摘要:
A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an &agr;-Fe2O3 film. A surface roughness of the multilayer film is about 0.5 nm or less.
摘要:
An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8
摘要:
An exchange coupling film of the present invention includes a substrate and a multilayer film. The multilayer film includes: a ferromagnetic layer and a magnetization rotation suppressing layer provided adjacent to the ferromagnetic layer for suppressing a magnetization rotation of the ferromagnetic layer; and the magnetization rotation suppressing layer includes an Fe—M—O layer (where M=Al, Ti, Co, Mn, Cr, Ni or V).
摘要:
A magnetic recording medium includes a magnetic film for signal recording and a film containing M2Oy as a main component that is magnetically exchange-coupled to the magnetic film to increase the effective V and Ku of the magnetic film and to suppress thermal fluctuation. Herein, M is at least one element selected from Fe, Co, Ni, alkaline earth elements, Y, lanthanoids and Bi and includes at least one selected from Fe, Co and Ni as an essential element, and y is a value satisfying 2.8
摘要翻译:磁记录介质包括用于信号记录的磁性膜和含有M 2 O y作为主要成分的膜,该膜与磁性膜磁交换耦合,以增加磁性膜的有效V和Ku并抑制热波动。 这里,M是选自Fe,Co,Ni,碱土金属元素,Y,镧系元素和Bi中的至少一种元素,并且包括选自Fe,Co和Ni中的至少一种作为必需元素,y是满足2.8 < Y <3.2。
摘要:
An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including an (AB)2Ox layer, wherein: O denotes an oxygen atom; 2.8
摘要:
A magnetoresistance effect element includes a free layer, in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer, and a first pinned layer provided on a side opposite to the free layer of the first non-magnetic layer, in which a magnetization direction of the first pinned layer is not easily rotated in response to the external magnetic field. At least one of the first pinned layer and the free layer includes a first metal magnetic film contacting the first non-magnetic layer, and a first oxide magnetic film.
摘要:
A magnetoresistance effect device includes: a free layer whose magnetization direction is easily rotated by an external magnetic field; a non-magnetization layer; and a pinned layer whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer which is opposite to a face on which the free layer is formed, wherein the pinned layer includes: a first non-magnetic film for exchange-coupling; and first and second magnetic films which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film, and the first non-magnetic film includes one of the oxides of Ru, Ir, Rh, and Re.
摘要:
In the present invention, a thin film whose main component is a metal having a specific resistance of 4 μΩ·cm to 200 μΩ·cm is used as a nonmagnetic layer of a so-called CPP-GMR element. Therefore, even when an area of the element becomes limited, the element is not increased excessively in resistance. Thus, even when a magnetic gap is narrow, a large output can be obtained.
摘要:
The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X3 is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05≦a≦60, 0≦b≦60, 0≦c≦30, 0≦d≦20, and a=b+c+d.
摘要翻译:本发明提供了一种磁阻(MR)元件,它具有优异的MR比和热稳定性,并且包括至少一个包括由M 100-a X表示的铁磁材料MX的磁性层, / SUB>。 这里,M是选自Fe,Co和Ni中的至少一种,X由X 1表示,X 2, (X 1以上)选自Cu,Ru,Rh,Pd,Ag,Os,Ir中的至少一种, Pt和Au,X 2是选自Al,Sc,Ti,V,Cr,Mn,Ga,Ge,Y,Zr,Nb,Mo,Hf,Ta,W,Re中的至少一种 ,Zn和镧系元素,X 3是选自Si,B,C,N,O,P和S中的至少一种),a,b,c和d满足0.05 < a <= 60,0 <= b <= 60,0 <= c <= 30,0 <= d <= 20,a = b + c + d。
摘要:
A magnetic memory device that includes a magnetoresistive element, a conductive wire for generating magnetic flux that changes a resistance value of the magnetoresistive element, and at least one ferromagnetic member through which the magnetic flux passes. The ferromagnetic member forms a magnetic gap at a position where the magnetic flux passes through the magnetoresistive element. A length of the magnetoresistive element that is measured in a direction parallel to the magnetic gap is less than or equal to twice the length of the magnetic gap. A length of a path traced by the magnetic flux in the ferromagnetic member is less than or equal to 1.0 μm. The length of the path is also greater than or equal to five times the thickness of the ferromagnetic member and/or is greater than or equal to a length of the ferromagnetic member in the direction of the drawing of the conductive wire divided by five.