭TFT的截止电流（“Ioff”）， 阻挡层。

    TFT substrate and display device having the same
    2.
    发明申请
    TFT substrate and display device having the same 失效
    TFT基板和具有该TFT基板的显示装置

    公开(公告)号：US20060205125A1

    公开(公告)日：2006-09-14

    申请号：US11371057

    申请日：2006-03-08

    申请人： Yang-Ho Bae ,  Chang-Oh Jeong ,  Min-Seok Oh ,  Je-Hun Lee ,  Beom-Seok Cho

    发明人： Yang-Ho Bae ,  Chang-Oh Jeong ,  Min-Seok Oh ,  Je-Hun Lee ,  Beom-Seok Cho

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L29/458

    摘要： A TFT substrate includes a base substrate, a gate wiring formed on the base substrate, a gate insulation layer, an activation layer, an oxidation-blocking layer, a data wiring, a protection layer and a pixel electrode. The gate wiring includes a gate line and a gate electrode. The gate insulation layer is formed on the base substrate to cover the gate wiring. The activation layer is formed on the gate insulation layer. The oxidation-blocking layer is formed on the activation layer. The data wiring includes a data line, a source electrode and a drain electrode. The source and drain electrodes are disposed on the oxidation-blocking layer therefore lowering the on-current (“Ion”) for turning on the TFT and increasing the off-current (“Ioff”) for turning off the TFT due to the oxidation-blocking layer.

    摘要翻译： TFT基板包括基底基板，形成在基底基板上的栅极布线，栅极绝缘层，激活层，氧化阻挡层，数据布线，保护层和像素电极。 栅极布线包括栅极线和栅电极。 栅极绝缘层形成在基底基板上以覆盖栅极布线。 活化层形成在栅绝缘层上。 氧化阻挡层形成在活化层上。 数据线包括数据线，源电极和漏电极。 源电极和漏电极设置在氧化阻挡层上，因此降低导通电流（“I”上“），以便导通TFT并增加截止电流（”I“ “），用于关闭由于氧化阻挡层而导致的TFT。

    Thin film transistor array panel and manufacturing method thereof
    3.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US07172913B2

    公开(公告)日：2007-02-06

    申请号：US11082967

    申请日：2005-03-18

    申请人： Woo-Geun Lee ,  Beom-Seok Cho ,  Je-Hun Lee ,  Chang-Oh Jeong ,  Sang-Gab Kim ,  Min-Seok Oh ,  Young-Wook Lee ,  Hee-Hwan Choe

    发明人： Woo-Geun Lee ,  Beom-Seok Cho ,  Je-Hun Lee ,  Chang-Oh Jeong ,  Sang-Gab Kim ,  Min-Seok Oh ,  Young-Wook Lee ,  Hee-Hwan Choe

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1288 ,  G02F2001/136236 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733

    摘要： A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.

    摘要翻译： 一种制造薄膜晶体管阵列面板的方法，包括在衬底上形成栅极线，在栅极线上形成栅极绝缘层，在栅极绝缘层上形成半导体层，在半导体上形成数据线和漏电极 在所述数据线和所述漏电极上沉积钝化层，在所述钝化层上形成包含比所述第一部分薄的第一部分和第二部分的光致抗蚀剂，使用所述光致抗蚀剂作为掩模蚀刻所述钝化层 露出漏极的一部分，去除光致抗蚀剂的第二部分，沉积导电膜，以及去除光致抗蚀剂的第一部分，以在漏电极的暴露部分上形成像素电极。

    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管阵列及其制造方法

    公开(公告)号：US20070102770A1

    公开(公告)日：2007-05-10

    申请号：US11619451

    申请日：2007-01-03

    申请人： Woo-Geun Lee ,  Beom-Seok Cho ,  Je-Hun Lee ,  Chang-Oh Jeong ,  Sang-Gab Kim ,  Min-Seok Oh ,  Young-Wook Lee ,  Hee-Hwan Choe

    发明人： Woo-Geun Lee ,  Beom-Seok Cho ,  Je-Hun Lee ,  Chang-Oh Jeong ,  Sang-Gab Kim ,  Min-Seok Oh ,  Young-Wook Lee ,  Hee-Hwan Choe

    IPC分类号： H01L29/76

    CPC分类号： H01L27/1288 ,  G02F2001/136236 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/41733

    摘要： A method of manufacturing a thin film transistor array panel including forming a gate line on a substrate, forming a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer, forming a data line and a drain electrode on the semiconductor layer, depositing a passivation layer on the data line and the drain electrode, forming a photoresist including a first portion and a second portion, which is thinner than the first portion, on the passivation layer, etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode, removing the second portion of the photoresist, depositing a conductive film, and removing the first portion of the photoresist to form a pixel electrode on the exposed portion of the drain electrode.

    摘要翻译： 一种制造薄膜晶体管阵列面板的方法，包括在衬底上形成栅极线，在栅极线上形成栅极绝缘层，在栅极绝缘层上形成半导体层，在半导体上形成数据线和漏电极 在所述数据线和所述漏电极上沉积钝化层，在所述钝化层上形成包含比所述第一部分薄的第一部分和第二部分的光致抗蚀剂，使用所述光致抗蚀剂作为掩模蚀刻所述钝化层 露出漏极的一部分，去除光致抗蚀剂的第二部分，沉积导电膜，以及去除光致抗蚀剂的第一部分，以在漏电极的暴露部分上形成像素电极。

    Thin film transistor array panel and method of manufacturing the same
    8.
    发明申请
    Thin film transistor array panel and method of manufacturing the same 审中-公开
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号：US20070111412A1

    公开(公告)日：2007-05-17

    申请号：US11600481

    申请日：2006-11-15

    申请人： Min-Seok Oh ,  Jeong-Min Park ,  Sang-Gab Kim ,  Hong-Kee Chin ,  Chang-Oh Jeong ,  Hong-Sick Park ,  Shi-Yul Kim

    发明人： Min-Seok Oh ,  Jeong-Min Park ,  Sang-Gab Kim ,  Hong-Kee Chin ,  Chang-Oh Jeong ,  Hong-Sick Park ,  Shi-Yul Kim

    IPC分类号： H01L21/84

    CPC分类号： H01L21/32139 ,  H01L21/0273 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1288

    摘要： In one embodiment, a thin film transistor array display panel and method of manufacturing the same are provided. A method includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact layer on the gate line; forming a data layer on the ohmic contact layer; forming a photosensitive pattern on the data layer; etching the data layer to form a data line including a source electrode and a drain electrode that is opposite to the source electrode; reflowing the photosensitive pattern to cover side surfaces of the source electrode and the drain electrode; and etching the ohmic contact layer using the reflowed photosensitive pattern as a mask.

    摘要翻译： 在一个实施例中，提供了薄膜晶体管阵列显示面板及其制造方法。 一种方法包括在基板上形成栅极线; 在栅极线上形成栅极绝缘层，半导体层和欧姆接触层; 在欧姆接触层上形成数据层; 在数据层上形成感光图案; 蚀刻数据层以形成包括与源电极相对的源电极和漏电极的数据线; 回流感光图案以覆盖源电极和漏电极的侧表面; 并使用回流感光图案作为掩模蚀刻欧姆接触层。