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1.发明授权Composition for forming silicon-cobalt film, silicon-cobalt film and method for forming same 有权用于形成硅 - 钴膜的组合物，硅 - 钴膜及其形成方法公开(公告)号：US07718228B2
公开(公告)日：2010-05-18
申请号：US10575478
申请日：2004-10-06
申请人： Yasuo Matsuki , Daohai Wang , Tatsuya Sakai , Haruo Iwasawa
发明人： Yasuo Matsuki , Daohai Wang , Tatsuya Sakai , Haruo Iwasawa
IPC分类号： B05D3/02
CPC分类号： H01L21/28518 , C07F17/02 , C23C18/1204 , C23C18/14
摘要： There are provided a composition and method for forming a silicon-cobalt film at low production cost without expensive vacuum equipment and high-frequency generator. The composition is a silicon-cobalt film forming composition comprising a silicon compound and a cobalt compound. A silicon-cobalt film is formed by applying this composition on a substrate and subjecting the resulting substrate to a heat treatment and/or a light treatment.
摘要翻译： 提供了一种低成本的用于形成硅 - 钴膜的组合物和方法，而不需要昂贵的真空设备和高频发生器。 该组合物是包含硅化合物和钴化合物的硅 - 钴膜形成组合物。 通过将该组合物涂布在基板上并使所得到的基板进行热处理和/或光处理而形成硅 - 钴膜。
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2.发明申请Composition for forming silicon-cobalt film, silicon-cobalt film and method forming same 有权用于形成硅 - 钴膜的组合物，硅 - 钴膜及其形成方法公开(公告)号：US20070077742A1
公开(公告)日：2007-04-05
申请号：US10575478
申请日：2004-10-06
申请人： Yasuo Matsuki , Daohai Wang , Tatsuya Sakai , Haruo Iwasawa
发明人： Yasuo Matsuki , Daohai Wang , Tatsuya Sakai , Haruo Iwasawa
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/3205
CPC分类号： H01L21/28518 , C07F17/02 , C23C18/1204 , C23C18/14
摘要： There are provided a composition and method for forming a silicon-cobalt film at low production cost without expensive vacuum equipment and high-frequency generator. The composition is a silicon-cobalt film forming composition comprising a silicon compound and a cobalt compound. A silicon-cobalt film is formed by applying this composition on a substrate and subjecting the resulting substrate to a heat treatment and/or a light treatment.
摘要翻译： 提供了一种低成本的用于形成硅 - 钴膜的组合物和方法，而不需要昂贵的真空设备和高频发生器。 该组合物是包含硅化合物和钴化合物的硅 - 钴膜形成组合物。 通过将该组合物涂布在基板上并使所得到的基板进行热处理和/或光处理而形成硅 - 钴膜。
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公开(公告)号：US20090215920A1
公开(公告)日：2009-08-27
申请号：US12398451
申请日：2009-03-05
申请人： Haruo Iwasawa , Daohai Wang , Yasuo Matsuki , Hitoshi Kato
发明人： Haruo Iwasawa , Daohai Wang , Yasuo Matsuki , Hitoshi Kato
CPC分类号： C09D183/16 , C01B33/08 , C09D4/00 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , C08G77/00
摘要： There are provided a silane polymer having a higher molecular weight from the viewpoints of wettability when applied to a substrate, a boiling point and safety, a composition which can form a high-quality silicon film easily, a silicon film forming composition which comprises a silane polymer obtained by irradiating a photopolymerizable silane compound with light of specific wavelength range to photopolymerize it, and a method for forming a silicon film which comprises applying the composition to a substrate and subjecting the coating film to a heat treatment and/or a light treatment.
摘要翻译： 从涂布在基材上的润湿性，沸点和安全性的观点出发，提供了具有较高分子量的硅烷聚合物，可以容易地形成高质量硅膜的组合物，包含硅烷 通过用特定波长范围的光照射光聚合性硅烷化合物而获得的聚合物进行光聚合;以及形成硅膜的方法，其包括将该组合物涂布在基材上，对该涂膜进行热处理和/或光处理。
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公开(公告)号：US20100029057A1
公开(公告)日：2010-02-04
申请号：US12442405
申请日：2007-09-21
申请人： Haruo Iwasawa , Tatsuya Sakai , Yasuo Matsuki , Kentaro Tamaki
发明人： Haruo Iwasawa , Tatsuya Sakai , Yasuo Matsuki , Kentaro Tamaki
IPC分类号： H01L21/762 , H01L21/3105 , C01B33/00
CPC分类号： H01L21/3124 , C08G77/06 , C08G77/12 , C08G77/16 , C09D183/04 , H01L21/02164 , H01L21/02216 , H01L21/02282 , H01L21/02348 , H01L21/316 , H01L21/76224
摘要： A silicone resin which is represented by the following rational formula (1) and solid at 120° C.: (H2SiO)n(HSiO1.5)m(SiO2)k (1) wherein n, m and k are each a number, with the proviso that, when n+m+k=1, n is not less than 0.5, m is more than 0 and not more than 0.95 and k is 0 to 0.2.The silicone resin of the present invention can be advantageously used in a composition for forming a trench isolation having a high aspect ratio.
摘要翻译： 由以下合理式（1）表示的有机硅树脂和120℃下的固体：（H2SiO）n（HSiO1.5）m（SiO2）k（1）其中n，m和k各自为数， 条件是当n + m + k = 1时，n不小于0.5，m大于0且不大于0.95，k为0至0.2。 本发明的有机硅树脂可以有利地用于形成具有高纵横比的沟槽隔离的组合物中。
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5.发明申请公开(公告)号：US20070190265A1
公开(公告)日：2007-08-16
申请号：US11787445
申请日：2007-04-16
IPC分类号： C08J3/28
CPC分类号： C08G77/60 , C01B33/04 , C09D183/16 , H01L21/02422 , H01L21/02532 , H01L21/02628
摘要： It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.
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6.发明授权High order silane composition, and method of forming silicon film using the composition 有权高级硅烷组合物，以及使用该组合物形成硅膜的方法公开(公告)号：US07223802B2
公开(公告)日：2007-05-29
申请号：US10420521
申请日：2003-04-22
CPC分类号： C08G77/60 , C01B33/04 , C09D183/16 , H01L21/02422 , H01L21/02532 , H01L21/02628
摘要： It is an object of the present invention to provide a high order silane composition that contains a polysilane having a higher molecular weight than conventionally, this being from the viewpoints of wettability when applying onto a substrate, boiling point and safety, and hence in particular enables a high-quality silicon film to be formed easily, and also a method of forming an excellent silicon film using the composition. The present invention attains this object by providing a high order silane composition containing a polysilane obtained through photopolymerization by irradiating a solution of a photopolymerizable silane or a photopolymerizable like-liquid silane with ultraviolet light. Moreover, the present invention provides a method of forming a silicon film comprising the step of applying such a high order silane composition onto a substrate.
摘要翻译： 本发明的目的是提供一种高分子量硅烷组合物，其含有比常规高的分子量的聚硅烷，这是从涂布在基材上的润湿性，沸点和安全性的观点出发的，因此特别地使能 容易形成的高质量硅膜，以及使用该组合物形成优异的硅膜的方法。 本发明通过提供通过光可聚合硅烷或可光聚合的类似液体硅烷的溶液用紫外光照射而通过光聚合获得的含有聚硅烷的高级硅烷组合物达到该目的。 此外，本发明提供一种形成硅膜的方法，其包括将这种高级硅烷组合物施加到基底上的步骤。
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7.发明申请公开(公告)号：US20050145163A1
公开(公告)日：2005-07-07
申请号：US10515728
申请日：2003-08-15
申请人： Yasuo Matsuki , Haruo Iwasawa , Hitoshi Kato
发明人： Yasuo Matsuki , Haruo Iwasawa , Hitoshi Kato
IPC分类号： C23C24/10 , C23C26/02 , H01L21/208 , C30B7/00 , H01L21/44
CPC分类号： C23C24/10 , C23C26/02 , C30B7/005 , H01L21/02422 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/02667 , H01L21/02686
摘要： There are provided a silicon-film-forming composition containing silicon particles and a dispersion medium and a method for forming a silicon film by forming a coating film of the silicon-film-forming composition on a substrate and subjecting the coating film to instantaneous fusion, a heat treatment or a light treatment. According to the composition and the method, a polysilicon film with a desired thickness which may be used as a silicon film for a solar battery can be formed efficiently and easily.
摘要翻译： 提供一种含有硅颗粒和分散介质的硅膜形成组合物，以及通过在基片上形成硅膜形成组合物的涂膜并对涂膜进行即时熔合而形成硅膜的方法， 热处理或光处理。 根据组成和方法，可以有效且容易地形成可用作太阳能电池的硅膜的具有期望厚度的多晶硅膜。
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8.发明授权公开(公告)号：US07473443B2
公开(公告)日：2009-01-06
申请号：US10515728
申请日：2003-08-15
申请人： Yasuo Matsuki , Haruo Iwasawa , Hitoshi Kato
发明人： Yasuo Matsuki , Haruo Iwasawa , Hitoshi Kato
CPC分类号： C23C24/10 , C23C26/02 , C30B7/005 , H01L21/02422 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/02667 , H01L21/02686
摘要： There are provided a silicon-film-forming composition containing silicon particles and a dispersion medium and a method for forming a silicon film by forming a coating film of the silicon-film-forming composition on a substrate and subjecting the coating film to instantaneous fusion, a heat treatment or a light treatment. According to the composition and the method, a polysilicon film with a desired thickness which may be used as a silicon film for a solar battery can be formed efficiently and easily.
摘要翻译： 提供一种含有硅颗粒和分散介质的硅膜形成组合物，以及通过在基片上形成硅膜形成组合物的涂膜并对涂膜进行即时熔合而形成硅膜的方法， 热处理或光处理。 根据组成和方法，可以有效且容易地形成可用作太阳能电池的硅膜的具有期望厚度的多晶硅膜。
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公开(公告)号：US07002033B1
公开(公告)日：2006-02-21
申请号：US11187982
申请日：2005-07-25
申请人： Tatsuya Sakai , Sachiko Hashimoto , Yasuo Matsuki
发明人： Tatsuya Sakai , Sachiko Hashimoto , Yasuo Matsuki
CPC分类号： C23C16/18 , C07F15/0053
摘要： A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, and a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained.
摘要翻译： 一种化学气相沉积材料，其包含具有由下式表示的配位体的钌化合物：化学式id =“CHEM-US-00001”num =“000
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公开(公告)号：US20060024443A1
公开(公告)日：2006-02-02
申请号：US11187982
申请日：2005-07-25
申请人： Tatsuya Sakai , Sachiko Hashimoto , Yasuo Matsuki
发明人： Tatsuya Sakai , Sachiko Hashimoto , Yasuo Matsuki
CPC分类号： C23C16/18 , C07F15/0053
摘要： A chemical vapor deposition material comprising a ruthenium compound having a ligand represented by the following formula: wherein R1, R2 and R3 are each independently a hydrogen atom, fluorine atom, trifluoromethyl group or hydrocarbon group having 1 to 10 carbon atoms, and a method of forming a ruthenium film from the chemical vapor deposition material by chemical vapor deposition. A high-quality ruthenium film even when it is very thin can be obtained.
摘要翻译： 一种化学气相沉积材料，其包含具有由下式表示的配体的钌化合物：其中R 1，R 2和R 3各自为 独立地为氢原子，氟原子，三氟甲基或碳原子数为1〜10的烃基，以及通过化学气相沉积从化学气相沉积材料形成钌膜的方法。 即使非常薄也可以获得高质量的钌膜。
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