公开(公告)号：US20140247288A1

公开(公告)日：2014-09-04

申请号：US13784729

申请日：2013-03-04

申请人： Yanli Zhang

发明人： Yanli Zhang

IPC分类号： G09G5/10

CPC分类号： H04N9/3194 ,  G03B21/2053 ,  G06F1/3218 ,  G06F1/325 ,  G06F1/3265 ,  G09G3/3406 ,  G09G3/3413 ,  G09G2320/0646 ,  G09G2360/16 ,  H04N5/58 ,  H04N9/3155 ,  H04N9/3182 ,  H04N21/4122 ,  H04N21/4318 ,  H04N21/44008 ,  Y02D10/153

摘要： Content adaptive power management technologies of projector systems are described. One method analyzes image data to be displayed by a projector system. A projector brightness of a light source of the projector system is adjusted based on the analyzed image data. The pixel values of the image data input into an imager of the projector system are adjusted based on the analyzed image data.

摘要翻译： 描述了投影机系统的内容自适应电源管理技术。 一种方法分析由投影仪系统显示的图像数据。 基于分析的图像数据来调整投影仪系统的光源的投影仪亮度。 基于分析的图像数据来调整输入到投影仪系统的成像器中的图像数据的像素值。

公开(公告)号：US08809953B2

公开(公告)日：2014-08-19

申请号：US13426547

申请日：2012-03-21

申请人： David M. Fried ,  Jeffrey B. Johnson ,  Kevin McStay ,  Paul Parries ,  Chengwen Pei ,  Gan Wang ,  Geng Wang ,  Yanli Zhang

发明人： David M. Fried ,  Jeffrey B. Johnson ,  Kevin McStay ,  Paul Parries ,  Chengwen Pei ,  Gan Wang ,  Geng Wang ,  Yanli Zhang

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  H01L21/26586 ,  H01L27/1203 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7833

摘要： A field effect transistor (FET) structure on a semiconductor substrate which includes a gate structure having a spacer on a semiconductor substrate; an extension implant underneath the gate structure; a recessed source and a recessed drain filled with a doped epitaxial material; halo implanted regions adjacent a bottom of the recessed source and drain and being underneath the gate stack. In an exemplary embodiment, there is implanted junction butting underneath the bottom of each of the recessed source and drain, the junction butting being separate and distinct from the halo implanted regions. In another exemplary embodiment, the doped epitaxial material is graded from a lower dopant concentration at a side of the recessed source and drain to a higher dopant concentration at a center of the recessed source and drain. In a further exemplary embodiment, the semiconductor substrate is a semiconductor on insulator substrate.

摘要翻译： 一种半导体衬底上的场效应晶体管（FET）结构，其包括在半导体衬底上具有间隔物的栅极结构; 栅极结构下面的延伸植入物; 凹陷的源极和填充有掺杂的外延材料的凹陷的漏极; 邻近凹陷源的底部的卤素注入区域和漏极并位于栅极叠层下方。 在示例性实施例中，在凹陷源和漏极中的每一个的底部下方注入结合对接，该接合部分与光晕注入区域分开且不同。 在另一个示例性实施例中，掺杂的外延材料从凹陷源的一侧的较低掺杂剂浓度和漏极分级到凹陷源极和漏极的中心处的较高掺杂剂浓度。 在另一示例性实施例中，半导体衬底是绝缘体上半导体衬底。

公开(公告)号：US08578192B2

公开(公告)日：2013-11-05

申请号：US12165249

申请日：2008-06-30

申请人： Maximino Vasquez ,  Akihiro Takagi ,  Yanli Zhang ,  Achintya K. Bhowmik

发明人： Maximino Vasquez ,  Akihiro Takagi ,  Yanli Zhang ,  Achintya K. Bhowmik

IPC分类号： G06F1/32 ,  G09G5/00

CPC分类号： G09G3/36 ,  G09G3/3611 ,  G09G2320/0261 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2340/0435

摘要： Some embodiments describe techniques that relate to power efficient, high frequency displays with motion blur mitigation. In one embodiment, the refresh rate of a display device may be dynamically modified, e.g., to reduce power consumption and/or reduce motion blur. Other embodiments are also described.

公开(公告)号：US20130134491A1

公开(公告)日：2013-05-30

申请号：US13307874

申请日：2011-11-30

申请人： Brian W. Messenger ,  Paul C. Parries ,  Chengwen Pei ,  Geng Wang ,  Yanli Zhang

发明人： Brian W. Messenger ,  Paul C. Parries ,  Chengwen Pei ,  Geng Wang ,  Yanli Zhang

IPC分类号： H01L27/108 ,  H01L21/02

CPC分类号： H01L27/10829 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/481 ,  H01L27/1087 ,  H01L27/1203 ,  H01L29/66181 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a trench structure that includes forming a metal containing layer on at least the sidewalls of a trench, and forming an undoped semiconductor fill material within the trench. The undoped semiconductor fill material and the metal containing layer are recessed to a first depth within the trench with a first etch. The undoped semiconductor fill material is then recessed to a second depth within the trench that is greater than a first depth with a second etch. The second etch exposes at least a sidewall portion of the metal containing layer. The trench is filled with a doped semiconductor containing material fill, wherein the doped semiconductor material fill is in direct contact with the at least the sidewall portion of the metal containing layer.

摘要翻译： 一种形成沟槽结构的方法，其包括在至少沟槽的侧壁上形成含金属层，以及在所述沟槽内形成未掺杂的半导体填充材料。 未掺杂的半导体填充材料和含金属层通过第一蚀刻凹陷到沟槽内的第一深度。 然后将未掺杂的半导体填充材料凹入到沟槽内的第二深度，其大于具有第二蚀刻的第一深度。 第二蚀刻暴露了含金属层的至少一个侧壁部分。 沟槽填充有掺杂的半导体含有材料填充物，其中掺杂半导体材料填充物与含金属层的至少侧壁部分直接接触。

公开(公告)号：US08358260B2

公开(公告)日：2013-01-22

申请号：US12384500

申请日：2009-04-06

申请人： Akihiro Takagi ,  Cheng-Shih Chin ,  Yanli Zhang ,  Maximino Vasquez

发明人： Akihiro Takagi ,  Cheng-Shih Chin ,  Yanli Zhang ,  Maximino Vasquez

IPC分类号： G09G3/36

CPC分类号： G09G3/36 ,  G09G3/3611 ,  G09G3/3614 ,  G09G2310/061 ,  G09G2320/103 ,  G09G2340/0435

摘要： A display device may include a flat panel display, and a controller coupled to the flat panel display. The controller may be configured to determine an operating mode for the flat panel display among a plurality of operating modes including at least a first operating mode and a second operating mode. In the first operating mode, the controller may set the flat panel display to utilize a first frame rate and a first inversion mode to save power. In the second operating mode, the controller may set the flat panel display to utilize a second frame rate, a second inversion mode, and a black frame insertion to improve image quality. The second frame rate may be faster than the first frame rate. The second inversion mode and black frame insertion may be mutually configured to maintain a DC balanced operation of the flat panel display.

摘要翻译： 显示装置可以包括平板显示器和耦合到平板显示器的控制器。 控制器可以被配置为在包括至少第一操作模式和第二操作模式的多个操作模式中确定平板显示器的操作模式。 在第一操作模式中，控制器可以设置平板显示器以利用第一帧速率和第一反转模式来节省功率。 在第二操作模式中，控制器可以将平板显示器设置为利用第二帧速率，第二反转模式和黑帧插入以提高图像质量。 第二帧速率可以比第一帧速率更快。 第二反转模式和黑框插入可以相互配置以保持平板显示器的直流平衡操作。

公开(公告)号：US20090327777A1

公开(公告)日：2009-12-31

申请号：US12165249

申请日：2008-06-30

申请人： Maximino Vasquez ,  Akihiro Takagi ,  Yanli Zhang ,  Achintya K. Bhowmik

发明人： Maximino Vasquez ,  Akihiro Takagi ,  Yanli Zhang ,  Achintya K. Bhowmik

IPC分类号： G06F1/32 ,  H04N5/14

CPC分类号： G09G3/36 ,  G09G3/3611 ,  G09G2320/0261 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2340/0435

摘要： Some embodiments describe techniques that relate to power efficient, high frequency displays with motion blur mitigation. In one embodiment, the refresh rate of a display device may be dynamically modified, e.g., to reduce power consumption and/or reduce motion blur. Other embodiments are also described.

摘要翻译： 一些实施例描述了与具有运动模糊减轻的功率高效，高频率显示相关的技术。 在一个实施例中，可以动态地修改显示设备的刷新率，例如以减少功耗和/或减少运动模糊。 还描述了其它实施例。

公开(公告)号：US09484269B2

公开(公告)日：2016-11-01

申请号：US12822492

申请日：2010-06-24

申请人： Joseph Ervin ,  Jeffrey B. Johnson ,  Kevin McStay ,  Paul C. Parries ,  Chengwen Pei ,  Geng Wang ,  Yanli Zhang

发明人： Joseph Ervin ,  Jeffrey B. Johnson ,  Kevin McStay ,  Paul C. Parries ,  Chengwen Pei ,  Geng Wang ,  Yanli Zhang

IPC分类号： H01L27/12 ,  H01L21/8242 ,  H01L21/84 ,  H01L21/762 ,  H01L27/108

CPC分类号： H01L21/84 ,  H01L21/76237 ,  H01L27/10847 ,  H01L27/1203

摘要： Semiconductor structures and methods to control bottom corner threshold in a silicon-on-insulator (SOI) device. A method includes doping a corner region of a semiconductor-on-insulator (SOI) island. The doping includes tailoring a localized doping of the corner region to reduce capacitive coupling of the SOI island with an adjacent structure.

摘要翻译： 半导体结构和方法来控制绝缘体上硅（SOI）器件中的底角阈值。 一种方法包括掺杂绝缘体上半导体（SOI）岛的角区域。 掺杂包括定制角区域的局部掺杂以减少SOI岛与相邻结构的电容耦合。

公开(公告)号：US08835994B2

公开(公告)日：2014-09-16

申请号：US12791372

申请日：2010-06-01

申请人： Joseph Ervin ,  Jeffrey B. Johnson ,  Paul C. Parries ,  Chengwen Pei ,  Geng Wang ,  Yanli Zhang

发明人： Joseph Ervin ,  Jeffrey B. Johnson ,  Paul C. Parries ,  Chengwen Pei ,  Geng Wang ,  Yanli Zhang

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L29/786 ,  H01L27/12 ,  H01L21/84 ,  H01L29/66 ,  H01L27/108 ,  H01L21/762

CPC分类号： H01L21/76283 ,  H01L21/84 ,  H01L27/1087 ,  H01L27/10873 ,  H01L27/1203 ,  H01L29/66181 ,  H01L29/78603 ,  H01L29/78609 ,  H01L29/78696 ,  H01L29/945

摘要： A structural alternative to retro doping to reduce transistor leakage is provided by providing a liner in a trench, undercutting a conduction channel region in an active semiconductor layer, etching a side, corner and/or bottom of the conduction channel where the undercut exposes semiconductor material in the active layer and replacing the removed portion of the conduction channel with insulator. This shaping of the conduction channel increases the distance to adjacent circuit elements which, if charged, could otherwise induce a voltage and cause a change in back-channel threshold in regions of the conduction channel and narrows and reduces cross-sectional area of the channel where the conduction in the channel is not well-controlled; both of which effects significantly reduce leakage of the transistor.

公开(公告)号：US20130328950A1

公开(公告)日：2013-12-12

申请号：US13965095

申请日：2013-08-12

申请人： Maximino Vasquez ,  Achintya Bhowmik ,  Yanli Zhang ,  Akihiro Takagi

发明人： Maximino Vasquez ,  Achintya Bhowmik ,  Yanli Zhang ,  Akihiro Takagi

IPC分类号： G09G5/04

CPC分类号： G09G5/04 ,  G09G3/3413 ,  G09G3/3611 ,  G09G2310/0235 ,  G09G2330/021 ,  G09G2360/16

摘要： A system, apparatus and method to reduce power consumption for displays is described. The method may include receiving image data comprising a plurality of color components, generating a histogram for each of the plurality of color components, and adjusting each of a plurality of light sources based on the histograms. The plurality of light sources may correspond to the plurality of color components. Other embodiments are described and claimed.

公开(公告)号：US20130113694A1

公开(公告)日：2013-05-09

申请号：US13729606

申请日：2012-12-28

申请人： Akihiro Takagi ,  Cheng-Shih Chin ,  Yanli Zhang ,  Maximino Vasquez

发明人： Akihiro Takagi ,  Cheng-Shih Chin ,  Yanli Zhang ,  Maximino Vasquez

IPC分类号： G09G3/36

CPC分类号： G09G3/36 ,  G09G3/3611 ,  G09G3/3614 ,  G09G2310/061 ,  G09G2320/103 ,  G09G2340/0435

摘要： In some embodiments, a display device may include a flat panel display a controller coupled to the flat panel display. The controller may be configured to determine an operating mode for the flat panel display among a plurality of operating modes including at least a first operating mode and a second operating mode. In the first operating mode, the controller may set the flat panel display to utilize a first frame rate and a first inversion mode to save power. In the second operating mode, the controller may set the flat panel display to utilize a second frame rate, a second inversion mode, and black frame insertion to improve image quality. The second frame rate may be faster than the first frame rate. The second inversion mode and black frame insertion may be mutually configured to maintain a DC balanced operation of the flat panel display. Other embodiments are disclosed and claimed.

摘要翻译： 在一些实施例中，显示设备可以包括平板显示器，耦合到平板显示器的控制器。 控制器可以被配置为在包括至少第一操作模式和第二操作模式的多个操作模式中确定平板显示器的操作模式。 在第一操作模式中，控制器可以设置平板显示器以利用第一帧速率和第一反转模式来节省功率。 在第二操作模式中，控制器可以将平板显示器设置为利用第二帧速率，第二反转模式和黑框插入来提高图像质量。 第二帧速率可以比第一帧速率更快。 第二反转模式和黑框插入可以相互配置以保持平板显示器的直流平衡操作。 公开和要求保护其他实施例。