公开(公告)号：US06924513B2

公开(公告)日：2005-08-02

申请号：US10352126

申请日：2003-01-28

申请人： Yasuhiko Akaike ,  Shoichi Washizuka ,  Yoshiyuki Kinugawa

发明人： Yasuhiko Akaike ,  Shoichi Washizuka ,  Yoshiyuki Kinugawa

IPC分类号： H01L21/301 ,  H01L21/306 ,  H01L33/16 ,  H01L33/22 ,  H01L33/30 ,  H01L29/22

CPC分类号： H01L33/20

摘要： A light emitting element includes: a light emitting layer; a rectangular first principal surface being parallel to the light emitting layer; a rectangular second principal surface opposing to the first principal surface so that the light emitting layer is sandwiched between the first and second principal surfaces; and first through fourth side surfaces of the light emitting element provided with a rough surface, the first through fourth side surfaces connecting between the first principal surface and the second principal surface, respectively so as to define a solid shape.

摘要翻译： 发光元件包括：发光层; 矩形的第一主表面平行于发光层; 与第一主表面相对的矩形第二主表面，使得发光层夹在第一和第二主表面之间; 以及设置有粗糙表面的发光元件的第一至第四侧表面，分别连接在第一主表面和第二主表面之间的第一至第四侧表面以限定实心形状。

公开(公告)号：US07037738B2

公开(公告)日：2006-05-02

申请号：US10346108

申请日：2003-01-17

申请人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

发明人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

IPC分类号： H01L21/00

CPC分类号： H01L33/22

摘要： There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

摘要翻译： 公开了一种半导体发光元件，包括具有第一表面和第二表面的基板，形成在基板的第一表面上并包含发光层的半导体层叠体和具有光提取表面的电流扩散层 。 发光元件设置有由精细凹入/突出表面构成的光提取表面，其90％构造成使得其具有锥形构造的突出部分的高度为100nm以上 ，突出部的基部的宽度在10〜500nm的范围内。

公开(公告)号：US06373069B1

公开(公告)日：2002-04-16

申请号：US09395182

申请日：1999-09-14

申请人： Yasuhiko Akaike ,  Shoichi Washizuka

发明人： Yasuhiko Akaike ,  Shoichi Washizuka

IPC分类号： G01N2164

CPC分类号： G01N21/6489

摘要： An evaluating method capable of quickly measuring the essential lifetime in an epitaxial wafer for a light emitting device independently from the excited carrier density without breaking the epitaxial wafer is configured to obtain the non-radiative lifetime from the changing rate of intensity of luminescence light generated by irradiating exited light onto the epitaxial wafer at the time when the changes with time becomes below a given value, and to obtain the non-radiative lifetime independent from the excited carrier density. An epitaxial wafer for a light emitting device with a higher emission efficiency than conventional ones has a non-radiative lifetime not shorter than 20 nanoseconds obtained by the evaluating method, and the diffusion amount of zinc into its active layer does not exceed 1E13 atoms per cm2.

摘要翻译： 能够在不破坏外延晶片的情况下快速测量用于发光器件的外延晶片中基本寿命的评估方法，而不会破坏外延晶片，从而根据由发光器件产生的发光强度的变化率获得非辐射寿命 在随时间的变化变得低于给定值时将离子束照射到外延晶片上，并且获得与激发的载流子密度无关的非辐射寿命。 用于发光器件的发光器件的外延晶片具有比常规发光器件更高的发光器件，具有不低于通过评估方法获得的20纳秒的非辐射寿命，并且锌在其有源层中的扩散量不超过每1cm 2原子 。

公开(公告)号：US20050145864A1

公开(公告)日：2005-07-07

申请号：US11054409

申请日：2005-02-10

申请人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

发明人： Hitoshi Sugiyama ,  Kenichi Ohashi ,  Atsuko Yamashita ,  Shoichi Washizuka ,  Yasuhiko Akaike ,  Shunji Yoshitake ,  Koji Asakawa ,  Katsumi Egashira ,  Akira Fujimoto

IPC分类号： H01L21/302 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/32 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/22

摘要： There is disclosed a semiconductor light-emitting element comprising a substrate having a first surface and a second surface, a semiconductor laminate formed on the first surface of the substrate and containing a light-emitting layer and a current diffusion layer having a light-extracting surface. The light-emitting element is provided with a light-extracting surface which is constituted by a finely recessed/projected surface, 90% of which is constructed such that the height of the projected portion thereof having a cone-like configuration is 100 nm or more, and the width of the base of the projected portion is within the range of 10-500 nm.

摘要翻译： 公开了一种半导体发光元件，包括具有第一表面和第二表面的基板，形成在基板的第一表面上并包含发光层的半导体层叠体和具有光提取表面的电流扩散层 。 发光元件设置有由精细凹入/突出表面构成的光提取表面，其90％构造成使得其具有锥形构造的突出部分的高度为100nm以上 ，突出部的基部的宽度在10〜500nm的范围内。

公开(公告)号：US5179333A

公开(公告)日：1993-01-12

申请号：US614153

申请日：1990-11-16

申请人： Shoichi Washizuka ,  Takao Ohta

发明人： Shoichi Washizuka ,  Takao Ohta

IPC分类号： H01L21/66 ,  G01R31/28 ,  H01L21/677

CPC分类号： G01R31/2831

摘要： A semiconductor wafer evaluation apparatus, wherein a conductivity detector and a carrier mobility detector are independently arranged so that detections can be made under optimum conditions, respectively. A wafer carrying unit is arranged so as to carry or convey a semiconductor wafer on a carrying path between the two detectors. These components are controlled by a controller. A carrier concentration is calculated from the conductivity and the carrier mobility detected by both detectors. When a partition wall for preventing interference of an electromagnetic wave is provided between the conductivity detector and the carrier mobility detector, interference between the two detectors is further reduced.